摘要:
The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.
摘要:
A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60° C. and has no element hazardous to the environment.
摘要:
The invention provides a metal thermal interface material (TIM) with through-holes in its body and/or zigzags or wave shapes on its border, which is suitable for use at thermal interfaces of a thermal conduction path from an integrated circuit die to its associated heat sink in a packaged microelectronic component. The invention also includes a thermal module and a packaged microelectronic component including the metal thermal interface material.
摘要:
A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60° C. and has no element hazardous to the environment.
摘要:
A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144° C.
摘要:
A protection structure for preventing thermal dissipation and thermal runaway diffusion in battery system is provided. The protection structure includes a battery module casing and at least one composite heat conduction plate. There is a plurality of unit cells disposed in the battery module casing. The composite heat conduction plate is located within the battery module casing, contacted with the battery module casing, and sandwiched between at least two of the unit cells as a heat transmission medium between the cells and the casing to control heat transmission among the cells. The composite heat conduction plate is a multilayer anisotropic heat conduction structure constituted by at least one heat conduction layer and at least one heat insulation layer.
摘要:
A heat dissipation device for an electronic device includes a first heat dissipation element contacting the electronic device, wherein the material of the first heat dissipation element includes a composite material with high thermal conductivity comprising carbon fiber or porous graphite. The material with high thermal conductivity includes a fibrous structure and a matrix.
摘要:
Disclosed is a high thermally conductive composite, including a first composite and a second composite having a co-continuous and incompatible dual-phase manner. The first composite consists of glass fiber distributed into polyphenylene sulfide, and the second composite consists of carbon material distributed into polyethylene terephthalate. The carbon material includes graphite, graphene, carbon fiber, carbon nanotube, or combinations thereof.
摘要:
A protection structure for preventing thermal dissipation and thermal runaway diffusion in battery system is provided. The protection structure includes a battery module casing and at least one composite heat conduction plate. There is a plurality of unit cells disposed in the battery module casing. The composite heat conduction plate is located within the battery module casing, contacted with the battery module casing, and sandwiched between at least two of the unit cells as a heat transmission medium between the cells and the casing to control heat transmission among the cells. The composite heat conduction plate is a multilayer anisotropic heat conduction structure constituted by at least one heat conduction layer and at least one heat insulation layer.
摘要:
A melting temperature adjustable metal thermal interface material (TIM) and a packaged semiconductor including thereof are provided. The metal TIM includes about 20-98 wt % of In, about 0.03-4 wt % of Ga, and at least one element of Bi, Sn, Ag and Zn. The metal TIM has an initial melting temperature between about 60-144° C.