公开(公告)号：US09123388B2

公开(公告)日：2015-09-01

申请号：US13277332

申请日：2011-10-20

申请人： Min-shik Roh ,  Se-yoon Kim ,  Bo-won Hwang ,  Byung-yeob Park ,  Dong-ha Jung ,  Ji-won Jung ,  Min-seok Ha

发明人： Min-shik Roh ,  Se-yoon Kim ,  Bo-won Hwang ,  Byung-yeob Park ,  Dong-ha Jung ,  Ji-won Jung ,  Min-seok Ha

IPC分类号： G11B33/14 ,  G11B17/056

CPC分类号： G11B33/1486 ,  G11B17/056 ,  G11B33/148

摘要： A disk drive that includes a noise reduction unit, and a method of reducing noise by using the disk drive. The disk drive includes a main chassis; a tray operatively coupled to the main chassis such that the tray is slidable relative to the main chassis, the tray including a disk accommodation portion configured to accommodate a storage medium such that the storage medium is rotatable relative to the disk accommodation portion; and a noise reduction unit configured to reduce a pressure concentration on an end portion of the storage medium as the storage medium rotates to reduce noise.

摘要翻译： 一种包括降噪单元的磁盘驱动器，以及通过使用磁盘驱动器来降低噪声的方法。 磁盘驱动器包括主机箱; 托盘，其可操作地联接到所述主机架，使得所述托盘相对于所述主机架可滑动，所述托盘包括盘容纳部分，所述盘容纳部分构造成容纳存储介质，使得所述存储介质可相对于所述盘容纳部分旋转; 以及噪声降低单元，被配置为当存储介质旋转以减小存储介质的端部上的压力浓度以降低噪声。

公开(公告)号：US08159069B2

公开(公告)日：2012-04-17

申请号：US12940521

申请日：2010-11-05

申请人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

发明人： Baek Mann Kim ,  Seung Jin Yeom ,  Dong Ha Jung ,  Jeong Tae Kim

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76856

摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

摘要翻译： 金属线包括形成在半导体衬底上的下金属线。 在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。 在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。 在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

公开(公告)号：US08053895B2

公开(公告)日：2011-11-08

申请号：US12486454

申请日：2009-06-17

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Nam Yeal Lee

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Nam Yeal Lee

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76856 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a multi-layered structure that includes an MoB2 layer, an MoxByNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层具有金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层。 扩散阻挡层包括包含MoB 2层，MoxByNz层和Mo层的多层结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开(公告)号：US20110233781A1

公开(公告)日：2011-09-29

申请号：US13152665

申请日：2011-06-03

申请人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Mann KIM ,  Young Jin LEE ,  Jeong Tae KIM

发明人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Mann KIM ,  Young Jin LEE ,  Jeong Tae KIM

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

摘要翻译： 半导体器件中的金属线包括形成在半导体衬底上的绝缘层。 在绝缘层中形成金属线形成区域。 形成金属线以填充绝缘层的金属线形成区域。 并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。 无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

公开(公告)号：US07977793B2

公开(公告)日：2011-07-12

申请号：US11939666

申请日：2007-11-14

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

摘要翻译： 半导体器件中的金属线包括形成在半导体衬底上的绝缘层。 在绝缘层中形成金属线形成区域。 形成金属线以填充绝缘层的金属线形成区域。 并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。 无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

公开(公告)号：US20110053370A1

公开(公告)日：2011-03-03

申请号：US12940521

申请日：2010-11-05

申请人： Baek Mann KIM ,  Seung Jin YEOM ,  Dong Ha JUNG ,  Jeong Tae KIM

发明人： Baek Mann KIM ,  Seung Jin YEOM ,  Dong Ha JUNG ,  Jeong Tae KIM

IPC分类号： H01L21/283

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76856

摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W-N-B ternary layer, and a Ti-N-B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

摘要翻译： 金属线包括形成在半导体衬底上的下金属线。 在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。 在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。 在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

公开(公告)号：US07875979B2

公开(公告)日：2011-01-25

申请号：US12619147

申请日：2009-11-16

申请人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

发明人： Dong Ha Jung ,  Seung Jin Yeom ,  Baek Mann Kim ,  Young Jin Lee ,  Jeong Tae Kim

IPC分类号： H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.

摘要翻译： 描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层形成有金属线形成区域。 随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。 最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

公开(公告)号：US20100059890A1

公开(公告)日：2010-03-11

申请号：US12619147

申请日：2009-11-16

申请人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Mann KIM ,  Young Jin LEE ,  Jeong Tae KIM

发明人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Mann KIM ,  Young Jin LEE ,  Jeong Tae KIM

IPC分类号： H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.

摘要翻译： 描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层形成有金属线形成区域。 随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。 最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

公开(公告)号：US20100052169A1

公开(公告)日：2010-03-04

申请号：US12486124

申请日：2009-06-17

申请人： Nam Yeal LEE ,  Seung Jin YEOM ,  Baek Mann KIM ,  Dong Ha JUNG ,  Joon Seok OH

发明人： Nam Yeal LEE ,  Seung Jin YEOM ,  Baek Mann KIM ,  Dong Ha JUNG ,  Joon Seok OH

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.

摘要翻译： 在半导体基板上形成绝缘层，以限定金属线形成区域。 在金属线形成区域的表面上形成具有Mox1Si1-x1层，Mox2Siy2Nz2层和Moy3N1-y3层的多层结构的扩散阻挡层。 在扩散阻挡层上形成金属层，以填充绝缘层的金属线形成区域。

公开(公告)号：US20100052168A1

公开(公告)日：2010-03-04

申请号：US12485473

申请日：2009-06-16

申请人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Man KIM ,  Joon Seok OH ,  Nam Yeal LEE

发明人： Dong Ha JUNG ,  Seung Jin YEOM ,  Baek Man KIM ,  Joon Seok OH ,  Nam Yeal LEE

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53238 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76858 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VB2 layer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.

摘要翻译： 在所得半导体器件中具有多层扩散层的金属线与其形成方法相对应。 金属线包括绝缘层，多层扩散阻挡层和金属层。 绝缘层形成在半导体衬底上并具有金属线形成区域。 多层扩散阻挡层形成在绝缘层中形成的金属线形成区域的表面上。 扩散阻挡层包括VB2层，CrV层和Cr层。 金属层形成在扩散阻挡层上，其基本上填充在绝缘层的金属线形成区域中，以最终形成金属线。