Abstract:
A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.
Abstract:
A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.
Abstract:
Exemplary embodiments of the present invention relate to light emitting devices including strontium oxyorthosilicate-type phosphors. The light emitting device includes a light emitting diode, which emits light in the UV or visible range, and phosphors disposed around the light emitting diode to absorb light emitted from the light emitting diode and emit light having a different wavelength from the absorbed light. The phosphors include an oxyorthosilicate phosphor having a general formula of Sr3-x-y-zCaxMIIySiO5: Euz with a calcium molar fraction in the range of 0
Abstract:
A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates.
Abstract:
Disclosed is a light emitting diode (LED) package having an array of light emitting cells coupled in series. The LED package comprises a package body and an LED chip mounted on the package body. The LED chip has an array of light emitting cells coupled in series. Since the LED chip having the array of light emitting cells coupled in series is mounted on the LED package, it can be driven directly using an AC power source.
Abstract:
A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
Abstract:
Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.
Abstract:
Exemplary embodiments of the present invention relate to inorganic phosphors based on silicate compounds having improved stability under a resulting radiation load and resistance to atmospheric humidity, which are capable of converting higher-energy excitation radiation, i.e. ultraviolet (UV) or blue light, with high efficiency into a longer-wavelength radiation which may be in the visible spectral range. A calcium molar fraction x having a value between 0 and 0.05 is added to a silicate phosphor having the general formula Sr3-x-y-zCaxMIIySiO5:Euz.
Abstract:
Method for producing a probe for atomic force microscopy with a silicon nitride cantilever and an integrated single crystal silicon tetrahedral tip with high resonant frequencies and low spring constants intended for high speed AFM imaging.
Abstract:
An illumination system includes multiple light emitting devices arranged in an area so as to be spaced apart from each other. Each light emitting device includes multiple light emitting diode arrays each of which has one light emitting diode or a plurality of light emitting diodes connected in series. The numbers of the light emitting diodes included in each light emitting diode arrays differs from each other. A controller is configured to establish one or more groups each including one or more light emitting devices and adjust an illumination state of each light emitting device by controlling the driving state of the one or more light emitting diode arrays included in each light emitting device. The controller may select the number of light emitting devices included in each group based on an external condition.