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公开(公告)号：US20130161793A1
公开(公告)日：2013-06-27
申请号：US13610946
申请日：2012-09-12
IPC分类号： H01L29/04 , H01L21/208
CPC分类号： C30B29/06 , C30B15/04 , C30B15/206 , C30B33/02
摘要： Silicon single crystal substrates having uniform resistance, few BMDs in a surface layer and a moderate number of BMDs in a center of thickness of the substrate are formed from Czochralski silicon single crystals. The substrates have a resistivity in the center of a first main surface not lower than 50 Ω·cm and a rate of change in resistivity in the first main surface not higher than 3%, an average density of bulk micro defects in a region between the first main surface and a plane at a depth of 50 μm of less than 1×108/cm3, and an average density of bulk micro defects in a region lying between a plane at a depth of 300 μm and a plane at a depth of 400 μm from the first main surface not lower than 1×108 /cm3 and not higher than 1×109 /cm3.
摘要翻译： 由Czochralski硅单晶形成具有均匀电阻的硅单晶衬底，表面层中的BMD少，衬底厚度中心的中等数量的BMD。 基板在第一主表面的中心具有不小于50Ω·cm的电阻率，并且第一主表面中的电阻率变化率不高于3％，在第一主表面之间的区域中的体积微缺陷的平均密度 第一主表面和50μm深度小于1×108 / cm3的平面，以及位于300μm深度的平面与深度为400的平面之间的区域中的体微小缺陷的平均密度 妈妈从第一主表面不低于1×108 / cm3，不高于1×109 / cm3。
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公开(公告)号：US5358909A
公开(公告)日：1994-10-25
申请号：US840896
申请日：1992-02-26
IPC分类号： H01J9/02 , H01L21/465
CPC分类号： H01J9/025
摘要： A field-emitter having stable electrical properties, a long service life and a very small electron emission voltage is provided. The cathode of the element has a strongly sharpened projection at the tip end, and a smooth connection between the projection and the body portion. In the method of manufacturing the elements, cathodes are produced with a high reproducibility by using a mold produced by forming concave portions in the silicon and oxidizing the layer thereon, whereby the spacing between the cathode and the gate electrode is determined by the thickness of the silicon oxide layer, and the position of the cathode is determined by the silicon oxide layer embedded in the silicon substrate, by using an etching stop method based on an electrochemical etching process.
摘要翻译： 提供具有稳定的电性能，使用寿命长和电子发射电压非常小的场致发射体。 元件的阴极在尖端处具有强烈锐化的突起，并且突起和主体部分之间的平滑连接。 在制造元件的方法中，通过使用通过在硅中形成凹部并在其上氧化层而产生的模具，以高重现性制造阴极，由此阴极和栅电极之间的间隔由 氧化硅层，并且通过使用基于电化学蚀刻工艺的蚀刻停止方法，通过嵌入在硅衬底中的氧化硅层来确定阴极的位置。
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公开(公告)号：US06548886B1
公开(公告)日：2003-04-15
申请号：US09508467
申请日：2000-03-10
申请人： Atsushi Ikari , Masami Hasebe , Katsuhiko Nakai , Hikaru Sakamoto , Wataru Ohashi , Taizo Hoshino , Toshio Iwasaki
发明人： Atsushi Ikari , Masami Hasebe , Katsuhiko Nakai , Hikaru Sakamoto , Wataru Ohashi , Taizo Hoshino , Toshio Iwasaki
IPC分类号： H01L29167
CPC分类号： C30B29/06 , C30B15/203 , C30B15/206 , H01L21/3225
摘要： A silicon semiconductor substrate is obtained by deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method from a molten silicon containing not less than 1×1016 atoms/cm3 and not more than 1.5×1019 atoms/cm3 of nitrogen and heat-treating the silicon semiconductor substrate at a temperature of not less than 1000° C. and not more than 1300° C. for not less than one hour and is characterized by the fact that the density of crystal defects measuring not less than 0.1 &mgr;m as reduced to diameter is not more than 104 pieces/cm3 at least in the region reaching a depth of 1 &mgr;m from the surface of the substrate and the nitrogen content at the center of thickness of the silicon semiconductor substrate is not less than 1×1013 atoms/cm3 and not more than 1×1016 atoms/cm3.
摘要翻译： 通过从由Czochralski法生长的硅单晶从含有不小于1×10 16原子/ cm 3且不大于1.5×10 19原子/ cm 3的氮的熔融硅衍生硅半导体衬底而获得硅半导体衬底，并热处理 硅半导体基板在不低于1000℃且不超过1300℃的温度下不低于1小时，其特征在于，测量不小于0.1μm的直径的晶体缺陷的密度减小到直径 至少在从衬底的表面到达1um深度的区域中，不超过104个/ cm 3，并且硅半导体衬底的厚度中心处的氮含量不小于1×10 13原子/ cm 3，而不是更多 比1×1016原子/ cm3。
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公开(公告)号：US5665483A
公开(公告)日：1997-09-09
申请号：US649048
申请日：1996-05-16
申请人： Ken Saito , Naoyoshi Hinotsu , Hikaru Sakamoto , Koichi Hoshino
发明人： Ken Saito , Naoyoshi Hinotsu , Hikaru Sakamoto , Koichi Hoshino
CPC分类号： H01M2/06 , H01M2/0426 , H01M2/1229 , H01M10/24 , Y02E60/124 , Y10T29/4911
摘要： A sealed storage battery has a sealing assembly including a hollow rivet mounted to a cover plate via a gasket and a lead piece connecting a positive collector to the hollow rivet. Mounting the hollow rivet to the cover plate is achieved by pressurizing a distal end portion of a hollow shaft of the hollow rivet with a punch having a conical tip end portion so as to caulk the distal end portion of the hollow rivet by enlarging the distal end portion diametrically outward. Tightness between the opposing surfaces of the members among the cover plate, hollow rivet, gasket and lead piece can be enhanced, providing excellent liquid leakage resistance in the battery. A valve body of a safety valve is housed in a positive terminal welded to the head of the hollow rivet.
摘要翻译： 密封蓄电池具有密封组件，其包括通过垫圈安装到盖板的中空铆钉和将正极集流器连接到中空铆钉的引线片。 将中空铆钉安装到盖板上是通过用具有锥形末端部分的冲头对中空铆钉的空心轴的远端部分进行加压来实现的，以便通过扩大中空铆钉的远端部分来缩小中空铆钉的远端部分 部分径向向外。 可以提高盖板，中空铆钉，垫圈和引线片之间的构件的相对表面之间的紧密性，从而在电池中提供优异的耐液体泄漏性。 安全阀的阀体容纳在焊接到中空铆钉的头部的正端子中。
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公开(公告)号：US09303332B2
公开(公告)日：2016-04-05
申请号：US13610946
申请日：2012-09-12
CPC分类号： C30B29/06 , C30B15/04 , C30B15/206 , C30B33/02
摘要： Silicon single crystal substrates having uniform resistance, few BMDs in a surface layer and a moderate number of BMDs in a center of thickness of the substrate are formed from Czochralski silicon single crystals. The substrates have a resistivity in the center of a first main surface not lower than 50 Ω·cm and a rate of change in resistivity in the first main surface not higher than 3%, an average density of bulk micro defects in a region between the first main surface and a plane at a depth of 50 μm of less than 1×108/cm3, and an average density of bulk micro defects in a region lying between a plane at a depth of 300 μm and a plane at a depth of 400 μm from the first main surface not lower than 1×108 /cm3 and not higher than 1×109 /cm3.
摘要翻译： 由Czochralski硅单晶形成具有均匀电阻的硅单晶衬底，表面层中的BMD少，衬底厚度中心的中等数量的BMD。 基板在第一主表面的中心具有不低于50Ω·cm·cm的电阻率，并且第一主表面中的电阻率变化率不高于3％，平均密度为 第一主表面和深度为50μm的平面小于1×10 8 / cm 3，并且在深度为300μm的平面之间的区域中的体微观缺陷的平均密度和深度为 距第一主表面400μm不小于1×10 8 / cm 3且不大于1×10 9 / cm 3。
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公开(公告)号：US5586993A
公开(公告)日：1996-12-24
申请号：US456564
申请日：1995-06-01
申请人： Ken Saito , Naoyoshi Hinotsu , Hikaru Sakamoto , Koichi Hoshino
发明人： Ken Saito , Naoyoshi Hinotsu , Hikaru Sakamoto , Koichi Hoshino
CPC分类号： H01M2/06 , H01M2/0426 , H01M2/1229 , H01M10/24 , Y02E60/124 , Y10T29/4911
摘要： A sealed storage battery has a sealing assembly including a hollow rivet mounted to a cover plate via a gasket and a lead piece connecting a positive collector to the hollow rivet. Mounting the hollow rivet to the cover plate is achieved by pressurizing a distal end portion of a hollow shaft of the hollow rivet with a punch having a conical tip end portion so as to caulk the distal end portion of the hollow rivet by enlarging the distal end portion diametrically outward. Tightness between the opposing surfaces of the members among the cover plate, hollow rivet, gasket and lead piece can be enhanced, providing excellent liquid leakage resistance in the battery. A valve body of a safety valve is housed in a positive terminal welded to the head of the hollow rivet.
摘要翻译： 密封蓄电池具有密封组件，其包括通过垫圈安装到盖板的中空铆钉和将正极集流器连接到中空铆钉的引线片。 将中空铆钉安装到盖板上是通过用具有锥形末端部分的冲头对中空铆钉的空心轴的远端部分进行加压来实现的，以便通过扩大中空铆钉的远端部分来缩小中空铆钉的远端部分 部分径向向外。 可以提高盖板，中空铆钉，垫圈和引线片之间的构件的相对表面之间的紧密性，从而在电池中提供优异的耐液体泄漏性。 安全阀的阀体容纳在焊接到中空铆钉的头部的正端子中。
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