公开(公告)号：US20140027702A1

公开(公告)日：2014-01-30

申请号：US13781915

申请日：2013-03-01

申请人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

发明人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2481 ,  G11C2213/53 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/872 ,  H01L45/00 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

摘要： A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

摘要翻译： 公开了一种垂直集成的可重构和可编程二极管/存储器电阻（1D1R）和衬底上的薄膜晶体管/存储电阻（1T1R）结构。

公开(公告)号：US20200098932A1

公开(公告)日：2020-03-26

申请号：US16142300

申请日：2018-09-26

申请人： Travis W. LAJOIE ,  Abhishek SHARMA ,  Van H. LE ,  Chieh-Jen KU ,  Pei-Hua WANG ,  Jack T. KAVALIEROS ,  Bernhard SELL ,  Tahir GHANI ,  Juan ALZATE VINASCO

发明人： Travis W. LAJOIE ,  Abhishek SHARMA ,  Van H. LE ,  Chieh-Jen KU ,  Pei-Hua WANG ,  Jack T. KAVALIEROS ,  Bernhard SELL ,  Tahir GHANI ,  Juan ALZATE VINASCO

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L27/108

摘要： Embodiments herein describe techniques for a semiconductor device including a capacitor and a transistor above the capacitor. A contact electrode may be shared between the capacitor and the transistor. The capacitor includes a first plate above a substrate, and the shared contact electrode above the first plate and separated from the first plate by a capacitor dielectric layer, where the shared contact electrode acts as a second plate for the capacitor. The transistor includes a gate electrode above the substrate and above the capacitor; a channel layer separated from the gate electrode by a gate dielectric layer, and in contact with the shared contact electrode; and a source electrode above the channel layer, separated from the gate electrode by the gate dielectric layer, and in contact with the channel layer. The shared contact electrode acts as a drain electrode of the transistor. Other embodiments may be described and/or claimed.

公开(公告)号：US08884285B2

公开(公告)日：2014-11-11

申请号：US13781915

申请日：2013-03-01

申请人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

发明人： Yicheng Lu ,  Yang Zhang ,  Chieh-Jen Ku

IPC分类号： H01L29/10 ,  H01L27/24 ,  H01L45/00

CPC分类号： H01L27/2481 ,  G11C2213/53 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2454 ,  H01L27/2463 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/872 ,  H01L45/00 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616

摘要： A vertically integrated reconfigurable and programmable diode/memory resistor (1D1R) and thin film transistor/memory resistor (1T1R) structures built on substrates are disclosed.

摘要翻译： 公开了一种垂直集成的可重构和可编程二极管/存储器电阻（1D1R）和衬底上的薄膜晶体管/存储电阻（1T1R）结构。