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公开(公告)号：US20130126589A1
公开(公告)日：2013-05-23
申请号：US13372258
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
CPC classification number: H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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2.发明授权公开(公告)号：US08518204B2
公开(公告)日：2013-08-27
申请号：US13436314
申请日：2012-03-30
Applicant: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
Inventor： Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
CPC classification number: H01L24/83 , H01L21/67144 , H01L24/75 , H01L24/95 , H01L33/0079 , H01L33/46 , H01L2224/7598 , H01L2224/83 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , Y10T156/1153 , H01L2924/00
Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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公开(公告)号：US20130127020A1
公开(公告)日：2013-05-23
申请号：US13372277
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
IPC: H01L29/06
CPC classification number: H01L24/83 , B32B37/025 , B32B37/06 , B32B2457/20 , H01L21/67144 , H01L21/6833 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15153 , Y10T156/1153 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , H01L2224/83 , H01L2924/00
Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。
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公开(公告)号：US20130126891A1
公开(公告)日：2013-05-23
申请号：US13372222
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
CPC classification number: H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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5.发明授权Micro device transfer head heater assembly and method of transferring a micro device 有权微型设备传送头加热器组件和传送微型设备的方法公开(公告)号：US08349116B1
公开(公告)日：2013-01-08
申请号：US13372422
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
CPC classification number: H01L29/167 , B32B38/18 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L24/97 , H01L25/0753 , H01L33/62 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2933/0066 , Y10T156/1153 , Y10T156/17 , Y10T156/1705 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , Y10T156/1911 , H01L2224/83 , H01L2924/00
Abstract: A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer is heated to a temperature below a liquidus temperature of the bonding layer, and a transfer head is heated to a temperature above the liquidus temperature of the bonding layer. Upon contacting the micro device with the transfer head, the heat from the transfer head transfers into the bonding layer to at least partially melt the bonding layer. A voltage applied to the transfer head creates a grip force which picks up the micro device from the carrier substrate.
Abstract translation: 公开了一种传送微型装置和微型装置阵列的方法。 承载连接到接合层的微型器件的载体衬底被加热到低于接合层的液相线温度的温度，并且转移头被加热到高于接合层的液相线温度的温度。 当微型装置与转印头接触时，来自转印头的热量转移到粘结层中以至少部分地熔化粘结层。 施加到转印头的电压产生从载体衬底拾取微器件的夹持力。
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Patent Agency Ranking
公开(公告)号：US08333860B1
公开(公告)日：2012-12-18
申请号：US13372310
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
CPC classification number: H01L24/83 , B32B37/025 , B32B37/06 , B32B2457/20 , H01L21/67144 , H01L21/6833 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15153 , Y10T156/1153 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , H01L2224/83 , H01L2924/00
Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。
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公开(公告)号：US08809875B2
公开(公告)日：2014-08-19
申请号：US13372222
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
CPC classification number: H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
Abstract: A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
Abstract translation: 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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8.发明授权Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer 有权用电绝缘层形成微型LED结构和微型LED结构阵列的方法公开(公告)号：US08573469B2
公开(公告)日：2013-11-05
申请号：US13436260
申请日：2012-03-30
Applicant: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
Inventor： Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
IPC: B23K31/00 , B23K101/40 , H01L33/46
CPC classification number: H01L33/08 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L27/156 , H01L33/0079 , H01L33/405 , H01L2224/7598 , H01L2224/83 , H01L2224/95145 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
Abstract translation: 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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公开(公告)号：US20130130416A1
公开(公告)日：2013-05-23
申请号：US13372292
申请日：2012-02-13
Applicant: Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
Inventor： Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law , Hsin-Hua Hu
IPC: H01L21/306
CPC classification number: H01L24/83 , B32B37/025 , B32B37/06 , B32B2457/20 , H01L21/67144 , H01L21/6833 , H01L24/75 , H01L24/95 , H01L24/97 , H01L2224/75725 , H01L2224/7598 , H01L2224/83005 , H01L2224/97 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/1421 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/15153 , Y10T156/1153 , Y10T156/1707 , Y10T156/1744 , Y10T156/1749 , Y10T156/1776 , H01L2224/83 , H01L2924/00
Abstract: A micro device transfer head and head array are disclosed. In an embodiment, the micro device transfer head includes a base substrate, a mesa structure with sidewalls, an electrode formed over the mesa structure, and a dielectric layer covering the electrode. A voltage can be applied to the micro device transfer head and head array to pick up a micro device from a carrier substrate and release the micro device onto a receiving substrate.
Abstract translation: 公开了一种微器件转印头和头阵列。 在一个实施例中，微器件转移头包括基底，具有侧壁的台面结构，形成在台面结构上的电极以及覆盖电极的电介质层。 可以将电压施加到微器件转移头和头阵列以从载体衬底拾取微器件并将微器件释放到接收衬底上。
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10.发明授权Micromachined ultrasonic transducer devices with metal-semiconductor contact for reduced capacitive cross-talk 有权具有金属 - 半导体接触的微机械超声换能器件用于降低电容串扰公开(公告)号：US09375850B2
公开(公告)日：2016-06-28
申请号：US13762037
申请日：2013-02-07
Applicant: Arman Hajati , Dimitre Latev , Deane Gardner , Hung-Fai Stephen Law
Inventor： Arman Hajati , Dimitre Latev , Deane Gardner , Hung-Fai Stephen Law
CPC classification number: B25J15/12 , B06B1/0292 , B06B1/0622 , B25J9/104 , B25J15/0009 , H01L27/20 , H01L41/098 , Y10S901/29
Abstract: Embodiments reduce capacitive cross-talk between micromachined ultrasonic transducer (MUT) arrays through grounding of the substrate over which the arrays are fabricated. In embodiments, a metal-semiconductor contact is formed to a semiconductor device layer of a substrate and coupled to a ground plane common to a first electrode of the transducer elements to suppress capacitive coupling of signal lines connected to a second electrode of the transducer elements.
Abstract translation: 实施例通过在其上制造阵列的衬底的接地来减少微机械超声换能器（MUT）阵列之间的电容串扰。 在实施例中，金属 - 半导体接触形成于衬底的半导体器件层并且耦合到与换能器元件的第一电极共同的接地平面，以抑制连接到换能器元件的第二电极的信号线的电容耦合。
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