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21 条记录 (耗时 0.024 秒)

    Heater/lift assembly for high temperature processing chamber
    3.
    发明授权
    Heater/lift assembly for high temperature processing chamber 有权
    加热器/升降机组件用于高温处理室

    公开(公告)号：US06645303B2

    公开(公告)日：2003-11-11

    申请号：US09565914

    申请日：2000-05-05

    申请人： Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

    发明人： Jonathan Frankel ,  Hari Ponnekanti ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan

    IPC分类号： C23C1600

    CPC分类号： G07F17/3202 ,  G07C15/006 ,  G07F17/32

    摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

    摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

    Low profile thick film heaters in multi-slot bake chamber
    4.
    发明授权
    Low profile thick film heaters in multi-slot bake chamber 失效
    低槽厚膜加热器在多槽烘烤室

    公开(公告)号：US06506994B2

    公开(公告)日：2003-01-14

    申请号：US09882769

    申请日：2001-06-15

    申请人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    发明人： Yen-Kun Victor Wang ,  Mark Fodor ,  Chen-An Chen ,  Himanshu Pokharna ,  Son T. Nguyen ,  Kelly Fong ,  Inna Shmurun

    IPC分类号： F27B514

    CPC分类号： H01L21/67748 ,  C23C16/0209 ,  C23C16/54 ,  C30B25/10 ,  C30B31/14 ,  H01L21/68

    摘要： A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.

    摘要翻译： 用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。 加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。 厚膜加热器板比传统加热板更有效，响应时间更长。 围绕堆叠的加热器板的室是可压力密封的，并且不包括用于在压力下向其供应吹扫气体的吹扫气体入口。 通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。 堆叠中的槽可与门对准，用于装载和卸载晶片。 该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

    Lid assembly for high temperature processing chamber
    5.
    发明授权
    Lid assembly for high temperature processing chamber 失效
    用于高温处理室的盖组件

    公开(公告)号：US6019848A

    公开(公告)日：2000-02-01

    申请号：US749925

    申请日：1996-11-13

    申请人： Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

    发明人： Jonathan Frankel ,  Inna Shmurun ,  Visweswaren Sivaramakrishnan ,  Eugene Fukshansky

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/455 ,  H01L21/67011

    摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

    摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

    Method and apparatus for processing semiconductive wafers
    10.
    发明授权
    Method and apparatus for processing semiconductive wafers 有权
    用于处理半导体晶片的方法和设备

    公开(公告)号：US06300255B1

    公开(公告)日：2001-10-09

    申请号：US09257467

    申请日：1999-02-24

    申请人： Shankar Venkataranan ,  Scott Hendrickson ,  Inna Shmurun ,  Son T. Nguyen

    发明人： Shankar Venkataranan ,  Scott Hendrickson ,  Inna Shmurun ,  Son T. Nguyen

    IPC分类号： H01L2131

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  C23C16/45512

    摘要： There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO2) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.

    摘要翻译： 提供了一种用于通过化学气相沉积在大直径（例如，300mm）半导体晶片上形成薄膜绝缘层的氧化硅（SiO 2）的方法和装置，所述氧化硅（SiO 2）的绝缘层从边缘到边缘具有高度均匀性，并通过晶片中心的任何直径。 通过将第一反应性气体流和第二反应气体流分别靠近晶片的暴露表面引导以由具有绝缘层的气体涂覆而获得这些高度的均匀度，气体流 混合在一起反应以在晶片上沉积绝缘层; 形成第一和第二气流的漩涡状旋转混合物以将其气体充分混合在一起; 形成高度均匀的反应性气体混合物; 并迅速将反应性气体的混合物流过晶片表面上和表面。 该设备还提供双晶片处理室腔。