Invention Grant
- Patent Title: Metal line of semiconductor device having a multilayer molybdenum diffusion barrier and method for forming the same
- Patent Title (中): 具有多层钼扩散阻挡层的半导体器件的金属线及其形成方法
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Application No.: US12486454Application Date: 2009-06-17
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Publication No.: US08053895B2Publication Date: 2011-11-08
- Inventor: Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Nam Yeal Lee
- Applicant: Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Nam Yeal Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0085396 20080829
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a multi-layered structure that includes an MoB2 layer, an MoxByNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
Public/Granted literature
- US20100052170A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME Public/Granted day:2010-03-04
Information query
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