发明授权
- 专利标题： Lid assembly for high temperature processing chamber
- 专利标题（中）： 用于高温处理室的盖组件
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申请号： US749925申请日： 1996-11-13
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公开(公告)号： US6019848A公开(公告)日： 2000-02-01
- 发明人: Jonathan Frankel , Inna Shmurun , Visweswaren Sivaramakrishnan , Eugene Fukshansky
- 申请人： Jonathan Frankel , Inna Shmurun , Visweswaren Sivaramakrishnan , Eugene Fukshansky
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/455 ; C23C16/511 ; H01L21/00 ; H01L21/203 ; H01L21/205 ; H01L21/31 ; C23C16/00
摘要：
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
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