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1.发明授权Electroless metal deposition of electronic components in an enclosable vessel 失效将电子部件无电镀金属沉积在可封闭的容器中
公开(公告)号：US6165912A
公开(公告)日：2000-12-26
申请号：US395398
申请日：1999-09-14
CPC分类号： H01L21/288 , C23C18/1666 , C23C18/1831 , C23C18/54 , H05K3/187
摘要： The present invention provides methods of electrolessly depositing metal onto the surfaces of electronic components using an enclosable single vessel. The methods of the present invention include contacting the electronic components with an activation solution followed by contacting the electronic components with a metal deposition solution. In a preferred embodiment of the present invention, the oxygen levels in the activation solution and metal deposition solution are controlled in a manner for improved processing results. In another preferred embodiment of the present invention, the activation and metal deposition solutions are used one time without reuse.
摘要翻译： 本发明提供使用可封闭的单一容器将金属无电沉积在电子部件的表面上的方法。 本发明的方法包括使电子部件与激活溶液接触，然后使电子部件与金属沉积溶液接触。 在本发明的优选实施方案中，活化溶液和金属沉积溶液中的氧含量以改进的处理结果的方式进行控制。 在本发明的另一优选实施方案中，使用一次活化和金属沉积溶液而不再使用。
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公开(公告)号：US4917123A
公开(公告)日：1990-04-17
申请号：US252823
申请日：1988-10-03
CPC分类号： B05C3/109 , B08B3/04 , B08B7/0092 , H01L21/67028 , B08B2203/002 , Y10S134/902
摘要： Contamination of wafers is reduced by an enclosed full-flow method and apparatus for the cleaning and other wet processing of semiconductor wafers. Process fluids flow sequentially and continuously past the wafers such that the processing does not require movement or operator handling of the wafers between processing steps. The vessel containing the wafers is hydraulically full during each process step. Wafers may be cleaned using a hot corrosive fluid, such as sulfuric acid; rinsed using high purity water at high flow rates; and dried using a drying fluid such as isopropanol. In addition, chemical reagents such as dilute hydrofluoric acid or hydrogen peroxide may be precisely mixed in situ and applied to the wafer surface for a precisely controlled period, by injecting concentrated reagent into rinse water purified by multipass filtration.
摘要翻译： 通过用于半导体晶片的清洗和其它湿法处理的封闭全流动方法和装置来减少晶片的污染。 工艺流体顺序并连续地流过晶片，使得处理不需要在处理步骤之间移动或操作处理晶片。 在每个工艺步骤期间，容纳晶片的容器是液压充满的。 可以使用热腐蚀性流体如硫酸清洁晶片; 用高流量的高纯度水冲洗; 并使用干燥流体如异丙醇干燥。 此外，化学试剂如稀氢氟酸或过氧化氢可以通过将浓缩的试剂注入通过多次过滤纯化的漂洗水中而在原位精确混合并施加到晶片表面上以精确控制的时间。
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公开(公告)号：US4911761A
公开(公告)日：1990-03-27
申请号：US184544
申请日：1988-04-20
CPC分类号： B05C3/109 , B08B3/04 , B08B7/0092 , H01L21/67028 , B08B2203/002 , Y10S134/902
摘要： Object surfaces such as semiconductor wafers which are suspended in a rinsing fluid may be dried by replacing the rinsing fluid, such as water, with a drying vapor by directly displacing the water from the surfaces at such a rate that substantially no liquid droplets are left on the surfaces after replacement of the water with drying vapor. Preferably, the drying vapor is miscible with water and forms a minimum-boiling azeotrope with water, such as isopropanol. The drying vapor is then purged with a stream of dry, inert, non-condensable gas such as nitrogen. A vaporizer with automatic refill mechanism produces saturated drying vapor which may then be flashed to a superheated vapor prior to contacting the surfaces, which preferably are at the same temperature as the vapor. Preferably, no liquid is removed by evaporation, and the drying takes place in an enclosed, hydraulically full system which does not require movement or handling of the surfaces between rinsing and drying steps.
摘要翻译： 悬浮在冲洗流体中的物体表面如半导体晶片可以通过用干燥蒸气替换冲洗流体例如水来干燥，该干燥蒸汽通过直接从表面移出水，其速度基本上不留下液滴 用干燥蒸汽替换水后的表面。 优选地，干燥蒸气与水混溶并与水形成最小沸点共沸物，例如异丙醇。 然后用干燥，惰性，不可冷凝的气体如氮气吹扫干燥蒸气。 具有自动补充机构的蒸发器产生饱和的干燥蒸气，然后在接触表面之前将其蒸发至过热蒸汽，其优选地处于与蒸气相同的温度。 优选地，不通过蒸发除去液体，并且干燥发生在封闭的液压完全系统中，其不需要移动或处理漂洗和干燥步骤之间的表面。
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公开(公告)号：US4856544A
公开(公告)日：1989-08-15
申请号：US125245
申请日：1987-11-25
IPC分类号： B05C3/109 , B08B7/00 , C23C16/54 , C30B33/00 , H01L21/00 , H01L21/673 , H01L21/677
CPC分类号： H01L21/67051 , B05C3/109 , B08B7/0092 , C23C16/54 , C30B33/00 , H01L21/67057 , H01L21/67754 , H01L21/67781 , Y10S134/902
摘要： Disclosed is apparatus for treating semiconductor wafers with fluids. The device comprises one or more vessels having lateral walls defining open ends. The vessels are arranged serially, and the open ends are engaged with a treatment fluid inlet and a treatment fluid outlet. Wafers or a wafer carrier are introduced into the vessels for treatment. The vessels are constructed of material that is inert to the treatment fluids and designed to minimize creation of eddy currents and fluid traps. Hydraulically full fluid flow through the vessel uniformly contacts the wafers with the fluid and results in improved and more reproducible prediffusion cleaning, rinsing, etc.
摘要翻译： 公开了用流体处理半导体晶片的装置。 该装置包括具有限定开口端的侧壁的一个或多个容器。 容器串联布置，开口端与处理流体入口和处理流体出口接合。 将晶片或晶片载体引入血管进行治疗。 容器由对处理流体惰性的材料构成，设计用于最小化涡流和流体捕集器的产生。 通过容器的液压全流体流体与流体均匀地接触晶片，并且导致改进的和更可再现的预扩散清洗，漂洗等。
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公开(公告)号：US4633893A
公开(公告)日：1987-01-06
申请号：US747894
申请日：1985-06-24
IPC分类号： H01L21/306 , B05B3/04 , B05C3/109 , B08B3/04 , B08B7/00 , C23C16/54 , C30B33/00 , H01L21/00 , H01L21/304 , H01L21/673 , H01L21/677
CPC分类号： B08B3/04 , B05C3/109 , B08B7/0092 , C23C16/54 , C30B33/00 , H01L21/67023 , H01L21/67028 , H01L21/67754 , H01L21/67781 , B08B2203/002 , Y10S134/902
摘要： An improved apparatus for enclosed flow-line semiconductor wafer treatment includes a wafer-containing vessel and a mechanism for imparting plug-flow to a treatment fluid flowing into the vessel. One plug-flow imparting mechanism includes a flow-expansion input element and a fixed helical flow-diverting surface. Another mechanism incorporates a rotating flow diverting surface.
摘要翻译： 用于封闭流线半导体晶片处理的改进装置包括含晶片的容器和用于向流入容器的处理流体施加插塞流的机构。 一个插塞流动赋予机构包括流量膨胀输入元件和固定的螺旋流量转向表面。 另一种机构包括旋转流动转向表面。
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公开(公告)号：US4984597A
公开(公告)日：1991-01-15
申请号：US431268
申请日：1989-11-03
CPC分类号： H01L21/67028 , B05C3/109 , B08B3/04 , B08B7/0092 , B08B2203/002 , Y10S134/902
摘要： Object surfaces such as semiconductor wafers which are suspended in a rinsing fluid may be dried by replacing the rinsing fluid, such as water, with a drying vapor by directly displacing the water from the surfaces at such a rate that substantially no liquid droplets are left on the surfaces after replacement of the water with drying vapor. Preferably, the drying vapor is miscible with water and forms a minimum-boiling azeotrope with water, such as isopropanol. The drying vapor is then purged with a stream of dry, inert, noncondensable gas such as nitrogen. A vaporizer with automatic refill mechanism produces saturated drying vapor which may then be flashed to a superheated vapor prior to contacting the surfaces, which preferably are at the same temperature as the vapor. Preferably, no liquid is removed by evaporation, and the drying takes place in an enclosed, hydraulically full system which does not require movement or handling of the surfaces between rinsing and drying steps.
摘要翻译： 悬浮在冲洗流体中的物体表面如半导体晶片可以通过用干燥蒸气替换冲洗流体例如水来干燥，该干燥蒸汽通过直接从表面移出水，其速度基本上不留下液滴 用干燥蒸汽替换水后的表面。 优选地，干燥蒸气与水混溶并与水形成最小沸点共沸物，例如异丙醇。 然后用干燥，惰性，不可冷凝的气体如氮气吹扫干燥蒸气。 具有自动补充机构的蒸发器产生饱和的干燥蒸气，然后在接触表面之前将其蒸发至过热蒸汽，其优选地处于与蒸气相同的温度。 优选地，不通过蒸发除去液体，并且干燥发生在封闭的液压完全系统中，其不需要移动或处理漂洗和干燥步骤之间的表面。
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公开(公告)号：US4899767A
公开(公告)日：1990-02-13
申请号：US283465
申请日：1988-12-12
CPC分类号： B05C3/109 , B08B3/04 , B08B7/0092 , H01L21/67028 , B08B2203/002 , Y10S134/902
摘要： A system for the fluid treatment of semiconductor wafers includes a treatment vessel having opposed first and second ports, and means for holding wafers in a flow path therebetween. A flow segment comprising in sequence, a first vent, a first valve, an inlet, a second valve and a second vent extends between the first and the second port so as to constitute, together with the vessel, a closed fluid loop.A fluid delivery system for the delivery of a sequence of high purity treatment fluids to a treatment vessel includes a measuring tank having opposed ports and configured for plug flow between the ports, and a metering pump having its inlet connected to a said port for withdrawing metered amounts of fluid from the tank. A plurality of reservoirs of treatment fluid are each connected via a respective associated valve to one of the said ports. The tank is maintained hydraulically full, so that actuating the pump to withdraw a metered volume of fluid from the tank, and opening a valve associated with a selected treatment fluid draws the metered volume of the selected treatment fluid into the tank. Passive or non-mechanical means is provided for delivering the contents of the tank to a treatment vessel.A mixing tank may be provided, between the measuring tank and the treatment vessel. Mixing may be accomplished by bubbling a gas through the fluid held in the mixing tank.
摘要翻译： 用于半导体晶片的流体处理的系统包括具有相对的第一和第二端口的处理容器以及用于将晶片保持在其间的流动路径中的装置。 包括依次包括第一通气口，第一阀，入口，第二阀和第二通气的流动段在第一和第二端口之间延伸，以便与容器一起构成封闭的流体回路。 用于将一系列高纯度处理流体输送到处理容器的流体输送系统包括具有相对端口并被配置用于端口之间的塞子流的测量罐，以及计量泵，其入口连接到所述端口用于抽出计量 来自坦克的液体量。 处理流体的多个储存器各自经由相应的相关阀连接到所述端口中的一个。 油箱保持液压充满，从而致动泵以从罐中取出计量体积的流体，并且打开与所选处理流体相关联的阀将所选择的处理流体的计量体积吸入罐中。 提供被动或非机械装置用于将罐的内容物输送到处理容器。 可以在测量罐和处理容器之间设置混合罐。 可以通过将气体鼓泡通过保持在混合罐中的流体来实现混合。
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8.发明授权公开(公告)号：US06261845B1
公开(公告)日：2001-07-17
申请号：US09257488
申请日：1999-02-25
IPC分类号： G01N3508
CPC分类号： H01L21/67248 , G01N35/08 , G01N2033/0095 , H01L21/67057 , H01L21/67086 , Y10T436/12
摘要： The present invention provides systems and methods of determining the concentration of chemicals in a wet processing stream where the wet processing stream is formed from two or more liquid streams having known chemical concentrations. The concentration of chemicals in the wet processing stream are monitored by measuring the flow rates of the liquid streams during combination to form the wet processing stream, and calculating the concentrations of chemicals in the wet processing stream based on the flow rates and known chemical concentrations of the liquid streams. The present invention also provides systems and methods for controlling the wet processing of semiconductor substrates using the calculated concentrations in the wet processing stream. The methods and systems of the present invention are particularly useful when the semiconductor substrates are contacted with the wet processing stream in a single pass.
摘要翻译： 本发明提供了确定湿处理流中化学品浓度的系统和方法，其中湿处理流由具有已知化学浓度的两个或多个液体流形成。 通过在组合期间测量液体流的流量以形成湿处理流来监测湿处理流中的化学品浓度，并且基于流速和已知化学浓度计算湿处理流中化学品的浓度 液体流。 本发明还提供了使用湿处理流中计算的浓度来控制半导体衬底的湿法处理的系统和方法。 当半导体衬底在一次通过湿式处理流体接触时，本发明的方法和系统特别有用。
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公开(公告)号：US5383484A
公开(公告)日：1995-01-24
申请号：US93116
申请日：1993-07-16
IPC分类号： B08B3/12 , B05B17/06 , H01L21/00 , H01L21/304
CPC分类号： H01L21/67057 , Y10S134/902
摘要： A static megasonic cleaning system for cleaning multiple objects having an exterior surface includes a cassetteless vessel having an internal cavity for receiving the multiple objects and an array of megasonic transducers mounted on the vessel. Each transducer emits a focused beam of megasonic energy into the cavity and is arranged so that the emitted beams from all of the transducers collectively envelop the entire exterior surface of the objects. The transducers are staggered to avoid internal mounting structure within the vessel and avoid unnecessary dissipation of the megasonic energy.
摘要翻译： 用于清洁具有外表面的多个物体的静态兆声波清洁系统包括具有用于接收多个物体的内部空腔和安装在船舶上的兆声波换能器阵列的无盒式血管。 每个传感器将一个聚焦的兆声波能量束发射到空腔中，并被布置成使得来自所有传感器的发射光束共同地包围物体的整个外表面。 传感器交错，以避免容器内部的内部安装结构，并避免不必要的耗散兆声波能量。
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公开(公告)号：US4795497A
公开(公告)日：1989-01-03
申请号：US805203
申请日：1985-12-04
IPC分类号： C30B33/00 , B08B3/04 , C23G3/00 , C30B33/10 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/304 , H01L21/306 , B08B5/04
CPC分类号： H01L21/67023 , B08B3/04 , B08B2203/002 , Y10S134/902
摘要： A method for the fluid treatment of semiconductor wafers includes a treatment vessel having opposed first and second ports, and means for holding wafers in a flow path therebetween. A flow segment comprising in sequence, a first vent, a first valve, an inlet, a second valve and a second vent extends between the first and the second port so as to constitute, together with the vessel, a closed fluid loop.Preferably, the first and second ports are top and bottom ports, with a flow path extending vertically therebetween. The loop is maintained hydraulically full, whereby filling the vessel with a treatment fluid at the inlet, flushes a preceding treatment fluid from the system. A sequence of treatment fluids of differing densities may be provided at the inlet, and a vent and a valve are controlled to fill the loop from the bottom, in the event the treatment fluid is denser than the preceding fluid, or from the top, in the event the fluid is lighter than the preceding fluid. A circulation pump recirculates fluid within the loop.In another aspect, a fluid delivery system for the delivery of a sequence of high purity treatment fluids to a treatment vessel includes a measuring tank having opposed ports and configured for plug flow between the ports, and a metering pump having its inlet connected to a said port for withdrawing metered amounts of fluid from the tank. A plurality of reservoirs of treatment fluid are each connected via a respective associated valve to one of the said ports. The tank is maintained hydraulically full, so that actuating the pump to withdraw a metered volume of fluid from the tank, and opening a valve associated with a selected treatment fluid draws the metered volume of the selected treatment fluid into the tank. Passive or non-mechanical means is provided for delivering the contents of the tank to a treatment vessel.In a preferred embodiment, the opposed tank ports are top and bottom ports, and the treatment fluids are fluids of differing densities, with the fluids of lesser density each connected via an associated valve to the top port, and the fluids of greater density each connected via an associated valve to the bottom port, minimizing convective mixing during metered filling. A mixing tank may be provided, between the measuring tank and the treatment vessel. Mixing may be accomplished by bubbling a gas through the fluid held in the mixing tank.Methods according to the invention for cleaning semiconductor wafers are disclosed.
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