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    PROCESSING CHAMBER WITH COOLED GAS DELIVERY LINE
    2.
    发明申请
    PROCESSING CHAMBER WITH COOLED GAS DELIVERY LINE 审中-公开
    具有冷却气体输送管线的加工室

    公开(公告)号：US20120279943A1

    公开(公告)日：2012-11-08

    申请号：US13462939

    申请日：2012-05-03

    申请人： Helinda Nominanda ,  Tae Kyung Won ,  Seon-Mee Cho ,  Beom Soo Park ,  Soo Young Choi

    发明人： Helinda Nominanda ,  Tae Kyung Won ,  Seon-Mee Cho ,  Beom Soo Park ,  Soo Young Choi

    IPC分类号： C23C16/50 ,  B05C9/00 ,  B44C1/22 ,  C23C16/511

    CPC分类号： C23C16/45572 ,  C23C16/511

    摘要： A method and apparatus for processing a substrate is provided. In one embodiment, the apparatus is in the form of a processing chamber that includes a chamber body having a processing volume defined therein. A substrate support, a gas delivery tube assembly and a plasma line source are disposed in the processing volume. The gas delivery tube assembly includes an inner tube is disposed in an outer tube. The inner tube has a passage for flowing a cooling fluid therein. The outer tube has a plurality of gas distribution apertures for providing processing gas into the processing volume.

    摘要翻译： 提供了一种用于处理衬底的方法和设备。 在一个实施例中，该装置是处理室的形式，其包括其中限定有处理容积的室主体。 衬底支撑件，气体输送管组件和等离子体线源设置在处理体积中。 气体输送管组件包括内管，其设置在外管中。 内管具有用于在其中流动冷却流体的通道。 外管具有多个气体分配孔，用于将处理气体提供到处理容积中。

    THIN FILM DEPOSITION USING MICROWAVE PLASMA
    3.
    发明申请
    THIN FILM DEPOSITION USING MICROWAVE PLASMA 有权
    薄膜沉积使用微波等离子体

    公开(公告)号：US20120171391A1

    公开(公告)日：2012-07-05

    申请号：US13331021

    申请日：2011-12-20

    申请人： Tae Kyung WON ,  Helinda NOMINANDA ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo PARK ,  John M. WHITE ,  Suhail ANWAR ,  Jozef KUDELA

    发明人： Tae Kyung WON ,  Helinda NOMINANDA ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo PARK ,  John M. WHITE ,  Suhail ANWAR ,  Jozef KUDELA

    IPC分类号： C23C16/511

    CPC分类号： C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244

    摘要： Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.

    摘要翻译： 本发明的实施方案通常提供使用改进的微波辅助CVD室的含硅介电层的沉积工艺。 在一个实施例中，提供了一种在处理室中处理衬底的方法。 该方法通常包括将微波功率施加到耦合到设置在处理室内的微波源的天线，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置成提供覆盖基板整个表面的气体分布覆盖， 并将衬底暴露于由气体供给源提供的处理气体产生的微波等离子体中，以在低于约200摄氏度的温度下将含硅层沉积在衬底上，微波等离子体使用约500毫瓦的微波功率 cm 2至约5,000毫瓦/ cm 2，频率约为1GHz至约10GHz。