公开(公告)号：US07889628B2

公开(公告)日：2011-02-15

申请号：US12128788

申请日：2008-05-29

Applicant: Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

Inventor： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

IPC: G11B7/00

CPC classification number: G11B9/02 ,  G11C11/5657 ,  Y10S977/947

Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Abstract translation: 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

公开(公告)号：US20100238698A1

公开(公告)日：2010-09-23

申请号：US12801094

申请日：2010-05-21

Applicant: Chee-Khong Lim ,  Eun-Sik Kim

Inventor： Chee-Khong Lim ,  Eun-Sik Kim

IPC: G11C19/00

CPC classification number: G11C19/0808 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3222 ,  Y10S977/933

Abstract: A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer

Abstract translation: 一种采用磁畴壁运动的存储器件的数据记录和读取方法。 存储器件包括写入磁道，形成在写入磁道上的互连层，以及形成在互连层上的记录磁道

公开(公告)号：US07672081B2

公开(公告)日：2010-03-02

申请号：US11503296

申请日：2006-08-14

Applicant: Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

Inventor： Chee-kheng Lim ,  Eun-sik Kim ,  Yong-su Kim

IPC: G11B5/127

CPC classification number: G11B5/012 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B2005/0029

Abstract: A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.

Abstract translation: 垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。 垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端 在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

公开(公告)号：US07652906B2

公开(公告)日：2010-01-26

申请号：US11851049

申请日：2007-09-06

Applicant: Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

Inventor： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  G11C19/0841 ,  Y10S977/933

Abstract: Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

Abstract translation: 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。

公开(公告)号：US20080055789A1

公开(公告)日：2008-03-06

申请号：US11896214

申请日：2007-08-30

Applicant: Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

Inventor： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

IPC: G11B5/33

CPC classification number: G11C11/16

Abstract: Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

Abstract translation: 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

公开(公告)号：US07254757B2

公开(公告)日：2007-08-07

申请号：US10954834

申请日：2004-09-29

Applicant: Dong-Kyoo Park ,  Jong-Kook Kim ,  Jeong-Ho Bang ,  Sang-Young Choi ,  Eun-Sik Kim

Inventor： Dong-Kyoo Park ,  Jong-Kook Kim ,  Jeong-Ho Bang ,  Sang-Young Choi ,  Eun-Sik Kim

IPC: G11C29/00 ,  G11C7/00 ,  G01R31/28

CPC classification number: G11C29/56004 ,  G11C29/56 ,  G11C2029/2602

Abstract: A flash memory test system capable of test time reduction and an electrical test method using the same: The invention provides a parallel tester that includes a first memory and a second memory. The first and second memories are used to each supply different data to identical addresses within a plurality of DUTs, thereby making it possible to conduct in parallel tests such as trim tests, repair tests, and invalid block masking test. Thus parallel testing is done to replace testing that was previously done serially.

Abstract translation: 一种能够测试时间缩短的闪存测试系统和使用其的电测试方法。本发明提供一种包括第一存储器和第二存储器的并行测试器。 第一和第二存储器用于将不同的数据提供给多个DUT中的相同地址，从而使得可以在并行测试中进行诸如修整测试，修复测试和无效块掩蔽测试。 因此，进行并行测试来替代以前连续完成的测试。

公开(公告)号：US20060038247A1

公开(公告)日：2006-02-23

申请号：US11208618

申请日：2005-08-23

Applicant: Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

Inventor： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

IPC: H01L43/00

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer and a material layer formed around the insulating layer, the material layer being co-axial with the conductive layer and having a plurality of magnetic layers. The material layer includes a lower magnetic layer, a tunneling layer, and an upper magnetic layer that are sequentially stacked around and along the conductive layer.

公开(公告)号：US09000789B2

公开(公告)日：2015-04-07

申请号：US13240528

申请日：2011-09-22

Applicant: Eun-sik Kim ,  Kil-yeon Kim ,  Yun-bo Yang ,  Kui-hyun Ro ,  Heon-gwon Lee ,  Young-jae Jung

Inventor： Eun-sik Kim ,  Kil-yeon Kim ,  Yun-bo Yang ,  Kui-hyun Ro ,  Heon-gwon Lee ,  Young-jae Jung

IPC: G01R31/3187

CPC classification number: G01R31/2851 ,  G01R31/2607 ,  G01R31/2855 ,  G01R31/3187

Abstract: A method for testing a plurality of semiconductor apparatuses, the method including mounting a plurality of semiconductor apparatuses on a first test board, wherein the plurality of semiconductor apparatuses include test circuits, loading test software into the test circuits, performing, by using the test circuits, self-tests on the plurality of semiconductor apparatuses based on the test software, and removing the plurality of semiconductor apparatuses, which have completed the self-tests, from the first test board. Upon completion of the loading of the test software, the test software is loaded into test circuits of a plurality of semiconductor apparatuses on a second test board, while the self-tests are performed on the plurality of semiconductor apparatuses on the first test board.

Abstract translation: 一种用于测试多个半导体器件的方法，所述方法包括在第一测试板上安装多个半导体器件，其中所述多个半导体器件包括测试电路，将测试软件加载到测试电路中，通过使用测试电路 基于测试软件对多个半导体装置进行自检，并且从第一测试板去除完成了自检的多个半导体装置。 在完成测试软件的加载之后，在第一测试板上对多个半导体设备执行自检，将测试软件加载到第二测试板上的多个半导体设备的测试电路中。

公开(公告)号：US20130125682A1

公开(公告)日：2013-05-23

申请号：US13494664

申请日：2012-06-12

Applicant: Eun Sik Kim ,  Jeong Seon Min ,  Yong Lee ,  Yang Rae Cho ,  Sun Geun Kim

Inventor： Eun Sik Kim ,  Jeong Seon Min ,  Yong Lee ,  Yang Rae Cho ,  Sun Geun Kim

IPC: G05G1/40

CPC classification number: B60K26/021 ,  G05G1/30 ,  G05G5/03 ,  Y10T74/18576

Abstract: A pedal force adjusting apparatus for an accelerator pedal regulates a resilient force of a resilient member through movement of an upper carrier and a lower carrier due to rotation of a lead screw. Accordingly, a pedal force of a pedal arm can be easily regulated if necessary.

Abstract translation: 用于加速器踏板的踏板力调节装置通过由于导螺杆的旋转而通过上托架和下载架的移动来调节弹性构件的弹性力。 因此，如果需要，可以容易地调节踏板臂的踏板力。

公开(公告)号：US08315014B2

公开(公告)日：2012-11-20

申请号：US12123492

申请日：2008-05-20

Applicant: Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

Inventor： Joo-ho Lee ,  Kook-hyun Sunwoo ,  Eun-sik Kim ,  Kyoung-won Na ,  Sang-hun Lee

IPC: G11B5/127

CPC classification number: G11B5/33 ,  G11B5/1278 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3163

Abstract: Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

Abstract translation: 提供一种垂直磁记录头及其制造方法。 垂直磁记录头包括：主极，其包括向记录介质施加记录磁场的极尖;围绕主极的螺线管形状的线圈，以便在磁极处产生记录信息到记录介质的磁场 尖端和返回磁轭与主极一起形成用于记录磁场的磁路并围绕通过主极上方的线圈的一部分。 线圈通过主极以上的次数小于线圈通过主极以下的次数。