公开(公告)号：US09455356B2

公开(公告)日：2016-09-27

申请号：US11363800

申请日：2006-02-28

Applicant: Mrinal Das ,  Brett Hull ,  Joseph Sumakeris

Inventor： Mrinal Das ,  Brett Hull ,  Joseph Sumakeris

IPC: H01L29/868 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/868 ,  H01L29/1608 ,  H01L29/6606

Abstract: Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.

Abstract translation: 提供具有约3.0kV至约10.0kV的反向阻断电压（VR）和小于约4.3V的正向电压（VF）的碳化硅（SiC）PiN二极管。

公开(公告)号：US20100221924A1

公开(公告)日：2010-09-02

申请号：US12776831

申请日：2010-05-10

Applicant: Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

Inventor： Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

IPC: H01L21/04

CPC classification number: H01L29/7802 ,  H01L21/02236 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.

Abstract translation: 在碳化硅上形成氧化物层的方法包括在碳化硅层上热氧化氧化物层，并在含有NO的环境中在大于1175℃的温度下退火氧化物层。氧化物层可以在NO 可以涂覆有碳化硅的碳化硅管。 为了形成氧化物层，可以将预氧化物层在干燥的O 2中在碳化硅层上热生长，并且预氧化物层可以在潮湿的氧气中再次氧化。

公开(公告)号：US20080233285A1

公开(公告)日：2008-09-25

申请号：US11486752

申请日：2006-07-14

Applicant: Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

Inventor： Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

IPC: C23C16/00 ,  B05D3/02

CPC classification number: H01L29/7802 ,  H01L21/02236 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.

Abstract translation: 在碳化硅上形成氧化物层的方法包括在碳化硅层上热氧化氧化物层，并在含有NO的环境中在大于1175℃的温度下退火氧化物层。氧化物层可以在NO 可以涂覆有碳化硅的碳化硅管。 为了形成氧化物层，预氧化物层可以在干燥的O 2 N 2中在碳化硅层上热生长，并且预氧化物层可以在湿O 2中再氧化， SUB>。

公开(公告)号：US20070200115A1

公开(公告)日：2007-08-30

申请号：US11363800

申请日：2006-02-28

Applicant: Mrinal Das ,  Brett Hull ,  Joseph Sumakeris

Inventor： Mrinal Das ,  Brett Hull ,  Joseph Sumakeris

IPC: H01L31/0312

CPC classification number: H01L29/868 ,  H01L29/1608 ,  H01L29/6606

Abstract: Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (VR) from about 3.0 kV to about 10.0 kV and a forward voltage (VF) of less than about 4.3 V.

Abstract translation: 提供具有约3.0kV至约10.0kV的反向阻断电压（V SUB R N）的碳化硅 比约4.3 V.

公开(公告)号：US08536066B2

公开(公告)日：2013-09-17

申请号：US12776831

申请日：2010-05-10

Applicant: Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

Inventor： Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

IPC: H01L21/04

CPC classification number: H01L29/7802 ,  H01L21/02236 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.

Abstract translation: 在碳化硅上形成氧化物层的方法包括在碳化硅层上热氧化氧化物层，并在含有NO的环境中在大于1175℃的温度下退火氧化物层。氧化物层可以在NO 可以涂覆有碳化硅的碳化硅管。 为了形成氧化物层，可以将预氧化物层在干燥的O 2中在碳化硅层上热生长，并且预氧化物层可以在潮湿的氧气中再次氧化。

公开(公告)号：US07727904B2

公开(公告)日：2010-06-01

申请号：US11486752

申请日：2006-07-14

Applicant: Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

Inventor： Mrinal K. Das ,  Brett Hull ,  Sumi Krishnaswami

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L29/7802 ,  H01L21/02236 ,  H01L21/049 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

Abstract: Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.

Abstract translation: 在碳化硅上形成氧化物层的方法包括在碳化硅层上热氧化氧化物层，并在含有NO的环境中在大于1175℃的温度下退火氧化物层。氧化物层可以在NO 可以涂覆有碳化硅的碳化硅管。 为了形成氧化物层，可以将预氧化物层在干燥的O 2中在碳化硅层上热生长，并且预氧化物层可以在潮湿的氧气中再次氧化。