公开(公告)号：US07892915B1

公开(公告)日：2011-02-22

申请号：US11367030

申请日：2006-03-02

Applicant: Jamal Ramdani ,  Craig Richard Printy ,  Thanas Budri

Inventor： Jamal Ramdani ,  Craig Richard Printy ,  Thanas Budri

IPC: H01L21/8249

CPC classification number: H01L29/7378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02617

Abstract: A base structure for high performance Silicon Germanium:Carbon (SiGe:C) based heterojunction bipolar transistors (HBTs) with phosophorus atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe:C spacer layer. During the ALD process, the percent concentrations of Germanium (Ge) and carbon (C) are substantially matched and phosphorus is a preferred dopant. The improved SiGe:C HBT is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

Abstract translation: 公开了一种用于高性能硅锗：具有磷光原子层掺杂（ALD）的碳（SiGe：C）基异质结双极晶体管（HBT））的基本结构。 ALD工艺使基底衬底受氮气（在大约等于500摄氏度的环境温度下），并提供另外的SiGe：C间隔层。 在ALD过程中，锗（Ge）和碳（C）的百分比浓度基本匹配，磷是优选的掺杂剂。 改进的SiGe：C HBT对工艺温度和曝光时间较不敏感，并且显示较低的掺杂剂偏析和更尖锐的基体分布。

公开(公告)号：US08115196B2

公开(公告)日：2012-02-14

申请号：US13031496

申请日：2011-02-21

Applicant: Janial Ramdani ,  Craig Richard Printy ,  Thanas Budri

Inventor： Janial Ramdani ,  Craig Richard Printy ,  Thanas Budri

IPC: H01L31/00

CPC classification number: H01L29/7378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02617

Abstract: A base structure for high performance Silicon Germanium:Carbon (SiGe:C) based heterojunction bipolar transistors (HBTs) with phosphorus atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe:C spacer layer. During the ALD process, the percent concentrations of Germanium (Ge) and carbon (C) are substantially matched and phosphorus is a preferred dopant. The improved SiGe:C HBT is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

Abstract translation: 公开了具有磷原子层掺杂（ALD）的高性能硅锗：基于碳（SiGe：C）的异质结双极晶体管（HBT）的基础结构。 ALD工艺使基底衬底受氮气（在大约等于500摄氏度的环境温度下），并提供另外的SiGe：C间隔层。 在ALD过程中，锗（Ge）和碳（C）的百分比浓度基本匹配，磷是优选的掺杂剂。 改进的SiGe：C HBT对工艺温度和曝光时间较不敏感，并且显示较低的掺杂剂偏析和更尖锐的基体分布。

公开(公告)号：US08007675B1

公开(公告)日：2011-08-30

申请号：US11178557

申请日：2005-07-11

Applicant: Andre P. Labonte ,  Craig Richard Printy

Inventor： Andre P. Labonte ,  Craig Richard Printy

IPC: C03C25/68

CPC classification number: H01L22/26 ,  H01L21/3065 ,  H01L22/12

Abstract: A system and method is disclosed that terminates an etch process of a semiconductor crystal material at a precisely located depth. The semiconductor crystal is made of a first material and has a buried layer of a second material that is stoichiometrically different than the first material. The buried layer is located at a depth in the first material at which it is desired to terminate the etch process. During the etch process an optical emission spectrum of the first material is monitored. The intensity of the spectrum decreases when the etch process reaches the second material of the buried layer. The etch process is terminated when the decrease in spectrum intensity is detected.

Abstract translation: 公开了一种在精确定位的深度处终止半导体晶体材料的蚀刻工艺的系统和方法。 半导体晶体由第一材料制成，并且具有与第一材料化学计量不同的第二材料的掩埋层。 掩埋层位于第一材料的深度处，期望终止蚀刻工艺。 在蚀刻工艺期间，监测第一材料的光发射光谱。 当蚀刻工艺到达掩埋层的第二材料时，光谱的强度降低。 当检测到光谱强度的降低时，蚀刻过程终止。

公开(公告)号：US20110180848A1

公开(公告)日：2011-07-28

申请号：US13031496

申请日：2011-02-21

Applicant: Jamal Ramdani ,  Craig Richard Printy ,  Thanas Budri

Inventor： Jamal Ramdani ,  Craig Richard Printy ,  Thanas Budri

IPC: H01L29/06

CPC classification number: H01L29/7378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02617

Abstract: A base structure for high performance Silicon Germanium:Carbon (SiGe:C) based heterojunction bipolar transistors (HBTs) with phosphorus atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe:C spacer layer. During the ALD process, the percent concentrations of Germanium (Ge) and carbon (C) are substantially matched and phosphorus is a preferred dopant. The improved SiGe:C HBT is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

Abstract translation: 公开了具有磷原子层掺杂（ALD）的高性能硅锗：基于碳（SiGe：C）的异质结双极晶体管（HBT）的基础结构。 ALD工艺使基底衬底受氮气（在大约等于500摄氏度的环境温度下），并提供另外的SiGe：C间隔层。 在ALD过程中，锗（Ge）和碳（C）的百分比浓度基本匹配，磷是优选的掺杂剂。 改进的SiGe：C HBT对工艺温度和曝光时间较不敏感，并且显示较低的掺杂剂偏析和更尖锐的基体分布。

公开(公告)号：US07485538B1

公开(公告)日：2009-02-03

申请号：US11390033

申请日：2006-03-27

Applicant: Jamal Ramdani ,  Craig Richard Printy

Inventor： Jamal Ramdani ,  Craig Richard Printy

IPC: H01L21/33

CPC classification number: H01L21/02576 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02584 ,  H01L21/0262 ,  H01L29/161 ,  H01L29/737

Abstract: A base structure for high performance Silicon Germanium (SiGe) based heterojunction bipolar transistors (HBTs) with arsenic atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas or hydrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe spacer layer. The surface of the final silicon cap layer is preferably etched to remove most of the arsenic. The resulting SiGe HBT with an arsenic ALD layer is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.

Abstract translation: 公开了具有砷原子层掺杂（ALD）的高性能硅锗（SiGe）基异质结双极晶体管（HBT）的基础结构。 ALD工艺使基底衬底受到氮气或氢气（在大约等于500摄氏度的环境温度下），并提供另外的SiGe间隔层。 优选蚀刻最终硅覆盖层的表面以除去大部分的砷。 所得到的具有砷ALD层的SiGe HBT对于工艺温度和曝光时间不太敏感，并且表现出更低的掺杂剂偏析和更尖锐的基体轮廓。