Bootstrapped High-Side Driver Control Without Static DC Current for Driving a Motor Bridge Circuit
    1.
    发明申请
    Bootstrapped High-Side Driver Control Without Static DC Current for Driving a Motor Bridge Circuit 有权
    引导式高边驱动器控制,无静态直流电流驱动马达桥电路

    公开(公告)号:US20120126736A1

    公开(公告)日:2012-05-24

    申请号:US12948890

    申请日:2010-11-18

    IPC分类号: H02P6/14 H02M7/5387

    摘要: A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.

    摘要翻译: 用于将高侧驱动晶体管的栅极节点驱动到来自电荷泵的升压电压的电动机驱动器电路很少或没有来自电荷泵的静态电流。 栅极节点被p沟道上拉控制晶体管拉到升压电压,该p沟道上拉控制晶体管由p沟道晶体管驱动,该p沟道晶体管由电容器泵浦,该电流从电荷泵截止电流流向地电。 当高侧驱动器关闭时,n沟道输出短路晶体管将栅极节点短路到输出。 耦合电容器为每个输出跃迁初始化短路晶体管。 p沟道输出感测晶体管产生反馈到驱动耦合电容器的第二级。 P沟道二极管晶体管和n沟道均衡晶体管控制耦合电容上的电压。

    Optical Black-Level Cancellation for Optical Sensors Using Open-Loop Sample Calibration Amplifier
    2.
    发明申请
    Optical Black-Level Cancellation for Optical Sensors Using Open-Loop Sample Calibration Amplifier 有权
    使用开环采样校准放大器的光学传感器的光学黑电平消除

    公开(公告)号:US20110221938A1

    公开(公告)日:2011-09-15

    申请号:US12722148

    申请日:2010-03-11

    IPC分类号: H04N9/64

    CPC分类号: H04N5/361 H04N5/3575

    摘要: A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.

    摘要翻译: 当在外围读取暗像素时,光学黑色像素(OBP)消除电路校正CCD / CMOS图像传感器中的传感器的偏移。 在相同像素脉冲的两个相位期间,将像素电压切换到采样电容器。 采样电容器和反馈电容器连接到放大器的差分输入。 累积电容器累积电压差并产生反馈到存储放大器偏移的另一采样电容器的共模电压。 采样电容器和累加电容器及其相关的开关形成离散时间一阶低通滤波器,其在第一阶段期间对像素电压进行滤波。 在第二阶段,放大器用作单位增益放大器,以输出从图像传感器读取黑化或覆盖像素时在OBP时间期间产生的像素电压差的平均值。

    Gain control circuit
    3.
    发明授权
    Gain control circuit 有权
    增益控制电路

    公开(公告)号:US07659780B2

    公开(公告)日:2010-02-09

    申请号:US11947085

    申请日:2007-11-29

    IPC分类号: H03F3/45

    摘要: A gain control circuit including a resistor with a first terminal and a second terminal; an operational amplifier with an inverting terminal thereof electrically coupled to said first terminal of said resistor; a non-inverting terminal thereof; and an output terminal thereof; an amplifier circuit for transforming the voltage change of said operational amplifier output into a substantially exponential current change; wherein the output of said amplifier circuit is electrically coupled to said inverting terminal of said operational amplifier. The above described gain control circuit is able to perform wide bandwidth input signal buffering with linearity under low voltage and low power conditions. The circuit also offers low output impedances without the need of additional buffers and hence minimizing circuit size and manufacturing costs.

    摘要翻译: 一种增益控制电路,包括具有第一端子和第二端子的电阻器; 运算放大器,其反相端电耦合到所述电阻器的所述第一端子; 其非反相端子; 及其输出端子; 放大器电路,用于将所述运算放大器输出的电压变化变换成基本指数的电流变化; 其中所述放大器电路的输出电耦合到所述运算放大器的所述反相端。 上述增益控制电路能够在低电压和低功率条件下以线性度执行宽带宽输入信号缓冲。 该电路还提供低输出阻抗,而不需要额外的缓冲器,因此最小化电路尺寸和制造成本。

    Diode-less full-wave rectifier for low-power on-chip AC-DC conversion
    4.
    发明授权
    Diode-less full-wave rectifier for low-power on-chip AC-DC conversion 有权
    无二极管全波整流器用于低功耗片上AC-DC转换

    公开(公告)号:US08797776B2

    公开(公告)日:2014-08-05

    申请号:US13652474

    申请日:2012-10-16

    IPC分类号: H02M7/5387

    摘要: A bridge rectifier operates on low A.C. input voltages such as received by a Radio-Frequency Identification (RFID) device. Voltage drops due to bridge diodes are avoided. Four p-channel transistors are arranged in a transistor bridge across the A.C. inputs to produce an internal power voltage. Another four diode-connected transistors form a start-up diode bridge that generates a comparator power voltage and a reference ground. The start-up diode bridge operates even during initial start-up before the comparator and boost drivers operate. A comparator receives the A.C. input and controls timing of voltage boost drivers that alternately drive gates of the four p-channel transistors in the transistor bridge with voltages boosted higher than the peak A.C. voltage. Substrates are connected to the power voltage on the power-voltage half of the bridge and to the A.C. inputs on the ground half of the bridge to fully shut off transistors, preventing reverse current flow.

    摘要翻译: 桥式整流器在诸如由射频识别(RFID)设备接收的低交流输入电压下工作。 避免了由桥二极管引起的电压降。 四个P沟道晶体管布置在跨越交流输入的晶体管桥中以产生内部电源电压。 另外四个二极管连接的晶体管形成起始二极管电桥,产生比较器电源电压和参考地。 在比较器和升压驱动器运行之前,起动二极管桥即使在初始启动期间也工作。 比较器接收交流输入并且控制升压驱动器的定时,其交替地驱动晶体管桥中的四个p沟道晶体管的栅极,其电压升高高于峰值交流电压。 基板连接到桥的电源电压一半的电源电压和桥接器的一半的交流输入,以完全关闭晶体管,防止反向电流流动。

    Diode-Less Full-Wave Rectifier for Low-Power On-Chip AC-DC Conversion
    5.
    发明申请
    Diode-Less Full-Wave Rectifier for Low-Power On-Chip AC-DC Conversion 有权
    无二极管全波整流器,用于低功耗片上AC-DC转换

    公开(公告)号:US20140104909A1

    公开(公告)日:2014-04-17

    申请号:US13652474

    申请日:2012-10-16

    IPC分类号: H02M7/217

    摘要: A bridge rectifier operates on low A.C. input voltages such as received by a Radio-Frequency Identification (RFID) device. Voltage drops due to bridge diodes are avoided. Four p-channel transistors are arranged in a transistor bridge across the A.C. inputs to produce an internal power voltage. Another four diode-connected transistors form a start-up diode bridge that generates a comparator power voltage and a reference ground. The start-up diode bridge operates even during initial start-up before the comparator and boost drivers operate. A comparator receives the A.C. input and controls timing of voltage boost drivers that alternately drive gates of the four p-channel transistors in the transistor bridge with voltages boosted higher than the peak A.C. voltage. Substrates are connected to the power voltage on the power-voltage half of the bridge and to the A.C. inputs on the ground half of the bridge to fully shut off transistors, preventing reverse current flow.

    摘要翻译: 桥式整流器在诸如由射频识别(RFID)设备接收的低交流输入电压下工作。 避免了由桥二极管引起的电压降。 四个P沟道晶体管布置在跨越交流输入的晶体管桥中以产生内部电源电压。 另外四个二极管连接的晶体管形成起始二极管电桥,产生比较器电源电压和参考地。 在比较器和升压驱动器运行之前,起动二极管桥即使在初始启动期间也工作。 比较器接收交流输入并且控制升压驱动器的定时,其交替地驱动晶体管桥中的四个p沟道晶体管的栅极,其电压升高高于峰值交流电压。 基板连接到桥的电源电压一半的电源电压和桥接器的一半的交流输入,以完全关闭晶体管,防止反向电流流动。

    Bootstrapped high-side driver control without static DC current for driving a motor bridge circuit
    6.
    发明授权
    Bootstrapped high-side driver control without static DC current for driving a motor bridge circuit 有权
    引导式高边驱动器控制,无静态直流电流,用于驱动电机桥电路

    公开(公告)号:US08258852B2

    公开(公告)日:2012-09-04

    申请号:US12948890

    申请日:2010-11-18

    IPC分类号: H03K17/16

    摘要: A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.

    摘要翻译: 用于将高侧驱动晶体管的栅极节点驱动到来自电荷泵的升压电压的电动机驱动器电路很少或没有来自电荷泵的静态电流。 栅极节点被p沟道上拉控制晶体管拉到升压电压,该p沟道上拉控制晶体管由p沟道晶体管驱动,该p沟道晶体管由电容器泵浦,该电流从电荷泵截止电流流向地电。 当高侧驱动器关闭时,n沟道输出短路晶体管将栅极节点短路到输出。 耦合电容器为每个输出跃迁初始化短路晶体管。 p沟道输出感测晶体管产生反馈到驱动耦合电容器的第二级。 P沟道二极管晶体管和n沟道均衡晶体管控制耦合电容器上的电压。

    Optical black-level cancellation for optical sensors using open-loop sample calibration amplifier
    7.
    发明授权
    Optical black-level cancellation for optical sensors using open-loop sample calibration amplifier 有权
    使用开环采样校准放大器的光学传感器的光学黑电平消除

    公开(公告)号:US08179455B2

    公开(公告)日:2012-05-15

    申请号:US12722148

    申请日:2010-03-11

    IPC分类号: H04N5/217

    CPC分类号: H04N5/361 H04N5/3575

    摘要: A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.

    摘要翻译: 当在外围读取暗像素时,光学黑色像素(OBP)消除电路校正CCD / CMOS图像传感器中的传感器的偏移。 在相同像素脉冲的两个相位期间,将像素电压切换到采样电容器。 采样电容器和反馈电容器连接到放大器的差分输入。 累积电容器累积电压差并产生反馈到存储放大器偏移的另一采样电容器的共模电压。 采样电容器和累加电容器及其相关的开关形成离散时间一阶低通滤波器,其在第一阶段期间对像素电压进行滤波。 在第二阶段,放大器用作单位增益放大器,以输出从图像传感器读取黑化或覆盖像素时在OBP时间期间产生的像素电压差的平均值。

    GAIN CONTROL CIRCUIT
    8.
    发明申请
    GAIN CONTROL CIRCUIT 有权
    增益控制电路

    公开(公告)号:US20090140808A1

    公开(公告)日:2009-06-04

    申请号:US11947085

    申请日:2007-11-29

    IPC分类号: H03F3/45

    摘要: A gain control circuit including a resistor with a first terminal and a second terminal; an operational amplifier with an inverting terminal thereof electrically coupled to said first terminal of said resistor; a non-inverting terminal thereof; and an output terminal thereof; an amplifier circuit for transforming the voltage change of said operational amplifier output into a substantially exponential current change; wherein the output of said amplifier circuit is electrically coupled to said inverting terminal of said operational amplifier. The above described gain control circuit is able to perform wide bandwidth input signal buffering with linearity under low voltage and low power conditions. The circuit also offers low output impedances without the need of additional buffers and hence minimizing circuit size and manufacturing costs.

    摘要翻译: 一种增益控制电路,包括具有第一端子和第二端子的电阻器; 运算放大器,其反相端电耦合到所述电阻器的所述第一端子; 其非反相端子; 及其输出端子; 放大器电路,用于将所述运算放大器输出的电压变化变换成基本指数的电流变化; 其中所述放大器电路的输出电耦合到所述运算放大器的所述反相端。 上述增益控制电路能够在低电压和低功率条件下以线性方式执行宽带宽输入信号缓冲。 该电路还提供低输出阻抗,而不需要额外的缓冲器,因此最小化电路尺寸和制造成本。

    CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias
    9.
    发明授权
    CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias 有权
    CMOS温度传感器,灵敏度由电流镜和电阻比设置,不限制直流偏置

    公开(公告)号:US08864377B2

    公开(公告)日:2014-10-21

    申请号:US13416728

    申请日:2012-03-09

    IPC分类号: G01K7/01

    CPC分类号: G01K7/01 H01L35/32

    摘要: An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.

    摘要翻译: 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体(CMOS)工艺中实现。 一对晶体管具有对电压敏感的集电极电流,直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极,其电压与另一个晶体管的发射极电压相比较,该误差放大器产生与绝对温度成比例的电流源的偏置电压,因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较,以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比,并乘以镜像因子。 还可以提供差分输出。

    CMOS Temperature Sensor with Sensitivity Set by Current-Mirror and Resistor Ratios without Limiting DC Bias
    10.
    发明申请
    CMOS Temperature Sensor with Sensitivity Set by Current-Mirror and Resistor Ratios without Limiting DC Bias 有权
    CMOS温度传感器,灵敏度由电流镜和电阻比设定,不限制直流偏置

    公开(公告)号:US20130235903A1

    公开(公告)日:2013-09-12

    申请号:US13416728

    申请日:2012-03-09

    IPC分类号: G01K7/01

    CPC分类号: G01K7/01 H01L35/32

    摘要: An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.

    摘要翻译: 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体(CMOS)工艺中实现。 一对晶体管具有对电压敏感的集电极电流,直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极,其电压与另一个晶体管的发射极电压相比较,该误差放大器产生与绝对温度成比例的电流源的偏置电压,因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较,以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比,并乘以镜像因子。 还可以提供差分输出。