公开(公告)号：US20230151488A1

公开(公告)日：2023-05-18

申请号：US17847692

申请日：2022-06-23

Applicant: Eugenus, Inc.

Inventor： Vinayak Veer Vats ,  M. Ziaul Karim ,  Bo Seon Choi

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45531 ,  C23C16/45565 ,  C23C16/34

Abstract: A method for ALD coating of a substrate with a layer containing Ti, Si, N, wherein a reaction gas and then a flushing gas are introduced into a process chamber holding the substrate in a plurality of successive steps, each in one or more cycles, wherein TiN is deposited in a first step with a reaction gas containing Ti and a reaction gas containing N, TiSi is deposited in a second step with a reaction gas containing Ti and a reaction gas containing Si, and in a third step following the second step, TiSiN is deposited with a reaction gas containing Ti, with a reaction gas containing N and with a reaction gas containing Si.

公开(公告)号：US11942365B2

公开(公告)日：2024-03-26

申请号：US15994848

申请日：2018-05-31

Applicant: EUGENUS, INC.

Inventor： Vinayak Veer Vats ,  M. Ziaul Karim ,  Bo Seon Choi ,  Somilkumar J. Rathi ,  Niloy Mukherjee

IPC: C23C16/42 ,  C23C16/34 ,  C23C16/455 ,  C23C28/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/7685 ,  C23C16/34 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45529 ,  C23C28/00 ,  C23C28/321 ,  C23C28/34 ,  C23C28/345 ,  C23C28/36 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76841 ,  H01L23/53266 ,  H01L21/76846

Abstract: The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

公开(公告)号：US20180350657A1

公开(公告)日：2018-12-06

申请号：US15994848

申请日：2018-05-31

Applicant: EUGENUS, INC.

Inventor： Vinayak Veer Vats ,  M. Ziaul Karim ,  Bo Seon Choi ,  Somilkumar J. Rathi ,  Niloy Mukherjee

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  C23C16/42 ,  C23C16/34 ,  C23C16/455

Abstract: The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.