公开(公告)号：US20100099266A1

公开(公告)日：2010-04-22

申请号：US12563526

申请日：2009-09-21

申请人： Manfred Oswald ,  Jivko Dinev ,  Jan Rupf ,  Markus Meye ,  Francesco Maletta ,  Uwe Leucke ,  Ron Tilger ,  Farid Abooameri ,  Alexander Matyushkin ,  Denis Koosau ,  Xiaoping Zhou ,  Thorsten Lehmann ,  Declan Scanlan

发明人： Manfred Oswald ,  Jivko Dinev ,  Jan Rupf ,  Markus Meye ,  Francesco Maletta ,  Uwe Leucke ,  Ron Tilger ,  Farid Abooameri ,  Alexander Matyushkin ,  Denis Koosau ,  Xiaoping Zhou ,  Thorsten Lehmann ,  Declan Scanlan

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32045 ,  H01J37/32009 ,  H01J2237/334

摘要： Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixture of the reactor, maintaining a plasma formed from the gas mixture, wherein bias power and RF power provided the reactor are pulsed, and etching the silicon layer in the presence of the plasma.

摘要翻译： 本发明的实施例提供一种能够等离子体蚀刻高纵横比特征的方法和装置。 在一个实施例中，提供了一种用于蚀刻的方法，其包括提供具有设置在蚀刻反应器中的硅层上的图案化掩模的衬底，提供反应器的气体混合物，保持由气体混合物形成的等离子体，其中偏置功率和 RF电源提供反应器是脉冲的，并且在存在等离子体的情况下蚀刻硅层。

公开(公告)号：US08475625B2

公开(公告)日：2013-07-02

申请号：US11381523

申请日：2006-05-03

申请人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly A. McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David E. Gutierrez ,  Jim Zhongyi He ,  Robert S. Clark ,  Dennis M. Koosau ,  Jeffrey William Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John P. Holland ,  Alexander Paterson

发明人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly A. McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David E. Gutierrez ,  Jim Zhongyi He ,  Robert S. Clark ,  Dennis M. Koosau ,  Jeffrey William Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John P. Holland ,  Alexander Paterson

IPC分类号： H01L21/3065

CPC分类号： H01J37/3266 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/3347

摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

公开(公告)号：US20070256785A1

公开(公告)日：2007-11-08

申请号：US11381523

申请日：2006-05-03

申请人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David Gutierrez ,  Jim He ,  Robert Clark ,  Dennis Koosau ,  Jeffrey Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John Holland ,  Alexander Paterson

发明人： Sharma Pamarthy ,  Huutri Dao ,  Xiaoping Zhou ,  Kelly McDonough ,  Jivko Dinev ,  Farid Abooameri ,  David Gutierrez ,  Jim He ,  Robert Clark ,  Dennis Koosau ,  Jeffrey Dietz ,  Declan Scanlan ,  Subhash Deshmukh ,  John Holland ,  Alexander Paterson

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01J37/3266 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/3347

摘要： Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.