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    INJECTION MOLDING METHOD
    1.
    发明申请
    INJECTION MOLDING METHOD 审中-公开
    注射成型方法

    公开(公告)号：US20110215496A1

    公开(公告)日：2011-09-08

    申请号：US13040662

    申请日：2011-03-04

    Applicant: TORU OGURA ,  HIDETOSHI KAWASAKI ,  HIROKAZU YAGISHITA

    Inventor： TORU OGURA ,  HIDETOSHI KAWASAKI ,  HIROKAZU YAGISHITA

    IPC: B29C45/76 ,  B29C45/00

    CPC classification number: B29C45/76 ,  B29C2945/76498 ,  B29C2945/76561 ,  B29C2945/76605 ,  B29C2945/76662 ,  B29C2945/76665 ,  B29C2945/76765 ,  B29C2945/76832

    Abstract: An injection molding method including a measuring step for measuring an amount of the molding material by storing a molding material fed into a cylinder of an injection molding apparatus in a tip of the cylinder by rotation of a screw and stopping a rotation of the screw after the screw is retracted to a measurement set position by a pressure from the stored molding material itself. The measuring step comprises: setting a back pressure to be applied on the screw, to a predetermined value; setting a rotation speed of the screw to a constant rotation speed within a predetermined range; and adjusting a feeding speed of the molding material to a predetermined time so that the measuring time is controlled irrespective of the rotation speed of the screw and the back pressure set value.

    Abstract translation: 一种注射成型方法，包括：测量步骤，用于通过旋转螺杆将存储注射成型设备的气缸中的注射成型设备的气缸中的成型材料储存在所述气缸的尖端中，并且在所述模具材料的旋转之后停止所述螺杆的旋转， 螺杆通过存储的模制材料本身的压力缩回到测量设定位置。 测量步骤包括：将施加在螺钉上的背压设定为预定值; 将螺杆的旋转速度设定在预定范围内的恒定转速; 并且将成型材料的进给速度调整到预定时间，从而与螺杆的转速和背压设定值无关地控制测量时间。

    INJECTION-MOLDED ARTICLE OF A PET FIBER-REINFORCED POLYLACTIC ACID RESIN AND MANUFACTURING METHOD FOR THE SAME
    2.
    发明申请
    INJECTION-MOLDED ARTICLE OF A PET FIBER-REINFORCED POLYLACTIC ACID RESIN AND MANUFACTURING METHOD FOR THE SAME 审中-公开
    PET纤维增强聚酰胺树脂的注射成型品及其制造方法

    公开(公告)号：US20100189987A1

    公开(公告)日：2010-07-29

    申请号：US12669403

    申请日：2008-07-11

    Applicant: Hidetoshi Kawasaki

    Inventor： Hidetoshi Kawasaki

    IPC: C08K7/14 ,  B29C44/04 ,  B29C45/00 ,  C08J5/00

    CPC classification number: B29C45/0005 ,  B29K2105/126 ,  C08J5/046 ,  C08L67/02 ,  C08L67/04 ,  C08L2205/16 ,  Y10T428/249986 ,  C08L2666/18

    Abstract: Provided is a manufacturing method for injection-molded articles, comprising subjecting a resin composition for use in injection molding, which contains a polylactic acid resin and PET fibers with a lactic acid component content of 50% by weight or more, and is compounded at a compounding temperature of 230° C. or lower, to injection molding at an injection molding temperature of 190 to 230° C. to obtain a molded article of high strength in which voids around the PET fibers are 50% or less on the PET fibers in sectional area in the article's sections, and the PET fibers within the article are not deteriorated. The molded article has a higher strength than conventional, and is applicable as a constituent part for larger products with heavier weights, such as copying machines and printers.

    Abstract translation: 本发明提供一种注射成型品的制造方法，其特征在于，将含有聚乳酸树脂的注射成型用树脂组合物和乳酸成分含量为50重量％以上的PET纤维进行混合， 复合温度为230℃以下，注塑成型温度为190〜230℃，得到PET纤维上的PET纤维周围的空隙为50％以下的高强度成形品 制品的截面积，制品内的PET纤维不劣化。 模制品具有比常规的强度更高的强度，并且作为复印机和打印机等重量较大的较大产品的组成部分适用。

    Cutting method of fabric material
    3.
    发明授权
    Cutting method of fabric material 失效
    织物材料切割方法

    公开(公告)号：US07536937B2

    公开(公告)日：2009-05-26

    申请号：US11000985

    申请日：2004-12-02

    Applicant: Hidetoshi Kawasaki ,  Ken Shimizu

    Inventor： Hidetoshi Kawasaki ,  Ken Shimizu

    IPC: B26D7/10

    CPC classification number: B26D7/086 ,  B26D7/10 ,  Y10T83/041 ,  Y10T83/0414 ,  Y10T83/283

    Abstract: A fabric material has a base fabric, a pile layer on a surface of the base fabric, and an adhesive layer of a hot-melt adhesive on another surface of the base fabric. The adhesive layer contains a wax whose melting point Tm1 is from 20° C. to 50° C. lower than the melting point Tm2 of the base polymer. The fabric material is heated by a heating device to at least (Tm1+5)° C. and (Tm2−5)° C., and then cut by a ultrasonic wave cutter 23. Thus the fabric material can be cut without generating the chaffs of the adhesive agent and the fiber offscums. As a result, the pollution is not made in the cutting process, and the cutting of the fabric material is made continuously and stably. Without the adhesion of the chaffs, the teremp which has a good surface formed by the cutting.

    Abstract translation: 织物材料具有基底织物，基底织物的表面上的绒毛层，以及在基底织物的另一表面上的热熔粘合剂的粘合剂层。 粘合层含有熔点Tm1比基体聚合物的熔点Tm2低20℃〜50℃的蜡。 将织物材料通过加热装置加热至至少（Tm1 + 5）℃和（Tm2-5）℃，然后用超声波切割器23切割。因此，可以切割织物材料而不产生 粘合剂和纤维片的谷壳。 结果，在切割过程中不会产生污染，并且连续稳定地切割织物材料。 没有谷壳的粘附，通过切割形成的具有良好表面的颤音。

    Cartridge for Photosensitive Recording Medium
    4.
    发明申请
    Cartridge for Photosensitive Recording Medium 审中-公开
    墨盒用于感光记录介质

    公开(公告)号：US20080028421A1

    公开(公告)日：2008-01-31

    申请号：US11721840

    申请日：2005-12-22

    Applicant: Hidetoshi Kawasaki ,  Tetsuya Takatori

    Inventor： Hidetoshi Kawasaki ,  Tetsuya Takatori

    IPC: G11B23/03 ,  G03H1/04

    CPC classification number: G11B23/0316 ,  G11B23/0308

    Abstract: A cartridge (2) is composed of a lower shell (30), an upper shell (31), a shutter 10 and a lock mechanism (11). A hologram recording disk (4) is rotatably contained in a disk recess (3) of a cartridge body (25) formed by joining the lower shell (30) and the upper shell (31). Inner surfaces of the lower shell (30) and the upper shell (31) are provided with a first concave portion (34), a second concave portion (35), a first convex portion (42) and a second convex portion (43). When the lower shell (30) and the upper shell (31) are joined, the concave portions and the convex portions engage to form a labyrinth-like light-shielding structure. In virtue of this, light and dust are prevented from entering through a gap residing between the lower shell (30) and the upper shell (31).

    Abstract translation: 盒（2）由下壳（30），上壳（31），闸板10和锁机构（11）构成。 全息记录盘（4）可旋转地容纳在通过连接下壳体（30）和上壳体（31）形成的盒体（25）的盘凹槽（3）中。 下壳体（30）和上壳体（31）的内表面设置有第一凹部（34），第二凹部（35），第一凸部（42）和第二凸部（43） 。 当下壳体（30）和上壳体（31）接合时，凹部和凸部接合形成迷宫状遮光结构。 由此，防止了光和灰尘通过位于下壳体（30）和上壳体（31）之间的间隙进入。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US06365925B2

    公开(公告)日：2002-04-02

    申请号：US09151584

    申请日：1998-09-11

    Applicant: Ichiro Hase ,  Mitsuhiro Nakamura ,  Hidetoshi Kawasaki ,  Shinichi Wada

    Inventor： Ichiro Hase ,  Mitsuhiro Nakamura ,  Hidetoshi Kawasaki ,  Shinichi Wada

    IPC: H01L31072

    CPC classification number: H01L29/7785

    Abstract: A semiconductor device that is easily operated with a single positive voltage supply and exhibits an excellent linearity of mutual conductance and source-gate capacitance with regard to a gate voltage is provided. The semiconductor device comprises a second barrier layer of AlGaAs, a channel layer of InGaAs and a first barrier layer of AlGaAs that are stacked in this order on a substrate of GaAs with a buffer layer of u-GaAs between the substrate and the second barrier layer. Carrier supply regions doped with n-type impurity are formed in part of the first and second barrier layers. A low resistivity region including a high concentration of p-type impurity (Zn) is formed in the first barrier layer. The low resistivity region is buried in a high resistivity region and brought to contact with a gate electrode. Upon an application of positive voltage to the gate electrode, a carrier deficient region disappears in the channel layer and no parasitic resistance component remains.

    Abstract translation: 提供了一种使用单个正电压电源容易操作且相对于栅极电压具有优异的互导线性和源极 - 栅极电容的半导体器件。 半导体器件包括AlGaAs的第二阻挡层，InGaAs的沟道层和AlGaAs的第一势垒层，其依次层叠在具有衬底和第二势垒层之间的具有u-GaAs缓冲层的GaAs衬底上 。 在第一和第二阻挡层的一部分中形成掺杂有n型杂质的载流子供应区。 在第一阻挡层中形成包含高浓度p型杂质（Zn）的低电阻率区域。 低电阻率区域被埋在高电阻率区域中并与栅电极接触。 当向栅极施加正电压时，载流子缺陷区域在沟道层中消失，并且不存在寄生电阻分量。

    Cartridge for Photosensitive Recording Medium
    7.
    发明申请
    Cartridge for Photosensitive Recording Medium 审中-公开
    墨盒用于感光记录介质

    公开(公告)号：US20080196051A1

    公开(公告)日：2008-08-14

    申请号：US11885592

    申请日：2006-02-28

    Applicant: Tetsuya Takatori ,  Tomoyuki Takahashi ,  Hidetoshi Kawasaki

    Inventor： Tetsuya Takatori ,  Tomoyuki Takahashi ,  Hidetoshi Kawasaki

    IPC: G11B23/03

    CPC classification number: G11B23/0315 ,  G03H2001/0232 ,  G11B23/0308

    Abstract: A cartridge (2) contains a recording disk (4) having photosensitivity. The cartridge comprises a cartridge shell (11), a light shielding plate (12) and a shutter (13). The cartridge shell has an internal opening (18) for exposing a central portion and a recording surface of the recording disk to the outside. The light shielding plate is attached to an outer side of the cartridge shell and has an external opening (14) confronting the internal opening. The shutter is slidably disposed between the cartridge shell and the light shielding plate to open and close the internal opening. A lock mechanism locks the shutter in a closed position. For releasing the lock mechanism, it is necessary to slide a first lock member (63), which is exposed through a cavity (72), in a state that a second lock member (64) projecting into a groove (7) is pushed into the cartridge shell.

    Abstract translation: 盒（2）包含具有光敏性的记录盘（4）。 盒包括盒壳（11），遮光板（12）和挡板（13）。 盒壳具有用于将记录盘的中心部分和记录表面暴露于外部的内部开口（18）。 遮光板附接到盒壳体的外侧，并且具有面对内部开口的外部开口（14）。 快门可滑动地设置在盒壳和遮光板之间以打开和关闭内部开口。 锁定机构将快门锁定在关闭位置。 为了释放锁定机构，必须在突出到槽（7）中的第二锁定构件（64）被推入的状态下滑动通过空腔（72）暴露的第一锁定构件（63） 墨盒外壳。

    Junction field effect transistor and method of producing the same
    10.
    发明授权
    Junction field effect transistor and method of producing the same 失效
    结场效应晶体管及其制造方法

    公开(公告)号：US06201269B1

    公开(公告)日：2001-03-13

    申请号：US08458724

    申请日：1995-06-02

    Applicant: Chiaki Takano ,  Hidetoshi Kawasaki ,  Masaru Wada

    Inventor： Chiaki Takano ,  Hidetoshi Kawasaki ,  Masaru Wada

    IPC: H01L2976

    CPC classification number: H01L29/66924 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/1066 ,  H01L29/808

    Abstract: For suppressing generation of leakage current and side-gate effect in a junction field effect transistor, a gate extension is formed on a semi-insulative compound semiconductor substrate in a manner to extend from a gate and to protrude outward beyond a channel transversely thereto, and an insulating layer is formed on the semi-insulative compound semiconductor substrate under the gate extension. A method of producing this transistor comprises the steps of first forming a channel and a source-drain on a substrate, then forming a gate on the channel together with a gate extension which extends from the gate and protrudes outward beyond the channel transversely thereto, and forming an insulating layer adjacently to the channel and the source-drain in such a manner that no gap is existent between the insulating layer and at least the channel.

    Abstract translation: 为了抑制结型场效应晶体管中的漏电流和侧栅效应的产生，在半绝缘化合物半导体基板上以从栅极延伸并向外突出超过横向通道的方式形成栅极延伸，以及 在栅极延伸部分的半绝缘性化合物半导体基板上形成绝缘层。 制造该晶体管的方法包括以下步骤：首先在衬底上形成沟道和源极 - 漏极，然后在沟道上形成栅极以及从栅极延伸并从其横向向外突出超过沟槽的栅极延伸，以及 以与绝缘层和至少沟道之间不存在间隙的方式形成与沟道和源极 - 漏极相邻的绝缘层。

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