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    Lithographic processing method and device manufactured thereby
    1.
    发明授权
    Lithographic processing method and device manufactured thereby 有权
    由此制造平版印刷加工方法和装置

    公开(公告)号：US07374869B2

    公开(公告)日：2008-05-20

    申请号：US10830418

    申请日：2004-04-23

    申请人： Carsten Andreas Kohler ,  Jan Bernard Plechelmus Van Schoot

    发明人： Carsten Andreas Kohler ,  Jan Bernard Plechelmus Van Schoot

    IPC分类号： G03F7/20 ,  G03F1/00 ,  G03F7/26

    CPC分类号： G03F7/70466 ,  G03F1/70 ,  G03F7/40

    摘要： A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.

    摘要翻译： 用于向装置层提供图案的平版印刷双曝光处理方法包括以下步骤：在第一和第二曝光步骤之前以预选的扩张距离扩展第一掩模图案和第二掩模图案的每个特征，抗蚀处理曝光的辐射敏感 层，以提供对应于所述图案的抗蚀剂处理特征，由此每个抗蚀剂处理特征相对于其标称尺寸扩大，并且通过对所述抗蚀剂施加辅助抗蚀剂处理，在预选的收缩距离上收缩所述抗蚀剂处理的特征 处理的功能。