公开(公告)号：US20090163005A1

公开(公告)日：2009-06-25

申请号：US12322932

申请日：2009-02-09

申请人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L21/28

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

摘要翻译： 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US07504328B2

公开(公告)日：2009-03-17

申请号：US11126031

申请日：2005-05-10

申请人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L21/441

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

摘要翻译： 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US08758935B2

公开(公告)日：2014-06-24

申请号：US13148022

申请日：2010-02-04

申请人： Qi-Dan Ling ,  Jian Zhu ,  Chunxiang Zhu ,  Daniel Siu-Hung Chan ,  En-Tang Kang ,  Koon-Gee Neoh

发明人： Qi-Dan Ling ,  Jian Zhu ,  Chunxiang Zhu ,  Daniel Siu-Hung Chan ,  En-Tang Kang ,  Koon-Gee Neoh

IPC分类号： H01M4/02 ,  H01M10/18 ,  H01M6/48 ,  C08G61/10

CPC分类号： H01L51/0043 ,  C08G61/02 ,  C08G2261/142 ,  C08G2261/1424 ,  C08G2261/143 ,  C08G2261/3422

摘要： A compound comprises a polymeric chain with a repeat unit repeated more than 5 times. The repeat unit comprises conjugated first and second cyclic groups and a plurality of side groups each bonded to one of the cyclic groups. A side group bonded to the first cyclic group is an electron donor and a side group bonded to the second cyclic group is an electron acceptor, such that the compound is switchable between first and second electrical conductive states by application of an electric field to the compound. At least one of the side groups is selected so that the compound is soluble in an organic solvent. The compound may be used in films, memory cells, or electronic devices. A layer of the compound may be formed on a surface by dissolving the compound in an organic solvent, applying the solution to the surface, and then removing the solvent.

摘要翻译： 化合物包括具有重复多于5次的重复单元的聚合物链。 重复单元包括共轭的第一和第二环状基团和多个侧基，每个侧基键合到一个环状基团。 键合到第一环状基团的侧基是电子给体，并且与第二环状基团键合的侧基是电子受体，使得化合物可以通过向化合物施加电场而在第一和第二导电状态之间切换 。 选择至少一个侧基，使得该化合物可溶于有机溶剂。 该化合物可用于膜，记忆电池或电子器件中。 可以通过将化合物溶解在有机溶剂中，将溶液施加到表面，然后除去溶剂，在表面上形成一层化合物。

公开(公告)号：US20050275033A1

公开(公告)日：2005-12-15

申请号：US11126031

申请日：2005-05-10

申请人： Shiyang Zhu ,  Jingde Chen ,  Sung Lee ,  Ming Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

发明人： Shiyang Zhu ,  Jingde Chen ,  Sung Lee ,  Ming Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/47 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

摘要： A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

摘要翻译： 提出了一种用于源极和漏极制造具有镱硅化物（YbSi 2-x-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi 2-x 的制造与正常的CMOS工艺兼容，但是在这里不需要对于ErSi 2-x N制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。