公开(公告)号：US08083986B2

公开(公告)日：2011-12-27

申请号：US12315520

申请日：2008-12-04

Applicant: Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

Inventor： Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

IPC: B28B1/00

CPC classification number: C22C1/04 ,  B22F2998/00 ,  B22F1/0018

Abstract: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

Abstract translation: 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

公开(公告)号：US08020805B2

公开(公告)日：2011-09-20

申请号：US11831233

申请日：2007-07-31

Applicant: Sang H. Choi ,  James R. Elliott, Jr. ,  Glen C. King ,  Yeonjoon Park ,  Jae-Woo Kim ,  Sang-Hyon Chu

Inventor： Sang H. Choi ,  James R. Elliott, Jr. ,  Glen C. King ,  Yeonjoon Park ,  Jae-Woo Kim ,  Sang-Hyon Chu

IPC: B64B1/06 ,  B64B1/02

CPC classification number: B64B1/06 ,  B64B1/20 ,  B64B1/30 ,  B64C2201/022 ,  B64C2201/042 ,  B64C2201/122 ,  B64C2201/125 ,  B64C2201/127 ,  H01L35/16 ,  H01L35/22 ,  H01L35/26

Abstract: A new High Altitude Airship (HAA) capable of various extended applications and mission scenarios utilizing inventive onboard energy harvesting and power distribution systems. The power technology comprises an advanced thermoelectric (ATE) thermal energy conversion system. The high efficiency of multiple stages of ATE materials in a tandem mode, each suited for best performance within a particular temperature range, permits the ATE system to generate a high quantity of harvested energy for the extended mission scenarios. When the figure of merit 5 is considered, the cascaded efficiency of the three-stage ATE system approaches an efficiency greater than 60 percent.

Abstract translation: 一个新的高空飞艇（HAA），能够利用创新的机载能量采集和配电系统进行各种扩展应用和任务情景。 电力技术包括先进的热电（ATE）热能转换系统。 多级ATE材料在串联模式下的高效率，各自适合在特定温度范围内的最佳性能，允许ATE系统为扩展的任务情景产生大量的收获能量。 当考虑品质因数5时，三级ATE系统的级联效率接近效率大于60％。

公开(公告)号：US20110117690A1

公开(公告)日：2011-05-19

申请号：US12928128

申请日：2010-12-03

Applicant: Sang-Hyon Chu ,  Sang Hyouk Choi ,  Jae-Woo Kim ,  Yeonjoon Park ,  James R. Elliott, JR. ,  Glen C. King ,  Diane M. Stoakley

Inventor： Sang-Hyon Chu ,  Sang Hyouk Choi ,  Jae-Woo Kim ,  Yeonjoon Park ,  James R. Elliott, JR. ,  Glen C. King ,  Diane M. Stoakley

IPC: H01L21/20

CPC classification number: B64B1/06 ,  B64B1/20 ,  B64B1/30 ,  B64C2201/022 ,  B64C2201/042 ,  B64C2201/122 ,  B64C2201/125 ,  B64C2201/127 ,  H01L35/16 ,  H01L35/22 ,  H01L35/26

Abstract: A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

Abstract translation: 在先进的热电（TE）材料的开发中，设计了一种新型的纳米复合碲化铋（Bi-Te）材料，具有低维（量子点，量子线或量子阱）结构。 碲化铋目前是固态TE冷却装置最有名的候选材料，因为它在室温下具有最高的TE品质因数。 这里描述的创新工艺允许将纳米尺度的空隙纳入Bi-Te材料。 最终的纳米结构如空隙尺寸，尺寸分布，空隙位置等也可以在各种工艺条件下进行控制。

公开(公告)号：US20100039643A1

公开(公告)日：2010-02-18

申请号：US12496788

申请日：2009-07-02

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

IPC: G01J3/28

CPC classification number: G01J3/18 ,  G01J3/02 ,  G01J3/0229 ,  G01J2003/1861 ,  G02F1/134309

Abstract: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

Abstract translation: 光谱仪系统包括用于准直光的光学组件，具有多个同轴对准的环形光栅的微环格栅组件，限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者，光栅可以电连接到能量供应并且例如用交流电压通电，以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光，将准直光引导到微环格栅组件上，以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点，并使用光子检测器检测光谱特性。

公开(公告)号：US20100039641A1

公开(公告)日：2010-02-18

申请号：US12487735

申请日：2009-06-19

Applicant: Yeonjoon Park ,  Glen C. King ,  James R. Elliott ,  Sang H. Choi

Inventor： Yeonjoon Park ,  Glen C. King ,  James R. Elliott ,  Sang H. Choi

IPC: G01J3/04 ,  G01J3/28

CPC classification number: G01J3/18 ,  G01J3/02 ,  G01J3/0229 ,  G01J3/0237 ,  G01J3/0256 ,  G02B5/005 ,  G02B5/1876

Abstract: A spectrometer includes a micro-ring grating device having coaxially-aligned ring gratings for diffracting incident light onto a target focal point, a detection device for detecting light intensity, one or more actuators, and an adjustable aperture device defining a circular aperture. The aperture circumscribes a target focal point, and directs a light to the detection device. The aperture device is selectively adjustable using the actuators to select a portion of a frequency band for transmission to the detection device. A method of detecting intensity of a selected band of incident light includes directing incident light onto coaxially-aligned ring gratings of a micro-ring grating device, and diffracting the selected band onto a target focal point using the ring gratings. The method includes using an actuator to adjust an aperture device and pass a selected portion of the frequency band to a detection device for measuring the intensity of the selected portion.

Abstract translation: 光谱仪包括具有用于将入射光衍射到目标焦点的同轴对准环形光栅的微环格栅装置，用于检测光强度的检测装置，一个或多个致动器以及限定圆形孔径的可调节孔径装置。 光圈限定目标焦点，并将光引导到检测装置。 使用致动器可选择性地调节孔径装置，以选择频带的一部分以传输到检测装置。 检测入射光的所选频带的强度的方法包括将入射光引导到微环光栅装置的同轴对准的环形光栅上，并使用环形光栅将所选择的带衍射到目标焦点上。 该方法包括使用致动器来调节孔径装置并将频带的选定部分传递到用于测量所选部分的强度的检测装置。

公开(公告)号：US20090231677A1

公开(公告)日：2009-09-17

申请号：US12047465

申请日：2008-03-13

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

IPC: G02F1/29

CPC classification number: G02B3/14 ,  G02F2001/291

Abstract: An optical assembly includes a zone plate and electro-optic material disposed on one side of the zone plate. The electro-optic material's index of refraction is controlled to adjust the optical properties of the optical assembly.

Abstract translation: 光学组件包括设置在区域板一侧的区域板和电光材料。 电光材料的折射率被控制以调整光学组件的光学特性。

公开(公告)号：US20090203196A1

公开(公告)日：2009-08-13

申请号：US12315519

申请日：2008-12-04

Applicant: Jae-Woo KIM ,  Sang H. CHOI, SR. ,  Peter T. LILLEHEI ,  Sang-Hyon CHU ,  Yeonjoon PARK ,  Glen C. KING ,  James R. ELLIOTT, JR.

Inventor： Jae-Woo KIM ,  Sang H. CHOI, SR. ,  Peter T. LILLEHEI ,  Sang-Hyon CHU ,  Yeonjoon PARK ,  Glen C. KING ,  James R. ELLIOTT, JR.

IPC: H01L21/20 ,  B22F9/02

CPC classification number: C01B19/007 ,  B01J13/02 ,  B01J13/203 ,  B22F1/0018 ,  B22F9/24 ,  B22F2001/0029 ,  B32B15/02 ,  B82Y5/00 ,  B82Y30/00 ,  H01L21/02428

Abstract: Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

Abstract translation: 使用树状聚合物分子制造金属和半导体纳米壳，特别是过渡金属纳米壳。 分别将金属胶体，金属离子或半导体与稳定化溶液中的树枝状聚合物表面上的胺基连接，用于表面接种方法和表面无底法。 随后，用额外的金属离子或半导体，稳定剂和NaBH 4重复该过程，以增加树枝状聚合物表面上的金属或半导体衬里的壁厚。 金属或半导体离子在金属或半导体纳米颗粒上自动减少，导致中空金属或半导体纳米颗粒的形成。 形成的中空纳米颗粒的空隙大小取决于树枝状大分子的产生。 树枝状大分子周围的金属或半导体薄膜的厚度取决于初始金属或半导体种子的重复次数和尺寸。

公开(公告)号：US07514726B2

公开(公告)日：2009-04-07

申请号：US11387086

申请日：2006-03-21

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott, Jr. ,  Diane M. Stoakley

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott, Jr. ,  Diane M. Stoakley

IPC: H01L31/00 ,  H01L35/26 ,  H01L31/117

CPC classification number: C30B25/02 ,  C30B29/52 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02532

Abstract: A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a orientation of the cubic diamond structure SiGe is aligned with a orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si1-xGex is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277

Abstract translation: 当在单晶Al 2 O 3衬底的{0001} C面上生长立方晶体结构SiGe的{111}晶面时，形成晶格匹配硅锗（SiGe）半导体合金，使得<111> 立方金刚石结构SiGe与{0001} C面的<1,0，-1.0>取向对齐。 通过使用硅原子比为0.7223原子％和0.2777原子百分比的锗的SiGe组合来实现衬底和SiGe之间的晶格匹配。 在立方金刚石结构SiGe上形成Si1-xGex层。 X（i）的值定义了满足0.2277

公开(公告)号：US07341883B2

公开(公告)日：2008-03-11

申请号：US11242415

申请日：2005-09-27

Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King

Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King

IPC: H01L21/00 ,  H01L29/04 ,  C30B23/00

CPC classification number: H01L31/1812 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02609 ,  H01L31/1037 ,  Y02E10/50

Abstract: A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al2O3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a orientation of the cubic diamond structure SiGe is aligned with a orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

Abstract translation: 硅锗（SiGe）半导体合金生长在单晶Al 2 O 3 3的衬底上。 立方金刚石结构SiGe的{111}晶面在衬底的{0001} C面上生长，使得立方晶体结构SiGe的<110>取向与<1,0,1.0> {0001} C面的取向。 通过使用硅原子比为0.7223原子％和0.2777原子百分比的锗的SiGe组合来实现衬底和SiGe之间的晶格匹配。

公开(公告)号：US08691612B2

公开(公告)日：2014-04-08

申请号：US13411793

申请日：2012-03-05

Applicant: Hyun-Jung Kim ,  Sang Hyouk Choi ,  Glen C. King ,  Yeonjoon Park ,  Kunik Lee

Inventor： Hyun-Jung Kim ,  Sang Hyouk Choi ,  Glen C. King ,  Yeonjoon Park ,  Kunik Lee

IPC: H01L21/00

CPC classification number: H01L37/00

Abstract: Provided is a method of enhancing thermoelectric performance by surrounding crystalline semiconductors with nanoparticles by contacting a bismuth telluride material with a silver salt under a substantially inert atmosphere and a temperature approximately near the silver salt decomposition temperature; and recovering a metallic bismuth decorated material comprising silver telluride crystal grains.

Abstract translation: 提供了一种通过在纳米颗粒周围结晶半导体与基本惰性气氛和大约接近银盐分解温度的温度下使碲化铋材料与银盐接触来提高热电性能的方法; 并回收包含碲化铋晶粒的金属铋装饰材料。