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公开(公告)号：US20080207001A1
公开(公告)日：2008-08-28
申请号：US12064370
申请日：2006-08-23
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/67109
摘要： In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
摘要翻译： 在蒸气蚀刻的装置和方法中，待蚀刻的样品（S）位于主室（107）中，从其中抽空空气。 蚀刻气体在第一时间段内输入主室（107）。 之后，从主室107排出蚀刻气体，第二时间将冷却/净化气体输入主室。 之后，从主室（107）排出冷却/净化气体。 期望的是，将蚀刻气体输入到主室（107）中一段时间的步骤，从主室排出蚀刻气体，将冷却/净化气体输入到主室（107）的第二时段 重复时间，并从主室排出冷却/净化气体，直到样品已经被蚀刻到期望的程度。
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2.发明授权公开(公告)号：US08703003B2
公开(公告)日：2014-04-22
申请号：US12763635
申请日：2010-04-20
CPC分类号： H01L21/32135 , B81C1/00595 , B81C2201/0132 , B81C2201/0138 , H01L21/3065 , H01L21/67017
摘要： In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.
摘要翻译： 在蒸气蚀刻的方法中，包括在与第三层顶部接触并与第三层接触的第二层顶部并与之接触的第一层的样品，其中至少第一层和第二层由不同的材料组成。 在第一工艺条件下，通过蒸气蚀刻剂对样品进行蚀刻，使第一层的至少一部分被完全除去，同时留下第三层，而第二层位于第一层的被除去的部分基本上未被蚀刻。 然后在第二工艺条件下，通过相同或不同的蒸气蚀刻剂对样品进行蚀刻，这导致通过去除第一层的至少部分而被除去的第二层的至少部分被完全去除，同时留下第三层 第二层的去除部分基本上未被蚀刻。
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公开(公告)号：US08377253B2
公开(公告)日：2013-02-19
申请号：US12632029
申请日：2009-12-07
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/67109
摘要： In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber 107 from which the atmosphere inside is evacuated. Etching gas is input into the main chamber 107 for a first period of time. Thereafter, the etching gas is evacuated from the main chamber 107 and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber 107. Desirably, the steps of inputting the etching gas into the main chamber 107 for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber 107 for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
摘要翻译： 在蒸气蚀刻的装置和方法中，要蚀刻的样品（S）位于主室107中，其中内部的气氛从中抽出。 蚀刻气体在第一时间段内被输入到主室107中。 此后，从主室107排出蚀刻气体，并将冷却/净化气体输入主室第二时间间隔。 此后，冷却/净化气体从主室107排出。理想的是，将腐蚀气体输入到主室107中第一阶段的步骤，从主室抽空蚀刻气体，输入冷却/清洗 气体进入主室107第二时间段，并且从主室抽出冷却/净化气体，直到样品被蚀刻到期望的程度。
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公开(公告)号：US20100126963A9
公开(公告)日：2010-05-27
申请号：US12095626
申请日：2006-11-30
CPC分类号： H01L21/3065
摘要： In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
摘要翻译： 在刻蚀设置在蚀刻室中的样品的系统和方法中，将多个单独存储的蚀刻气体的电荷一次一个地放入样品蚀刻室中。 发生每次蚀刻气体的放电，使得在另一次蚀刻气体的开始放电时，在一次电荷的蚀刻气体的末端放电中存在瞬间重叠，由此保持蚀刻气体进入蚀刻室的所需流动。 在一次蚀刻气体的放电期间，对先前放电的蚀刻气体进行充电。 在至少一次蚀刻气体的放电期间，一次一个地排出多个单独存储的蚀刻气体的电荷并且对至少一个预先排出的蚀刻气体的电荷进行再充电的过程继续，直到样品被蚀刻到 期望程度
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公开(公告)号：US20100084094A1
公开(公告)日：2010-04-08
申请号：US12632029
申请日：2009-12-07
IPC分类号： H01L21/306
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/67109
摘要： In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber 107 from which the atmosphere inside is evacuated. Etching gas is input into the main chamber 107 for a first period of time. Thereafter, the etching gas is evacuated from the main chamber 107 and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber 107. Desirably, the steps of inputting the etching gas into the main chamber 107 for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber 107 for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
摘要翻译： 在蒸气蚀刻的装置和方法中，要蚀刻的样品（S）位于主室107中，其中内部的气氛从中抽出。 蚀刻气体在第一时间段内被输入到主室107中。 此后，从主室107排出蚀刻气体，并将冷却/净化气体输入主室第二时间间隔。 此后，冷却/净化气体从主室107排出。理想的是，将腐蚀气体输入到主室107中第一阶段的步骤，从主室抽空蚀刻气体，输入冷却/清洗 气体进入主室107第二时间段，并且从主室抽出冷却/净化气体，直到样品被蚀刻到期望的程度。
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公开(公告)号：US07638435B2
公开(公告)日：2009-12-29
申请号：US12064370
申请日：2006-08-23
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/67109
摘要： In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.
摘要翻译： 在蒸气蚀刻的装置和方法中，待蚀刻的样品（S）位于主室（107）中，从其中抽空空气。 蚀刻气体在第一时间段内输入主室（107）。 之后，从主室107排出蚀刻气体，第二时间将冷却/净化气体输入主室。 之后，从主室（107）排出冷却/净化气体。 期望的是，将蚀刻气体输入到主室（107）中一段时间的步骤，从主室排出蚀刻气体，将冷却/净化气体输入到主室（107）的第二时段 重复时间，并从主室排出冷却/净化气体，直到样品已经被蚀刻到期望的程度。
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公开(公告)号：US20090007281A1
公开(公告)日：2009-01-01
申请号：US12160672
申请日：2007-01-16
申请人： Roger Alan Renne , Kyeonghee Monica Lee , Katrina Marie Waters , Quanxin Meng , David L. Springer , Sam Jens Harbo , Katherine M. Gideon , Joel G. Pounds , Herbert S. Bresler , Don S. Daly
发明人： Roger Alan Renne , Kyeonghee Monica Lee , Katrina Marie Waters , Quanxin Meng , David L. Springer , Sam Jens Harbo , Katherine M. Gideon , Joel G. Pounds , Herbert S. Bresler , Don S. Daly
IPC分类号： A01K67/027 , A01K67/02 , C12Q1/68 , A61K38/19 , C12N5/06
CPC分类号： G01N33/6893 , A61K49/0008 , C12Q1/6883 , C12Q2600/142 , C12Q2600/158 , G01N2800/122 , G01N2800/52
摘要： Methods of diagnosis, markers, and screening techniques and animal models for assessing the severity and/or progression or regression of chronic obstructive pulmonary disease (COPD) and COPD-related diseases are disclosed.
摘要翻译： 公开了用于评估慢性阻塞性肺疾病（COPD）和COPD相关疾病的严重性和/或进展或消退的诊断方法，标志物和筛选技术和动物模型。
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公开(公告)号：US08257602B2
公开(公告)日：2012-09-04
申请号：US12095626
申请日：2006-11-30
CPC分类号： H01L21/3065
摘要： In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
摘要翻译： 在刻蚀设置在蚀刻室中的样品的系统和方法中，将多个单独存储的蚀刻气体的电荷一次一个地放入样品蚀刻室中。 发生每次蚀刻气体的放电，使得在另一次蚀刻气体的开始放电时，在一次电荷的蚀刻气体的末端放电中存在瞬间重叠，由此保持蚀刻气体进入蚀刻室的所需流动。 在一次蚀刻气体的放电期间，对先前放电的蚀刻气体进行充电。 在至少一次蚀刻气体的放电期间，一次一个地排出多个单独存储的蚀刻气体的电荷并且对至少一个预先排出的蚀刻气体的电荷进行再充电的过程继续，直到样品被蚀刻到 期望程度
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公开(公告)号：US20090065477A1
公开(公告)日：2009-03-12
申请号：US12095626
申请日：2006-11-30
CPC分类号： H01L21/3065
摘要： In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
摘要翻译： 在刻蚀设置在蚀刻室中的样品的系统和方法中，将多个单独存储的蚀刻气体的电荷一次一个地放入样品蚀刻室中。 发生每次蚀刻气体的放电，使得在另一次蚀刻气体的开始放电时，在一次电荷的蚀刻气体的末端放电中存在瞬间重叠，由此保持蚀刻气体进入蚀刻室的所需流动。 在一次蚀刻气体的放电期间，对先前放电的蚀刻气体进行充电。 在至少一次蚀刻气体的放电期间，一次一个地排出多个单独存储的蚀刻气体的电荷并且对至少一个预先排出的蚀刻气体的电荷进行再充电的过程继续，直到样品被蚀刻到 期望程度
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公开(公告)号：US20120244715A1
公开(公告)日：2012-09-27
申请号：US13512634
申请日：2010-12-02
申请人： Kyle S. Lebouitz , Andrew David Johnson , Eugene Karwacki, JR. , Suhas Narayan Ketkar , John Neumann , David L. Springer
发明人： Kyle S. Lebouitz , Andrew David Johnson , Eugene Karwacki, JR. , Suhas Narayan Ketkar , John Neumann , David L. Springer
IPC分类号： H01L21/306 , B05C11/10 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/32135
摘要： In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material.
摘要翻译： 在用于蒸气蚀刻的方法和系统中，将要蚀刻的材料和耐蚀刻材料放置在蚀刻室中。 此后，将蚀刻室中的压力调节到期望的压力，并将衬底暴露于蚀刻气体和包含氧的气体。 曝光基本上选择性地蚀刻待蚀刻的材料，同时基本上避免蚀刻抗蚀刻材料。
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