公开(公告)号：US20050174821A1

公开(公告)日：2005-08-11

申请号：US10507390

申请日：2003-03-07

Applicant: YuanKai Zheng ,  Yihong Wu ,  Zai Guo ,  Jin Jun Qiu ,  Ke Bin Li ,  Gu Chang Han

Inventor： YuanKai Zheng ,  Yihong Wu ,  Zai Guo ,  Jin Jun Qiu ,  Ke Bin Li ,  Gu Chang Han

IPC: G11C11/15 ,  G11C11/56 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C19/08

CPC classification number: G11C11/5607 ,  G11C11/1675

Abstract: A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer as a pinned magnetic layer and a read layer as an unpinned layer. The unpinned layer has a higher Curie point than the pinned layer. The pinned layer in an individual cell is heated to near its Curie point and a bit line current and a word line current is used to align the magnetization vector of the recording layer at a plurality of angles relative to the magnetization vector of the read layer.

Abstract translation: 具有多个存储单元的多状态磁阻随机存取存储单元（MRAM），每个单元被独立于其它单元写入和读取。 多个存储单元包括作为固定磁性层的记录层和作为未固定层的读取层。 未固化层的居里点比固定层高。 单个单元中的被钉扎层被加热到其居里点附近，并且使用位线电流和字线电流来相对于读取层的磁化矢量以多个角度对准记录层的磁化矢量。