公开(公告)号：US09040927B2

公开(公告)日：2015-05-26

申请号：US13713523

申请日：2012-12-13

申请人： Go Kawata ,  Hideyuki Funaki ,  Honam Kwon ,  Risako Ueno ,  Kazuhiro Suzuki

发明人： Go Kawata ,  Hideyuki Funaki ,  Honam Kwon ,  Risako Ueno ,  Kazuhiro Suzuki

IPC分类号： G01T1/20

CPC分类号： G01T1/2002 ,  G01N23/046 ,  G01T1/2018 ,  G01T1/248

摘要： A radiation detection apparatus according to an embodiment includes: a scintillator including a fluorescent material to convert radiation to visible radiation photon; a photon detection device array having a plurality of cells each of which includes a photon detection device to detect visible radiation photon emitted from a fluorescent material in the scintillator and convert the visible radiation photon to an electric signal; and a plurality of lenses provided on cells respectively in association with the cells to cause the visible radiation photon to be incident on the photon detection device in an associated cell.

摘要翻译： 根据实施例的放射线检测装置包括：闪烁体，其包括用于将辐射转换成可见光辐射的荧光材料; 具有多个单元的光子检测装置阵列，每个单元包括光子检测装置，用于检测从闪烁体中的荧光材料发射的可见辐射光子，并将可见光辐射光转换成电信号; 以及分别与单元相关联地设置在单元上的多个透镜，以使可见光辐射入射到相关单元中的光子检测装置上。

公开(公告)号：US08735821B2

公开(公告)日：2014-05-27

申请号：US13428746

申请日：2012-03-23

申请人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

发明人： Koichi Ishii ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki ,  Risako Ueno ,  Honam Kwon

IPC分类号： G01J5/20 ,  H01L27/146 ,  G01J5/14

CPC分类号： G01J5/14 ,  G01J5/04 ,  G01J5/045 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0853 ,  G01J5/10 ,  G01J5/22 ,  H01L27/14649 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/00

摘要： An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.

摘要翻译： 一种红外成像装置，包括：以矩阵形式布置在安装在包装中的基板上的连接布线部分; 第一红外线检测部和第二红外线检测部，被配置为将吸收的红外辐射的强度转换为相应的第一和第二信号，第二红外线检测部的导热性比第一红外线检测部小。 以及盖构件，其附接到所述封装件以限定与所述基板的气密间隙，所述连接布线部分，所述第一和第二红外检测部分容纳在所述间隙内; 其中在所述间隙内测量真空度，并且基于所测量的真空度发出警告。

公开(公告)号：US08686340B2

公开(公告)日：2014-04-01

申请号：US13361321

申请日：2012-01-30

申请人： Risako Ueno ,  Hideyuki Funaki ,  Kazuhiro Suzuki ,  Mitsuyoshi Kobayashi ,  Honam Kwon

发明人： Risako Ueno ,  Hideyuki Funaki ,  Kazuhiro Suzuki ,  Mitsuyoshi Kobayashi ,  Honam Kwon

IPC分类号： H01L27/00

CPC分类号： H01L27/14623 ,  H01L27/14632 ,  H01L27/14634

摘要： According to one embodiment, a solid imaging device includes an imaging substrate, a light-shielding member and a AD conversion circuits. The imaging substrate is two-dimensionally arranged with a plurality of pixels. The plurality of pixels have a top face formed with an optoelectronic conversion element for converting incident light into an electric charge and storing it and a back face opposite to the top faces. The imaging substrate is formed with a top face by the top face of the plurality of pixels and formed with a back face by the back face of the plurality of pixels. The light-shielding member is provided on the top face side of the imaging substrate. The AD conversion circuits is formed on the back face of the pixels shielded from the light.

摘要翻译： 根据一个实施例，固体成像装置包括成像基板，遮光部件和AD转换电路。 成像基板二维排列有多个像素。 多个像素具有形成有光电转换元件的顶面，用于将入射光转换成电荷并将其存储，并且与顶面相反的背面。 成像基板由多个像素的顶面形成有顶面，并且由多个像素的背面形成有背面。 遮光构件设置在成像基板的顶面侧。 AD转换电路形成在屏蔽光的像素的背面上。

公开(公告)号：US08629396B2

公开(公告)日：2014-01-14

申请号：US13235388

申请日：2011-09-18

申请人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

发明人： Masako Ogata ,  Ikuo Fujiwara ,  Hiroto Honda ,  Kazuhiro Suzuki ,  Honam Kwon ,  Risako Ueno ,  Hitoshi Yagi ,  Masaki Atsuta ,  Koichi Ishii ,  Keita Sasaki ,  Hideyuki Funaki

IPC分类号： H01L27/146

CPC分类号： H01L27/14649 ,  H01L27/14632 ,  H01L27/14687

摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。

公开(公告)号：US20130242161A1

公开(公告)日：2013-09-19

申请号：US13714960

申请日：2012-12-14

申请人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

发明人： Mitsuyoshi Kobayashi ,  Risako Ueno ,  Kazuhiro Suzuki ,  Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H04N5/225

CPC分类号： H04N5/2254 ,  H04N5/2171

摘要： A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array.

摘要翻译： 根据实施例的固态成像装置包括：成像元件，其包括多个像素块，每个像素块包含多个像素; 第一光学系统，其在成像平面上形成物体的图像; 以及包括微透镜阵列的第二光学系统，所述微透镜阵列包括透光衬底，形成在所述透光衬底上的多个第一微透镜以及围绕所述第一微透镜形成的多个第二微透镜，所述第一微透镜的焦距 基本上等于第二微透镜的焦距，与透光基板接触的第一微透镜的面积大于与透光基板接触的第二微透镜的面积，第二光学系统被配置为减小 并且通过微透镜阵列重建在像素块上的成像平面上形成的图像。

公开(公告)号：US08338901B2

公开(公告)日：2012-12-25

申请号：US12875534

申请日：2010-09-03

申请人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Tatsuo Shimizu ,  Masamichi Suzuki

发明人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Tatsuo Shimizu ,  Masamichi Suzuki

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/14629

摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷 ，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

公开(公告)号：US08212214B2

公开(公告)日：2012-07-03

申请号：US13052903

申请日：2011-03-21

申请人： Hiroto Honda ,  Hideyuki Funaki

发明人： Hiroto Honda ,  Hideyuki Funaki

IPC分类号： G01J5/00 ,  G01J5/20

CPC分类号： G01V8/10 ,  G01J5/20 ,  G01J5/22 ,  G01J2005/0077 ,  H01L27/144 ,  H01L31/101 ,  H04N5/33

摘要： It is possible to quickly and readily determine the location of an object. A solid-state imaging element according to an embodiment includes: at least two infrared detectors formed on a semiconductor substrate; an electric interconnect configured to connect the at least two infrared detectors in series; and a comparator unit configured to compare an intermediate voltage of the electric interconnect connecting the infrared detectors in series, with a predetermined reference voltage.

摘要翻译： 可以快速，容易地确定对象的位置。 根据实施例的固态成像元件包括：形成在半导体衬底上的至少两个红外检测器; 配置为串联连接所述至少两个红外检测器的电互连; 以及比较器单元，被配置为将连接红外线检测器的电气互连串联的中间电压与预定的参考电压进行比较。

公开(公告)号：US20120133011A1

公开(公告)日：2012-05-31

申请号：US13363801

申请日：2012-02-01

申请人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida

发明人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689

摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.

摘要翻译： 根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光 所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜 第二半导体层覆盖第二半导体层。

公开(公告)号：US20120061791A1

公开(公告)日：2012-03-15

申请号：US13069610

申请日：2011-03-23

申请人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

发明人： Masaki Atsuta ,  Hideyuki Funaki ,  Keita Sasaki

IPC分类号： H01L29/66

CPC分类号： G01J5/10 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853 ,  G01J5/20

摘要： According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

摘要翻译： 根据一个实施例，红外检测装置包括检测元件。 检测元件包括半导体衬底，信号互连部分，检测单元和支撑部分。 半导体衬底在半导体衬底的表面上设置有空腔。 信号互连部分设置在围绕半导体衬底的空腔的区域中。 与空腔上方的半导体衬底间隔开的检测单元包括热电转换层和吸收层。 吸收层与热电转换层层叠，并且设置有多个孔，每个孔具有上部加宽的形状。 支撑部分将检测单元保持在空腔上方并连接信号互连部分和检测单元。

公开(公告)号：US20120007205A1

公开(公告)日：2012-01-12

申请号：US12883732

申请日：2010-09-16

申请人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

发明人： Kazuhiro Suzuki ,  Ikuo Fujiwara ,  Keita Sasaki ,  Honam Kwon ,  Hitoshi Yagi ,  Hiroto Honda ,  Koichi Ishii ,  Masako Ogata ,  Risako Ueno ,  Hideyuki Funaki

IPC分类号： H01L31/101 ,  H01L31/18

CPC分类号： G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  H04N5/33

摘要： Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

摘要翻译： 某些实施例提供了一种红外成像装置，包括：SOI结构，其被放置在离基板一定距离处，并且包括：热敏二极管，其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括：将信号传输到垂直信号线的互连单元; 以及层叠绝缘层，夹着所述互连单元，所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。