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    MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING
    4.
    发明申请
    MONOLITHIC ALUMINUM ALLOY TARGET AND METHOD OF MANUFACTURING 有权
    单晶铝合金靶和制造方法

    公开(公告)号：US20110056828A1

    公开(公告)日：2011-03-10

    申请号：US12736311

    申请日：2010-01-06

    申请人： Weifang Miao ,  David B. Smathers ,  Robert S. Bailey

    发明人： Weifang Miao ,  David B. Smathers ,  Robert S. Bailey

    IPC分类号： C23C14/34 ,  C22F1/04

    CPC分类号： C23C14/3407 ,  B21C23/001 ,  B21J1/04 ,  B21J1/06 ,  C22C21/00 ,  C22F1/04 ,  C23C14/3414

    摘要： Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.

    摘要翻译： 提供铝或铝合金溅射靶及其制造方法。 对纯铝或铝合金进行机械加工以产生圆形坯料，然后将坯料进行再结晶退火，以获得所需的晶粒尺寸和晶体织构。 在退火之后向坯料步骤提供10-50％的附加应变以增加机械强度。 此外，在靶的凸缘区域中，应变大于在其他目标区域中的应变，其中凸缘区域中的应变以约20-60％应变的速率施加。 然后将坯料完成以形成具有所需晶体学结构和足够的机械强度的溅射靶。

    Variable thickness plate for forming variable wall thickness physical vapor deposition target
    5.
    发明授权
    Variable thickness plate for forming variable wall thickness physical vapor deposition target 失效
    用于形成可变壁厚物理气相沉积靶的可变厚度板

    公开(公告)号：US07708868B2

    公开(公告)日：2010-05-04

    申请号：US11443232

    申请日：2006-05-30

    申请人： David B. Smathers ,  Melvin K. Holcomb ,  Eric Land

    发明人： David B. Smathers ,  Melvin K. Holcomb ,  Eric Land

    IPC分类号： B23K20/00 ,  B21D22/16 ,  C23C14/32

    CPC分类号： C23C14/3407 ,  H01J37/3423 ,  H01J37/3491

    摘要： A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.

    摘要翻译： 一种可变厚度溅射靶，其在战略位置增加目标材料厚度，以大大提高每个靶材的可用晶片的产量，以及制造这种靶材的方法，包括形成大致平坦且圆形的靶坯料，使得顶部之间的厚度尺寸 并且底面随目标空白半径的函数而减小。 然后将可变厚度目标坯料形成为具有底部和侧壁部分的可变厚度的圆顶形目标构件，其中所述可变厚度的圆顶形目标构件的壁厚在所述底部的中心部分附近最厚。 在本发明的一个实施例中，可变厚度目标坯料通过用加盖辊轧制（或压缩）目标坯料来形成，以获得可变厚度目标坯料。

    Non-planar sputter targets having crystlallographic orientations promoting uniform deposition
    6.
    发明申请
    Non-planar sputter targets having crystlallographic orientations promoting uniform deposition 失效
    具有促进均匀沉积的结晶取向的非平面溅射靶

    公开(公告)号：US20090235709A1

    公开(公告)日：2009-09-24

    申请号：US12455159

    申请日：2009-05-29

    申请人： Robert S. Bailey ,  Melvin K. Holcomb ,  David B. Smathers ,  Timothy Wiemels

    发明人： Robert S. Bailey ,  Melvin K. Holcomb ,  David B. Smathers ,  Timothy Wiemels

    IPC分类号： B21D26/02

    CPC分类号： C23C14/3407 ,  C23C14/3414 ,  H01J37/34 ,  H01J37/3426 ,  Y10T29/49805

    摘要： A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

    摘要翻译： 在溅射靶表面的部分中具有不同结晶取向的非平面溅射靶，其促进从目标表面溅射到衬底上的材料的更理想的沉积和密度图案。 溅射靶的闭合圆顶端由第一结晶取向组成，溅射靶的侧壁由不同于圆顶的晶体取向组成。 优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。 液压成形操作导致不同的晶体取向，同时最小化或理想地省略了热的应用。 因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。