- 专利标题： Apparatus for etching high aspect ratio features
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申请号： US11381523申请日： 2006-05-03
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公开(公告)号： US08475625B2公开(公告)日： 2013-07-02
- 发明人: Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
- 申请人： Sharma Pamarthy , Huutri Dao , Xiaoping Zhou , Kelly A. McDonough , Jivko Dinev , Farid Abooameri , David E. Gutierrez , Jim Zhongyi He , Robert S. Clark , Dennis M. Koosau , Jeffrey William Dietz , Declan Scanlan , Subhash Deshmukh , John P. Holland , Alexander Paterson
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.
公开/授权文献
- US20070256785A1 APPARATUS FOR ETCHING HIGH ASPECT RATIO FEATURES 公开/授权日：2007-11-08
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