公开(公告)号：US08226769B2

公开(公告)日：2012-07-24

申请号：US11740869

申请日：2007-04-26

申请人： Alexander Matyushkin ,  Dennis Koosau ,  Theodoros Panagopoulos ,  John Holland

发明人： Alexander Matyushkin ,  Dennis Koosau ,  Theodoros Panagopoulos ,  John Holland

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/306 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

摘要： An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

摘要翻译： 用于在衬底处理室中接收衬底的静电吸盘包括具有衬底接收表面的陶瓷圆盘和具有多个间隔开的台面的相对的背面。 将电极嵌入陶瓷盘中以产生静电力以保持基板。 位于陶瓷圆盘的周边部分和中心部分的加热线圈允许独立地控制陶瓷盘的中心部分和周边部分的温度。 卡盘由具有保留空气的凹槽的基座支撑。 卡盘和底座也可以有一个上覆边缘环和夹环。

公开(公告)号：US07645357B2

公开(公告)日：2010-01-12

申请号：US11410697

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin N. Todorow ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  H01L19/00 ,  H05B31/26

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20070247073A1

公开(公告)日：2007-10-25

申请号：US11410697

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： H01J7/24

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator that includes a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 一种用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板 （b）工件支撑件，以及耦合到电容耦合的源功率施加器的不同固定频率的多个甚高频发电机，以及用于独立地控制多个VHF发生器的功率输出电平的控制器，以便控制施加到 源极电极。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US07436645B2

公开(公告)日：2008-10-14

申请号：US11531474

申请日：2006-09-13

申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US20080017104A1

公开(公告)日：2008-01-24

申请号：US11778019

申请日：2007-07-14

申请人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

发明人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

IPC分类号： B05C11/00 ,  B05B5/025

CPC分类号： H05B3/0047 ,  B05C13/00 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

摘要： A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

摘要翻译： 基板处理室包括静电卡盘，该静电卡盘包括具有基板接收表面和相对的背面的陶瓷盘。 在一个版本中，陶瓷盘包括小于7mm的厚度。 电极嵌入陶瓷盘中以产生静电力来保持基板，并且陶瓷盘中的加热器线圈允许独立控制在不同加热区域的温度。 冷却器为陶瓷盘下方的底座中的冷却剂通道提供冷却剂。 控制器包括温度控制指令集，其将冷却器内的冷却剂温度设定为在施加到加热器的功率水平上升或下降之前。

公开(公告)号：US20070245960A1

公开(公告)日：2007-10-25

申请号：US11410773

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32137 ,  H01J37/32091 ,  H01J37/321

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the chamber at a level that provides the desired plasma ion density. Chemical species distribution or content in the process region plasma is controlled by adjusting the ratio between the amounts of the capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method further includes applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入室中，将VHF等离子体源功率电容耦合到层叠在晶片上的室的处理区域，同时将RF等离子体源功率感应耦合到工艺区域 。 通过将等离子体源功率的总量以感应和电容耦合到腔室中的水平提供期望的等离子体离子密度来建立特定的等离子体离子密度水平。 通过调节电容耦合功率和电感耦合功率之间的比例来控制处理区域等离子体中的化学物质分布或含量，同时继续保持总等离子体源功率的水平。 该方法还包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处的离子能量的平均值和总体分布。

公开(公告)号：US20070139856A1

公开(公告)日：2007-06-21

申请号：US11531474

申请日：2006-09-13

申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US20100099266A1

公开(公告)日：2010-04-22

申请号：US12563526

申请日：2009-09-21

申请人： Manfred Oswald ,  Jivko Dinev ,  Jan Rupf ,  Markus Meye ,  Francesco Maletta ,  Uwe Leucke ,  Ron Tilger ,  Farid Abooameri ,  Alexander Matyushkin ,  Denis Koosau ,  Xiaoping Zhou ,  Thorsten Lehmann ,  Declan Scanlan

发明人： Manfred Oswald ,  Jivko Dinev ,  Jan Rupf ,  Markus Meye ,  Francesco Maletta ,  Uwe Leucke ,  Ron Tilger ,  Farid Abooameri ,  Alexander Matyushkin ,  Denis Koosau ,  Xiaoping Zhou ,  Thorsten Lehmann ,  Declan Scanlan

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32045 ,  H01J37/32009 ,  H01J2237/334

摘要： Embodiments of the invention provide a method and apparatus that enables plasma etching of high aspect ratio features. In one embodiment, a method for etching is provided that includes providing a substrate having a patterned mask disposed on a silicon layer in an etch reactor, providing a gas mixture of the reactor, maintaining a plasma formed from the gas mixture, wherein bias power and RF power provided the reactor are pulsed, and etching the silicon layer in the presence of the plasma.

摘要翻译： 本发明的实施例提供一种能够等离子体蚀刻高纵横比特征的方法和装置。 在一个实施例中，提供了一种用于蚀刻的方法，其包括提供具有设置在蚀刻反应器中的硅层上的图案化掩模的衬底，提供反应器的气体混合物，保持由气体混合物形成的等离子体，其中偏置功率和 RF电源提供反应器是脉冲的，并且在存在等离子体的情况下蚀刻硅层。

公开(公告)号：US20070258186A1

公开(公告)日：2007-11-08

申请号：US11740869

申请日：2007-04-26

申请人： Alexander Matyushkin ,  Dennis Koosau ,  Theodoros Panagopoulos ,  John Holland

发明人： Alexander Matyushkin ,  Dennis Koosau ,  Theodoros Panagopoulos ,  John Holland

IPC分类号： H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

摘要： An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

摘要翻译： 用于在衬底处理室中接收衬底的静电吸盘包括具有衬底接收表面的陶瓷圆盘和具有多个间隔开的台面的相对的背面。 将电极嵌入陶瓷盘中以产生静电力以保持基板。 位于陶瓷圆盘的周边部分和中心部分的加热线圈允许独立地控制陶瓷盘的中心部分和周边部分的温度。 卡盘由具有保留空气的凹槽的基座支撑。 卡盘和底座也可以有一个上覆边缘环和夹环。

公开(公告)号：US20070245961A1

公开(公告)日：2007-10-25

申请号：US11410781

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling dissociation of species in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并通过控制VHF源功率的有效频率来控制处理区域中物种的离解。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。