公开(公告)号：US20110152541A1

公开(公告)日：2011-06-23

申请号：US12854949

申请日：2010-08-12

Applicant: Donghang YAN ,  Yanhou Geng ,  Hongkun Tian ,  Feng Pan ,  Lizhen Huang

Inventor： Donghang YAN ,  Yanhou Geng ,  Hongkun Tian ,  Feng Pan ,  Lizhen Huang

IPC: C07D333/76 ,  C07D495/04 ,  C07D409/14 ,  C07D333/10 ,  C07D409/04 ,  C07C25/18 ,  C07C25/22 ,  C07C13/54

CPC classification number: C07C15/30 ,  C07C15/14 ,  C07C2603/26 ,  C07D333/10 ,  C07D333/18 ,  C07D333/76 ,  C07D495/04 ,  H01L51/001

Abstract: The present invention relates to inducing layer materials for the preparation of weak epitaxial films of non-planar metal phthalocyanine. The characteristics of the inducing layer materials lies in that the said inducing layer materials replace benzene rings of sexiphenyl by conjugated aromatic group and to replace the hydrogen atoms of benzene rings at the two ends of sexiphenyl by fluorine atoms, thus the regulation of molecular interaction is finally realized by changing the size or the linearity degree of the conjugated aromatic groups, as well as by changing the polarity of the benzene ring at the two ends, consequently, the cell parameters of (001) crystal face of the new materials are different from that of sexiphenyl and to achieve a effect of inducing the weak epitaxy growth of non-planar metal-phthalocyanine.

Abstract translation: 本发明涉及用于制备非平面金属酞菁的弱外延膜的诱导层材料。 诱导层材料的特征在于，所述诱导层材料通过共轭芳族基团取代二苯基苯环，并且用氟原子代替二苯基两端的苯环的氢原子，因此分子相互作用的调节是 最终通过改变共轭芳族基团的大小或线性度，以及通过改变两端苯环的极性来实现，因此新材料（001）晶面的电池参数不同于 并且达到诱导非平面金属酞菁的弱外延生长的效果。

公开(公告)号：US10263206B2

公开(公告)日：2019-04-16

申请号：US11788957

申请日：2007-04-21

Applicant: Donghang Yan ,  Haibo Wang ,  Feng Zhu ,  Jianwu Shi ,  De Song

Inventor： Donghang Yan ,  Haibo Wang ,  Feng Zhu ,  Jianwu Shi ,  De Song

IPC: H01L51/00 ,  H01L51/42 ,  H01L51/05

Abstract: An organic semiconductor crystalline film and weak oriented epitaxy growth preparation method thereof. The organic semiconductor crystalline film is a n-type semiconductor or a p-type semiconductor, and organic semiconductor crystal molecules in the organic semiconductor crystalline film are oriented in a stand-up manner on the ordered substrate, and have an oriented relationship with the ordered substrate. The organic semiconductor crystalline film prepared by the present invention is useful for organic transistor and organic phototransistor devices. The method of the present invention can control the high carrier mobility direction of organic semiconductor crystals to have ordered orientation in the film, enhance contacts between crystals, improve mechanical strength and micro-machining property of the film, and give a high carrier mobility. The carrier mobility of weak oriented epitaxially grown film of the present invention is 0.32 cm2/Vs, which is 5 times as large as that of a vapor phase deposited film, and is similar to that of single crystal. The present invention is adapted to glass substrates and plastic substrates.

公开(公告)号：US06914258B2

公开(公告)日：2005-07-05

申请号：US10645642

申请日：2003-08-21

Applicant: Donghang Yan ,  Jun Wang ,  Jian Zhang

Inventor： Donghang Yan ,  Jun Wang ,  Jian Zhang

IPC: H01L51/05 ,  H01L29/786 ,  H01L35/24 ,  H01L51/00 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40 ,  H01L23/58

CPC classification number: H01L51/105 ,  H01L51/001 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/057 ,  H01L51/0583

Abstract: A field effect transistor in sandwiched configuration having organic semiconductor, comprising: a substrate (1), a gate electrode (2) formed on the surface of the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate insulation layer (2), which is characterized in that, further comprising: an active layer (4) formed on the gate insulation layer (3) but leaving a part of the gate insulation layer (3) to be exposed, a source and drain electrodes (5) formed on a part of the gate insulation layer (3) and a part of the active layer (4), and an active layer (6) formed on the exposed part of the gate insulation layer (3), the active layer (4), the source electrode and the drain electrode (5). Taking full advantage of that the organic semiconductor can be processed under low temperature, the present invention adopts two or more kinds of materials to form the active semiconductor layer to make the active layer good contact with the source/drain electrode more effectively and reduce the threshold voltage of the device, and contact the semiconductor with the source/drain electrode and the insulation layer closely and tightly.

Abstract translation: 1.一种具有有机半导体的夹层结构的场效应晶体管，包括：基板（1），形成在所述基板（1）的表面上的栅电极（2），形成在所述基板（1）上的栅极绝缘层（3） 和栅极绝缘层（2），其特征在于，还包括：形成在所述栅极绝缘层（3）上但使所述栅极绝缘层（3）的一部分露出的有源层（4）， 在栅极绝缘层（3）的一部分上形成的源极和漏极（5）和有源层（4）的一部分，以及形成在栅极绝缘层（3）的暴露部分上的有源层（6） ，有源层（4），源电极和漏电极（5）。 充分利用有机半导体可以在低温下进行加工，本发明采用两种或更多种材料形成有源半导体层，使活性层更有效地与源极/漏极接触良好，降低阈值 并且将源极/漏电极和绝缘层的半导体紧密接触。

公开(公告)号：US06847048B2

公开(公告)日：2005-01-25

申请号：US10618544

申请日：2003-07-11

Applicant: Donghang Yan ,  Jianfeng Yuan

Inventor： Donghang Yan ,  Jianfeng Yuan

IPC: H01L21/02 ,  H01L21/316 ,  H01L29/76 ,  H01L35/24 ,  H01L47/00 ,  H01L51/00 ,  H01L51/30

CPC classification number: H01L51/0529 ,  H01L21/31604 ,  H01L21/31691 ,  H01L28/56 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0545

Abstract: The present invention relates to an organic thin film transistor (OTFT) comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer formed on the gate electrode, a source electrode (5) and a drain electrode (6) formed on the gate insulation layer including a first insulation layer (3) and a second insulation layer (4) with different dielectric constants, and an active layer (7) which overlays the source electrode (5) and the drain electrode (6). Without adding the conventional complicated processes like photolithography but adding two simple processes of spin coating or vaporously coating the second insulation film and self-aligned dry RIE, the present invention not only can improve the carrier's injection property so as to improve the OTFT device's properties, but also can block the leakage current of the gate insulation layer and reduce the device's parasitic capacitance. Therefore, the material with high dielectric constant can be used as the insulation layer to increase the channel capacitance so as to reduce threshold voltage of the device and reduce the adverse effect of the leakage between the source and gate electrodes, the gate and drain electrodes.

Abstract translation: 本发明涉及一种有机薄膜晶体管（OTFT），包括：基板（1），形成在基板（1）上的栅电极（2），形成在栅电极上的栅绝缘层，源电极 ）和形成在栅极绝缘层上的漏电极（6），包括具有不同介电常数的第一绝缘层（3）和第二绝缘层（4），以及覆盖源电极（5）的有源层（7） 和漏电极（6）。 本发明不仅能够增加光刻技术的传统复杂工艺，而且还添加了旋转涂布或气相涂布第二绝缘膜和自对准干RIE的两个简单工艺，本发明不仅可以改善载体的注入性能，以提高OTFT器件的性能， 而且可以阻挡栅极绝缘层的漏电流并降低器件的寄生电容。 因此，可以使用具有高介电常数的材料作为绝缘层，以增加沟道电容，从而降低器件的阈值电压，并减少源极和栅极，栅极和漏极之间的泄漏的不利影响。

公开(公告)号：US20120153265A1

公开(公告)日：2012-06-21

申请号：US13187217

申请日：2011-07-20

Applicant: Donghang YAN ,  Yanhou Geng ,  Hongkun Tian ,  Lizhen Huang ,  Jianfeng Shen ,  Xiaodong Guo

Inventor： Donghang YAN ,  Yanhou Geng ,  Hongkun Tian ,  Lizhen Huang ,  Jianfeng Shen ,  Xiaodong Guo

IPC: H01L51/30 ,  B32B7/02 ,  C07C15/27 ,  C23C16/00 ,  C07D409/14 ,  C07D495/04 ,  B32B9/04 ,  C30B23/02

CPC classification number: C30B29/54 ,  C23C14/12 ,  C23C14/24 ,  C30B23/002 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0078 ,  H01L51/0545 ,  Y10T428/261 ,  Y10T428/265

Abstract: The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.

Abstract translation: 本发明涉及用于制备非平面酞菁的弱外延膜的固溶体诱导层和由固溶体诱导层和有机薄膜晶体管上的弱外延生长产生的非平面酞菁薄膜，基于 非平面酞菁的弱rpitaxy生长薄膜。 通过由式I和式II表示的任意两种诱导层分子的蒸气共沉积在一定的衬底温度下制备固溶体诱导层。 固溶体诱导层具有均匀的结构，通过调整组分比例可以控制晶格参数和电子结构，固溶体诱导层可以外延生长非平面酞菁的高质量薄膜，并制造高性能晶体管器件 基于这样的外延薄膜。

公开(公告)号：US20070262303A1

公开(公告)日：2007-11-15

申请号：US11788957

申请日：2007-04-21

Applicant: Donghang Yan ,  Haibo Wang ,  Feng Zhu ,  Jianwu Shi ,  De Song

Inventor： Donghang Yan ,  Haibo Wang ,  Feng Zhu ,  Jianwu Shi ,  De Song

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC classification number: H01L51/428 ,  H01L51/0012 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0545 ,  Y02E10/549

Abstract: An organic semiconductor crystalline film and weak oriented epitaxy growth preparation method thereof. The organic semiconductor crystalline film is a n-type semiconductor or a p-type semiconductor, and organic semiconductor crystal molecules in the organic semiconductor crystalline film are oriented in a stand-up manner on the ordered substrate, and have an oriented relationship with the ordered substrate. The organic semiconductor crystalline film prepared by the present invention is useful for organic transistor and organic phototransistor devices. The method of the present invention can control the high carrier mobility direction of organic semiconductor crystals to have ordered orientation in the film, enhance contacts between crystals, improve mechanical strength and micro-machining property of the film, and give a high carrier mobility. The carrier mobility of weak oriented epitaxially grown film of the present invention is 0.32 cm2/Vs, which is 5 times as large as that of a vapor phase deposited film, and is similar to that of single crystal. The present invention is adapted to glass substrates and plastic substrates.

Abstract translation: 一种有机半导体晶体膜及其弱取向外延生长的制备方法。 有机半导体结晶膜是n型半导体或p型半导体，有机半导体结晶膜中的有机半导体晶体分子以有序的基板上的立式取向，并且与有序半导体结晶膜具有定向关系 基质。 通过本发明制备的有机半导体晶体膜可用于有机晶体管和有机光电晶体管器件。 本发明的方法可以控制有机半导体晶体的高载流子迁移率方向在膜中具有有序取向，增强晶体之间的接触，提高膜的机械强度和微加工性能，并赋予高载流子迁移率。 本发明的弱取向外延生长膜的载流子迁移率为0.32cm 2 / Vs，为气相沉积膜的5倍，与单晶相似 。 本发明适用于玻璃基板和塑料基板。

公开(公告)号：US08598151B2

公开(公告)日：2013-12-03

申请号：US13187217

申请日：2011-07-20

Applicant: Donghang Yan ,  Yanhou Geng ,  Hongkun Tian ,  Lizhen Huang ,  Jianfeng Shen ,  Xiaodong Guo

Inventor： Donghang Yan ,  Yanhou Geng ,  Hongkun Tian ,  Lizhen Huang ,  Jianfeng Shen ,  Xiaodong Guo

IPC: A61K31/33 ,  C09B47/04

CPC classification number: C30B29/54 ,  C23C14/12 ,  C23C14/24 ,  C30B23/002 ,  H01L51/0068 ,  H01L51/0074 ,  H01L51/0078 ,  H01L51/0545 ,  Y10T428/261 ,  Y10T428/265

Abstract: The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.

Abstract translation: 本发明涉及用于制备非平面酞菁的弱外延膜的固溶体诱导层和由固溶体诱导层和有机薄膜晶体管上的弱外延生长产生的非平面酞菁薄膜，基于 非平面酞菁的弱rpitaxy生长薄膜。 通过由式I和式II表示的任意两种诱导层分子的蒸气共沉积在一定的衬底温度下制备固溶体诱导层。 固溶体诱导层具有均匀的结构，通过调整组分比例可以控制晶格参数和电子结构，固溶体诱导层可以外延生长非平面酞菁的高质量薄膜，并制造高性能晶体管器件 基于这样的外延薄膜。

公开(公告)号：US07871855B2

公开(公告)日：2011-01-18

申请号：US12009526

申请日：2008-01-17

Applicant: Donghang Yan ,  De Song ,  Feng Zhu ,  Bo Yu

Inventor： Donghang Yan ,  De Song ,  Feng Zhu ,  Bo Yu

IPC: H01L51/40

CPC classification number: H01L51/0078 ,  C09B47/045 ,  H01L51/0525 ,  H01L51/0545 ,  Y02P20/125

Abstract: This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Abstract translation: 本发明涉及轴向取代酞菁化合物作为有机薄膜晶体管的源极/漏极之间的半导体层的用途。 轴向取代酞菁化合物的中心配体是3价以上的原子，轴配体是可以与轴取代酞菁化合物的中心配体连接的氯，氟或氧。 可以使用气相沉积法从轴向取代的酞菁化合物在有机基材上制备高质量的结晶膜。 这些晶体膜具有载流子迁移率高，能级丰富，性能稳定，易于一体化处理。 有机薄膜晶体管的场效应迁移率和开/关比分别为0.01cm2 / Vs以上且高于105。

公开(公告)号：US20080177060A1

公开(公告)日：2008-07-24

申请号：US12009526

申请日：2008-01-17

Applicant: Donghang Yan ,  De Song ,  Feng Zhu ,  Bo Yu

Inventor： Donghang Yan ,  De Song ,  Feng Zhu ,  Bo Yu

IPC: C07D487/22 ,  H01L21/00

CPC classification number: H01L51/0078 ,  C09B47/045 ,  H01L51/0525 ,  H01L51/0545 ,  Y02P20/125

Abstract: This invention relates to the use of axial substituted phthalocyanine compound as a semiconductor layer between the source/drain electrodes of organic thin-film transistor. The centre ligand of the axial substituted phthalocyanine compound is an atom with 3 valences or higher, and the axial ligands are chlorine, fluorine, or oxygen which can be connected with the centre ligands of axial substituted phthalocyanine compounds. Crystalline Film with high quality can be prepared on an organic substrate from the axial substituted phthalocyanine compound using vapor deposition process. These crystalline films have high carrier mobility, rich energy level, and stable performances and are easy for integrated process. The field effect mobility and the on/off Ratio of the organic thin-film transistor are 0.01 cm2/Vs or more and higher than 105, respectively.

Abstract translation: 本发明涉及轴向取代酞菁化合物作为有机薄膜晶体管的源极/漏极之间的半导体层的用途。 轴向取代酞菁化合物的中心配体是3价以上的原子，轴配体是可以与轴取代酞菁化合物的中心配体连接的氯，氟或氧。 可以使用气相沉积法从轴向取代的酞菁化合物在有机基材上制备高质量的结晶膜。 这些晶体膜具有载流子迁移率高，能级丰富，性能稳定，易于一体化处理。 有机薄膜晶体管的场效应迁移率和开/关比分别为0.01cm 2 / Vs以上且高于10℃。

公开(公告)号：US20060231954A1

公开(公告)日：2006-10-19

申请号：US11217983

申请日：2005-09-01

Applicant: Donghang Yan ,  Haibo Wang ,  Jun Wang ,  Jiguang Dai ,  Xiaoxia Jiang ,  Xuanjun Yan

Inventor： Donghang Yan ,  Haibo Wang ,  Jun Wang ,  Jiguang Dai ,  Xiaoxia Jiang ,  Xuanjun Yan

IPC: H01L33/00

CPC classification number: H01L51/424 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0078 ,  H01L51/0083 ,  H01L51/0087 ,  H01L51/0092 ,  H01L51/0562 ,  H01L51/4253 ,  H01L51/441 ,  Y02E10/549

Abstract: This invention relates to electric contact materials comprising organic heterojunction for improving the contact of organic semiconductor and metal electrode. The electric contact materials comprising organic heterojunction are composed of electron-type organic semiconductors, hole-type organic semiconductors and heterojunctions made thereof. The invention further relates to the organic diode, organic FET and organic photovoltaic device using the electric contact materials comprising organic heterojunction as a buffer layer.

Abstract translation: 本发明涉及包含有机异质结的电接触材料，用于改善有机半导体和金属电极的接触。 包含有机异质结的电接触材料由电子型有机半导体，空穴型有机半导体和由其制成的异质结构成。 本发明还涉及使用包含有机异质结作为缓冲层的电接触材料的有机二极管，有机FET和有机光伏器件。