-
1.发明授权CMOS temperature sensor with sensitivity set by current-mirror and resistor ratios without limiting DC bias 有权CMOS温度传感器，灵敏度由电流镜和电阻比设置，不限制直流偏置公开(公告)号：US08864377B2
公开(公告)日：2014-10-21
申请号：US13416728
申请日：2012-03-09
IPC分类号： G01K7/01
摘要： An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.
摘要翻译： 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体（CMOS）工艺中实现。 一对晶体管具有对电压敏感的集电极电流，直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极，其电压与另一个晶体管的发射极电压相比较，该误差放大器产生与绝对温度成比例的电流源的偏置电压，因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较，以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比，并乘以镜像因子。 还可以提供差分输出。
-
2.发明申请CMOS Temperature Sensor with Sensitivity Set by Current-Mirror and Resistor Ratios without Limiting DC Bias 有权CMOS温度传感器，灵敏度由电流镜和电阻比设定，不限制直流偏置公开(公告)号：US20130235903A1
公开(公告)日：2013-09-12
申请号：US13416728
申请日：2012-03-09
IPC分类号： G01K7/01
摘要： An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided.
摘要翻译： 片上温度传感器电路可以在使用PNP晶体管的标准互补金属氧化物半导体（CMOS）工艺中实现。 一对晶体管具有对电压敏感的集电极电流，直接和由于饱和电流。 缩放电阻连接到一个晶体管的发射极，其电压与另一个晶体管的发射极电压相比较，该误差放大器产生与绝对温度成比例的电流源的偏置电压，因为饱和电流灵敏度被减去。 电流被镜像以从输出端吸收电流通过乘法器电阻。 连接在乘法器电阻上的放大器将参考电压进行比较，以独立于温度敏感度设置直流偏置。 温度灵敏度与乘法器电阻和比例电阻的比例成正比，并乘以镜像因子。 还可以提供差分输出。
-
3.发明授权Bootstrapped high-side driver control without static DC current for driving a motor bridge circuit 有权引导式高边驱动器控制，无静态直流电流，用于驱动电机桥电路公开(公告)号：US08258852B2
公开(公告)日：2012-09-04
申请号：US12948890
申请日：2010-11-18
IPC分类号： H03K17/16
CPC分类号： H03K17/063 , H02P7/04 , H03K17/0822 , H03K2217/0036 , H03K2217/0063
摘要： A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.
摘要翻译： 用于将高侧驱动晶体管的栅极节点驱动到来自电荷泵的升压电压的电动机驱动器电路很少或没有来自电荷泵的静态电流。 栅极节点被p沟道上拉控制晶体管拉到升压电压，该p沟道上拉控制晶体管由p沟道晶体管驱动，该p沟道晶体管由电容器泵浦，该电流从电荷泵截止电流流向地电。 当高侧驱动器关闭时，n沟道输出短路晶体管将栅极节点短路到输出。 耦合电容器为每个输出跃迁初始化短路晶体管。 p沟道输出感测晶体管产生反馈到驱动耦合电容器的第二级。 P沟道二极管晶体管和n沟道均衡晶体管控制耦合电容器上的电压。
-
4.发明授权Optical black-level cancellation for optical sensors using open-loop sample calibration amplifier 有权使用开环采样校准放大器的光学传感器的光学黑电平消除公开(公告)号：US08179455B2
公开(公告)日：2012-05-15
申请号：US12722148
申请日：2010-03-11
IPC分类号： H04N5/217
CPC分类号： H04N5/361 , H04N5/3575
摘要： A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.
摘要翻译： 当在外围读取暗像素时，光学黑色像素（OBP）消除电路校正CCD / CMOS图像传感器中的传感器的偏移。 在相同像素脉冲的两个相位期间，将像素电压切换到采样电容器。 采样电容器和反馈电容器连接到放大器的差分输入。 累积电容器累积电压差并产生反馈到存储放大器偏移的另一采样电容器的共模电压。 采样电容器和累加电容器及其相关的开关形成离散时间一阶低通滤波器，其在第一阶段期间对像素电压进行滤波。 在第二阶段，放大器用作单位增益放大器，以输出从图像传感器读取黑化或覆盖像素时在OBP时间期间产生的像素电压差的平均值。
-
5.发明申请Bootstrapped High-Side Driver Control Without Static DC Current for Driving a Motor Bridge Circuit 有权引导式高边驱动器控制，无静态直流电流驱动马达桥电路公开(公告)号：US20120126736A1
公开(公告)日：2012-05-24
申请号：US12948890
申请日：2010-11-18
IPC分类号： H02P6/14 , H02M7/5387
CPC分类号： H03K17/063 , H02P7/04 , H03K17/0822 , H03K2217/0036 , H03K2217/0063
摘要： A motor driver circuit for driving the gate node of a high-side driver transistor to a boosted voltage from a charge pump draws little or no static current from the charge pump. The gate node is pulled to the boosted voltage by a p-channel pullup-control transistor that is driven by p-channel transistors that are pumped by capacitors that cut off current flow to ground from the charge pump. An n-channel output-shorting transistor shorts the gate node to the output when the high-side driver is turned off. A coupling capacitor initializes the shorting transistor for each output transition. A p-channel output-sensing transistor generates a feedback to a second stage that drives the coupling capacitor. P-channel diode transistors and an n-channel equalizing transistor control the voltage on the coupling capacitor.
摘要翻译： 用于将高侧驱动晶体管的栅极节点驱动到来自电荷泵的升压电压的电动机驱动器电路很少或没有来自电荷泵的静态电流。 栅极节点被p沟道上拉控制晶体管拉到升压电压，该p沟道上拉控制晶体管由p沟道晶体管驱动，该p沟道晶体管由电容器泵浦，该电流从电荷泵截止电流流向地电。 当高侧驱动器关闭时，n沟道输出短路晶体管将栅极节点短路到输出。 耦合电容器为每个输出跃迁初始化短路晶体管。 p沟道输出感测晶体管产生反馈到驱动耦合电容器的第二级。 P沟道二极管晶体管和n沟道均衡晶体管控制耦合电容上的电压。
-
6.发明申请Optical Black-Level Cancellation for Optical Sensors Using Open-Loop Sample Calibration Amplifier 有权使用开环采样校准放大器的光学传感器的光学黑电平消除公开(公告)号：US20110221938A1
公开(公告)日：2011-09-15
申请号：US12722148
申请日：2010-03-11
IPC分类号： H04N9/64
CPC分类号： H04N5/361 , H04N5/3575
摘要： A Optical Black Pixel (OBP) cancellation circuit corrects offsets in sensors in a CCD/CMOS image sensor when reading dark pixels such at the periphery. A pixel voltage is switched to a sampling capacitor during two phases of the same pixel pulse. Sampling capacitors and feedback capacitors connect to differential inputs of an amplifier. An accumulating capacitor accumulates voltage differences and generates a common-mode voltage that is fed back to another sampling capacitor that stores an amplifier offset. The sampling capacitor and accumulating capacitor and their associated switches form a discrete-time first-order low-pass filter that filters the pixel voltage during the first phase. In the second phase the amplifier acts as a unity-gain amplifier to output an average of the pixel voltage differences generated during an OBP time when blackened or covered pixels are read from the image sensor.
摘要翻译： 当在外围读取暗像素时，光学黑色像素（OBP）消除电路校正CCD / CMOS图像传感器中的传感器的偏移。 在相同像素脉冲的两个相位期间，将像素电压切换到采样电容器。 采样电容器和反馈电容器连接到放大器的差分输入。 累积电容器累积电压差并产生反馈到存储放大器偏移的另一采样电容器的共模电压。 采样电容器和累加电容器及其相关的开关形成离散时间一阶低通滤波器，其在第一阶段期间对像素电压进行滤波。 在第二阶段，放大器用作单位增益放大器，以输出从图像传感器读取黑化或覆盖像素时在OBP时间期间产生的像素电压差的平均值。
-
公开(公告)号：US20110056242A1
公开(公告)日：2011-03-10
申请号：US12876697
申请日：2010-09-07
申请人： Kam Hung CHAN
发明人： Kam Hung CHAN
IPC分类号： A44C17/02
CPC分类号： A44C17/02
摘要： A visible setting comprises a setting base and one or more gemstones or diamonds. The setting base comprises one or more upper fixing portions and a lower connection portion, each fixing portion is fixed to a girdle of a gemstone or diamond at certain fixing points to enable to fix the gemstone or diamond in its setting position. Except for the fixing points, the rest of the girdle, a crown and a table of the gemstone or diamond are exposed, and a pavilion of the gemstone or diamond is suspended, and thereby a culet of the gemstone or diamond and part of the pavilion around the culet are displaced away from the setting base to enable to be exposed, which enables external light to enter into the gemstone or diamond from the crown, the table and the exposed part of the pavilion. The present visible setting could enhance the reflection of light within the gemstones or diamonds, and make the gemstones or diamonds as brilliant as possible.
摘要翻译： 可见的设置包括设置基座和一个或多个宝石或钻石。 设置基座包括一个或多个上固定部分和下连接部分，每个固定部分在某些固定点处固定到宝石或金刚石的腰带上，以使宝石或金刚石固定在其设置位置。 除了固定点之外，其余的腰带，皇冠和宝石或钻石的桌子都被暴露出来，宝石或钻石的亭子被悬挂下来，从而形成宝石或钻石的一角，还有一些亭子 底部周围的位置离开设置基座，使其能够被暴露，这使得外部光线从拱顶，桌子和露台部分进入宝石或钻石。 目前的可见设置可以增强宝石或钻石内部光的反射，并使宝石或钻石尽可能辉煌。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.012 秒)
