公开(公告)号：US20230395369A1

公开(公告)日：2023-12-07

申请号：US18169684

申请日：2023-02-15

申请人： Eugenus, Inc.

发明人： Sung-Hoon Jung ,  Niloy Mukherjee ,  Hee Seok Kim ,  Kyu Jin Choi ,  Moonsig Joo ,  Hae Young Kim ,  Yoshikazu Okuyama ,  Nariman Naghibolashrafi ,  Bunsen B. Nie ,  Somilkumar J. Rathi

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/0228 ,  H01L21/0254 ,  H01L21/02211 ,  C23C16/45527 ,  H01L21/28194 ,  C23C16/34

摘要： The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

公开(公告)号：US20230016016A1

公开(公告)日：2023-01-19

申请号：US17662517

申请日：2022-05-09

申请人： Eugenus, Inc.

发明人： Alex Finkelman ,  Somilkumar J. Rathi ,  Niloy Mukherjee

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/68

摘要： The disclosed technology generally relates to semiconductor processing and more particularly to placing a substrate in a semiconductor manufacturing equipment for processing, and to apparatuses for placing the substrate in the semiconductor manufacturing equipment. In one aspect, a method of calibrating a process position of a semiconductor substrate in a process chamber comprises securing a calibration substrate on a susceptor in a processing chamber under an open chamber condition using a securing device, wherein securing comprises preventing the substrate from sliding laterally on the susceptor by more than a predefined tolerance from a centered position relative to a susceptor center. The method additionally comprises subjecting the calibration substrate under a process condition different from the open chamber condition. The method additionally comprises transferring the calibration substrate from the susceptor using a robot arm. The method further comprises detecting a position of the calibration substrate and recording coordinates of the robot arm corresponding to the detected position of the calibration substrate. Detection can be conducted on the fly. The securing device can be removed prior to processing substrates.

公开(公告)号：US20220301929A1

公开(公告)日：2022-09-22

申请号：US17714973

申请日：2022-04-06

申请人： Eugenus, Inc.

发明人： Ajit Dhamdhere ,  Hae Young Kim ,  Hyunchol Cho ,  Bunsen B. Nie

IPC分类号： H01L21/768

摘要： The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

公开(公告)号：US20220154332A1

公开(公告)日：2022-05-19

申请号：US16952493

申请日：2020-11-19

申请人： Eugenus, Inc.

发明人： Alex Finkelman ,  Niloy Mukherjee ,  Miguel Saldana

IPC分类号： C23C16/448 ,  C23C16/455 ,  C23C16/54 ,  C23C16/52

摘要： The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

公开(公告)号：US20230151488A1

公开(公告)日：2023-05-18

申请号：US17847692

申请日：2022-06-23

申请人： Eugenus, Inc.

发明人： Vinayak Veer Vats ,  M. Ziaul Karim ,  Bo Seon Choi

IPC分类号： C23C16/455 ,  C23C16/34

CPC分类号： C23C16/45531 ,  C23C16/45565 ,  C23C16/34

摘要： A method for ALD coating of a substrate with a layer containing Ti, Si, N, wherein a reaction gas and then a flushing gas are introduced into a process chamber holding the substrate in a plurality of successive steps, each in one or more cycles, wherein TiN is deposited in a first step with a reaction gas containing Ti and a reaction gas containing N, TiSi is deposited in a second step with a reaction gas containing Ti and a reaction gas containing Si, and in a third step following the second step, TiSiN is deposited with a reaction gas containing Ti, with a reaction gas containing N and with a reaction gas containing Si.

公开(公告)号：US20220267898A1

公开(公告)日：2022-08-25

申请号：US17650649

申请日：2022-02-10

申请人： Eugenus, Inc.

发明人： Martin J. Salinas ,  Miguel Saldana ,  Victor Calderon ,  Santosh Narayan Ramachandra Kumar

IPC分类号： C23C16/34 ,  C23C16/455 ,  H01L21/02

摘要： The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a thin film deposition system comprises a thin film deposition chamber configured to deposit a thin film by alternatingly exposing a substrate to a plurality of precursors. The thin film system additionally comprises a precursor source connected to the thin film deposition chamber by a precursor delivery line, wherein the precursor delivery line comprises a high conductance line portion between the precursor source and a final valve outside of the thin film deposition chamber. The high conductance line portion is elongated in a flow direction and has a conductance that is at least four times greater than either of immediately adjacent low conductance line portions connected at opposing ends of the high conductance line portion. The thin film system further comprises a single final valve between the high conductance line portion and the thin film deposition chamber.

公开(公告)号：US11361992B2

公开(公告)日：2022-06-14

申请号：US16595916

申请日：2019-10-08

申请人： Eugenus, Inc.

发明人： Niloy Mukherjee ,  Hae Young Kim ,  Jerry Mack ,  Jae Seok Heo ,  Sung-Hoon Jung ,  Somilkumar J. Rathi ,  Srishti Chugh ,  Nariman Naghibolashrafi ,  Yoshikazu Okuyama ,  Bunsen B. Nie

IPC分类号： H01L21/768

摘要： The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

公开(公告)号：US20210125849A1

公开(公告)日：2021-04-29

申请号：US16661759

申请日：2019-10-23

申请人： Eugenus, Inc.

发明人： Alex Finkelman ,  Somilkumar J. Rathi ,  Niloy Mukherjee

IPC分类号： H01L21/67 ,  H01L21/68 ,  H01L21/687 ,  H01L21/677

摘要： The disclosed technology generally relates to semiconductor processing and more particularly to placing a substrate in a semiconductor manufacturing equipment for processing, and to apparatuses for placing the substrate in the semiconductor manufacturing equipment. In one aspect, a method of calibrating a process position of a semiconductor substrate in a process chamber comprises securing a calibration substrate on a susceptor in a processing chamber under an open chamber condition using a securing device, wherein securing comprises preventing the substrate from sliding laterally on the susceptor by more than a predefined tolerance from a centered position relative to a susceptor center. The method additionally comprises subjecting the calibration substrate under a process condition different from the open chamber condition. The method additionally comprises transferring the calibration substrate from the susceptor using a robot arm. The method further comprises detecting a position of the calibration substrate and recording coordinates of the robot arm corresponding to the detected position of the calibration substrate. Detection can be conducted on the fly. The securing device can be removed prior to processing substrates.

公开(公告)号：US20210104397A1

公开(公告)日：2021-04-08

申请号：US16595952

申请日：2019-10-08

申请人： Eugenus, Inc.

发明人： Sung-Hoon Jung ,  Niloy Mukherjee ,  Hee Seok Kim ,  Kyu Jin Choi ,  Moonsig Joo ,  Hae Young Kim ,  Yoshikazu Okuyama ,  Nariman Naghibolashrafi ,  Bunsen B. Nie ,  Somilkumar J. Rathi

IPC分类号： H01L21/02 ,  C23C16/455 ,  H01L21/28 ,  C23C16/34

摘要： The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

公开(公告)号：US20240276896A1

公开(公告)日：2024-08-15

申请号：US18488851

申请日：2023-10-17

申请人： Eugenus, Inc.

发明人： Jae Seok Heo ,  Jerry Mack ,  Somilkumar J. Rathi ,  Niloy Mukherjee

IPC分类号： H10N70/00 ,  H10B63/00

CPC分类号： H10N70/8413 ,  H10B63/24 ,  H10N70/826

摘要： The disclosed technology generally relates to a barrier layer comprising titanium silicon nitride, and more particularly to a barrier layer for nonvolatile memory devices, and methods of forming the same. In one aspect, a method of forming an electrode for a phase change memory device comprises forming over a semiconductor substrate an electrode comprising titanium silicon nitride (TiSiN) on a phase change storage element configured to store a memory state. Forming the electrode comprises exposing a semiconductor substrate to one or more cyclical vapor deposition cycles, wherein a plurality of the cyclical vapor deposition cycles comprises an exposure to a Ti precursor, an exposure to a N precursor and an exposure to a Si precursor.