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    METHODS FOR MANUFACTURING A SUPERCONDUCTOR
    1.
    发明公开
    METHODS FOR MANUFACTURING A SUPERCONDUCTOR 审中-公开

    公开(公告)号：US20230215604A1

    公开(公告)日：2023-07-06

    申请号：US18183913

    申请日：2023-03-14

    申请人： LUVATA WATERBURY, INC.

    发明人： Taeyoung PYON ,  Antti KILPINEN

    IPC分类号： H10N60/01 ,  H01B12/10

    CPC分类号： H10N60/0128 ,  H10N60/0184 ,  H01B12/10

    摘要： A method for manufacturing a superconductor is described. A metal assembly precursor can be formed within a hollow copper support element. Forming the metal assembly precursor within a hollow copper support element by positioning a plurality of conductor elements about a core including Sn to provide a first plurality of inner interstitial spaces between the plurality of conductor elements between the core and conductor elements and a second plurality of outer interstitial spaces between the hollow copper support element and the core, the plurality of conductor elements including unreacted Nb. The metal assembly precursor can be reduced via cold drawing to produce a reduced metal assembly. The reduced metal assembly can be reaction heat treated so that the unreacted Nb undergoes a phase transformation to a reacted superconductor.

    Precursor for use in manufacturing superconducting wire, production method of precursor, and superconducting wire
    2.
    发明授权
    Precursor for use in manufacturing superconducting wire, production method of precursor, and superconducting wire 有权

    公开(公告)号：US12102015B2

    公开(公告)日：2024-09-24

    申请号：US17284964

    申请日：2019-10-25

    申请人： Kobe Steel, Ltd.

    发明人： Shinya Kawashima ,  Takao Kawarada

    IPC分类号： H10N60/01

    CPC分类号： H10N60/0772 ,  H10N60/0184

    摘要： A precursor, which is a drawn wire product of a composite pipe, the composite pipe having: a composite wire group; a barrier layer; and a protective layer, wherein the composite wire group has: a plurality of tin wires each having at least one tin core being made of tin or a tin alloy, and a copper matrix which surrounds the at least one tin core; and a plurality of niobium wires each having a plurality of niobium cores being made of niobium or a niobium alloy, and a copper matrix which surrounds the plurality of niobium cores, the plurality of niobium wires being disposed such that each of the tin wires is surrounded by the niobium wires, the composite wire group contains titanium in an amount of from 0.38% by mass to 0.55% by mass.

    Methods for manufacturing a superconductor
    3.
    发明授权
    Methods for manufacturing a superconductor 有权

    公开(公告)号：US11990251B2

    公开(公告)日：2024-05-21

    申请号：US18183913

    申请日：2023-03-14

    申请人： LUVATA WATERBURY, INC.

    发明人： Taeyoung Pyon ,  Antti Kilpinen

    IPC分类号： H01B12/10 ,  H10N60/01

    CPC分类号： H01B12/10 ,  H10N60/0128 ,  H10N60/0184

    摘要： A method for manufacturing a superconductor is described. A metal assembly precursor can be formed within a hollow copper support element. Forming the metal assembly precursor within a hollow copper support element by positioning a plurality of conductor elements about a core including Sn to provide a first plurality of inner interstitial spaces between the plurality of conductor elements between the core and conductor elements and a second plurality of outer interstitial spaces between the hollow copper support element and the core, the plurality of conductor elements including unreacted Nb. The metal assembly precursor can be reduced via cold drawing to produce a reduced metal assembly. The reduced metal assembly can be reaction heat treated so that the unreacted Nb undergoes a phase transformation to a reacted superconductor.

    FORMING SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICES WITH A HORIZONTALLY-CONFINED CHANNEL
    4.
    发明公开
    FORMING SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICES WITH A HORIZONTALLY-CONFINED CHANNEL 审中-公开

    公开(公告)号：US20240065113A1

    公开(公告)日：2024-02-22

    申请号：US18496493

    申请日：2023-10-27

    申请人： Microsoft Technology Licensing, LLC

    发明人： Geoffrey Charles GARDNER ,  Sergei Vyatcheslavovich GRONIN ,  Flavio GRIGGIO ,  Raymond Leonard KALLAHER ,  Noah Seth CLAY ,  Michael James MANFRA

    IPC分类号： H10N60/01

    CPC分类号： H10N60/0184 ,  H10N60/128

    摘要： Methods of forming semiconductor-superconductor hybrid devices with a horizontally-confined channel are described. An example method includes forming a first isolated semiconductor heterostructure and a second isolated semiconductor heterostructure. The method further includes forming a left gate adjacent to a first side of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure. The method further includes forming a right gate adjacent to a second side, opposite to the first side, of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure, where a top surface of each of the left gate and the right gate is offset vertically from a selected surface of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure by a predetermined offset amount. The method further includes forming a superconducting layer over each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure.

    Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel
    5.
    发明授权
    Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel 有权

    公开(公告)号：US12108688B2

    公开(公告)日：2024-10-01

    申请号：US18496493

    申请日：2023-10-27

    申请人： Microsoft Technology Licensing, LLC

    发明人： Geoffrey Charles Gardner ,  Sergei Vyatcheslavovich Gronin ,  Flavio Griggio ,  Raymond Leonard Kallaher ,  Noah Seth Clay ,  Michael James Manfra

    IPC分类号： H10N60/10 ,  H10N60/01

    CPC分类号： H10N60/0184 ,  H10N60/128

    摘要： Methods of forming semiconductor-superconductor hybrid devices with a horizontally-confined channel are described. An example method includes forming a first isolated semiconductor heterostructure and a second isolated semiconductor heterostructure. The method further includes forming a left gate adjacent to a first side of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure. The method further includes forming a right gate adjacent to a second side, opposite to the first side, of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure, where a top surface of each of the left gate and the right gate is offset vertically from a selected surface of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure by a predetermined offset amount. The method further includes forming a superconducting layer over each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure.

    Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel
    7.
    发明授权
    Forming semiconductor-superconductor hybrid devices with a horizontally-confined channel 有权

    公开(公告)号：US11849639B2

    公开(公告)日：2023-12-19

    申请号：US17532908

    申请日：2021-11-22

    申请人： Microsoft Technology Licensing, LLC

    发明人： Geoffrey Charles Gardner ,  Sergei Vyatcheslavovich Gronin ,  Flavio Griggio ,  Raymond Leonard Kallaher ,  Noah Seth Clay ,  Michael James Manfra

    IPC分类号： H10N60/10 ,  H10N60/01

    CPC分类号： H10N60/0184 ,  H10N60/128

    摘要： Methods of forming semiconductor-superconductor hybrid devices with a horizontally-confined channel are described. An example method includes forming a first isolated semiconductor heterostructure and a second isolated semiconductor heterostructure. The method further includes forming a left gate adjacent to a first side of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure. The method further includes forming a right gate adjacent to a second side, opposite to the first side, of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure, where a top surface of each of the left gate and the right gate is offset vertically from a selected surface of each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure by a predetermined offset amount. The method further includes forming a superconducting layer over each of the first isolated semiconductor heterostructure and the second isolated semiconductor heterostructure.

    Subelement based on Nb-containing rod elements with powder-filled core tube for an Nb
    9.
    发明授权
    Subelement based on Nb-containing rod elements with powder-filled core tube for an Nb 有权

    公开(公告)号：US11653575B2

    公开(公告)日：2023-05-16

    申请号：US17559394

    申请日：2021-12-22

    申请人： Bruker EAS GmbH

    发明人： Klaus Schlenga ,  Matheus Wanior ,  Vital Abaecherli ,  Manfred Thoener ,  Carl Buehler ,  Bernd Sailer

    IPC分类号： H01L33/64

    CPC分类号： H10N60/0184 ,  H10N60/0128

    摘要： A subelement (1) for an Nb3Sn-containing superconductor wire includes



    an Sn-containing core (2),
    an inner matrix (5) which includes Cu and surrounds the Sn-containing core (2),
    a region (7) of mutually abutting Nb-containing rod elements (8, 30), which surrounds the inner matrix (5), where the Nb-containing rod elements (8, 30) are each configured with an Nb-containing core filament (9; 31) and a Cu-containing filament casing (10),
    an outer matrix (6) which includes Cu and surrounds the region (7) of Nb-containing rod elements (8, 30). The Sn-containing core (2) has a core tube (3) into which an Sn-containing powder (4) has been introduced, the Sn-containing powder (4) being in a compacted state. This provides a subelement for an Nb3Sn-containing superconductor wire which cost-effectively yields an improved superconducting current carrying capacity.