公开(公告)号：US4777103A

公开(公告)日：1988-10-11

申请号：US923556

申请日：1986-10-27

申请人： Hiroshi No ,  Shin Araki ,  Hideki Kamaji ,  Kohei Kiyota

发明人： Hiroshi No ,  Shin Araki ,  Hideki Kamaji ,  Kohei Kiyota

IPC分类号： G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08221 ,  G03G5/08278

摘要： An electrophotographic multi-layered photosensitive member having a top layer of hydrogenated amorphous silicon carbide and the method for forming the top layer are provided. The hydrogenated amorphous silicon carbide has an atomic ratio of carbon to carbon plus silicon C/(Si+C) ranging from 0.17 to 0.47 and a ratio of the number of hydrogen atoms bonded to a silicon atom per silicon atom, to number of hydrogen atoms bonded to a carbon atom per carbon atom, {(Si--H)/Si}/{(C--H)/C}, ranging from 0.3 to 1.0. The top layer is formed on a photosensitive member of hydrogenated amorphous silicon by employing a glow discharge CVD method. The gaseous mixture composed of disilane (Si.sub.2 H.sub.6) and propane (C.sub.3 H.sub.8) mixed with a mol ratio expressed as C.sub.3 H.sub.8 /(Si.sub.2 H.sub.6 +C.sub.3 H.sub.8) ranging from 0.2 to 0.6 is used. Another gaseous mixture is also used with an improved result. The mixture comprises disilane (Si.sub.2 H.sub.6) gas, propane (C.sub.3 H.sub.8) gas, and hydrogen (H.sub.2) gas, the mixing mol ratio of the propane gas to the disilane gas expressed as C.sub.3 H.sub.8 /(Si.sub.2 H.sub.6 +C.sub.3 H.sub.8) ranging from 02 to 0.7, and the mixing mol ratio of the hydrogen gas to the remaining gas, H.sub.2 /(Si.sub.2 H.sub.6 +C.sub.3 H.sub.8), ranging from 1 to 10.

摘要翻译： 提供具有氢化非晶碳化硅顶层的电子照相多层感光构件和形成顶层的方法。 氢化非晶碳化硅具有碳/碳加硅C /（Si + C）的原子比范围为0.17至0.47，并且每个硅原子与硅原子键合的氢原子数与氢原子数之比 键合到每个碳原子的碳原子，{（Si-H）/ Si} / {（CH）/ C}，范围为0.3至1.0。 顶层通过使用辉光放电CVD法形成在氢化非晶硅的感光构件上。 使用与由C2H8 /（Si2H6 + C3H8）表示的摩尔比率混合的乙硅烷（Si 2 H 6）和丙烷（C 3 H 8）组成的气体混合物为0.2〜0.6。 还使用另一种气体混合物，并具有改进的结果。 该混合物包括乙硅烷（Si 2 H 6）气，丙烷（C​​ 3 H 8）气和氢气（H 2）气，丙烷气与乙硅烷气体的混合摩尔比表示为C 3 H 8 /（Si 2 H 6 + C 3 H 8），范围为01-0.7， 氢气与剩余气体的混合摩尔比H 2 /（Si 2 H 6 + C 3 H 8）为1〜10。