公开(公告)号：US06780666B1

公开(公告)日：2004-08-24

申请号：US10635580

申请日：2003-08-07

申请人： Brent A. McClure

发明人： Brent A. McClure

IPC分类号： H01L2100

CPC分类号： H04N5/3559 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/148 ,  H04N5/37452

摘要： A pixel cell having two capacitors connected in series where each capacitor has a capacitance approximating that at of the periphery capacitors and such that the effective capacitance of the series capacitors is smaller than that of each of the periphery capacitors. The series-connected capacitors are coupled to the floating diffusion (FD) region for receiving “surplus” charge from the FD region during saturation conditions.

摘要翻译： 具有串联连接的两个电容器的像素单元，其中每个电容器具有接近外围电容器的电容，并且串联电容器的有效电容小于每个外围电容器的有效电容。 串联电容器耦合到浮动扩散（FD）区域，用于在饱和条件期间从FD区域接收“剩余”电荷。

公开(公告)号：US5930639A

公开(公告)日：1999-07-27

申请号：US631290

申请日：1996-04-08

申请人： Paul Schuele ,  Brent A. McClure ,  Thomas M. Graettinger

发明人： Paul Schuele ,  Brent A. McClure ,  Thomas M. Graettinger

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/10852

摘要： Disclosed is a method for precision etching of films on in-process integrated circuit wafers. The method is particularly useful for etching films comprising noble metals and is advantageous for use in constructing capacitor electrodes. The method comprises depositing a titanium nitride hard mask over the film to be etched, and thereafter patterning the titanium nitride hard mask with an etchant which is selective to titanium nitride and unselective to the underlying film. The film is then etched using either ion beam milling or reactive ion etching with oxygen as an etching agent. Both etches are highly selective to titanium nitride such that the titanium nitride hard mask can be very thin compared to the film. The presence of the titanium nitride hard mask reduces redeposition problems. Critical dimension control and substantially vertical sidewalls also result from the use of the titanium nitride hard mask.

摘要翻译： 公开了一种在过程中集成电路晶片上精细蚀刻膜的方法。 该方法对于蚀刻包含贵金属的膜特别有用，并且有利于用于构造电容器电极。 该方法包括在待蚀刻的膜上沉积氮化钛硬掩模，然后用对氮化钛有选择性并且对下面的膜不选择的蚀刻剂对氮化钛硬掩模进行图案化。 然后用氧离子束研磨或反应离子蚀刻作为蚀刻剂蚀刻该膜。 两种蚀刻对氮化钛具有高选择性，使得与膜相比，氮化钛硬掩模可以非常薄。 氮化钛硬掩模的存在减少再沉积问题。 关键尺寸控制和基本上垂直的侧壁也是由于使用氮化钛硬掩模而产生的。

公开(公告)号：US07015528B2

公开(公告)日：2006-03-21

申请号：US10807952

申请日：2004-03-23

申请人： Brent A. McClure

发明人： Brent A. McClure

IPC分类号： H01L29/72

CPC分类号： H01L27/10888 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76895 ,  H01L27/10811 ,  H01L28/84 ,  H01L28/91

摘要： A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the first portion, then the digit line runner is formed to contact the second plug portion. A structure resulting from the process is also described.

公开(公告)号：US5792593A

公开(公告)日：1998-08-11

申请号：US905785

申请日：1997-08-13

申请人： Brent A. McClure ,  Daryl C. New

发明人： Brent A. McClure ,  Daryl C. New

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/3213 ,  H01L27/108 ,  G03F7/36

CPC分类号： H01L28/40 ,  H01L21/32131 ,  H01L28/91

摘要： A method for forming a structure by redepositing a starting material on sidewalls of a foundation during an etch of the starting material.

公开(公告)号：US06709945B2

公开(公告)日：2004-03-23

申请号：US09765885

申请日：2001-01-16

申请人： Brent A. McClure

发明人： Brent A. McClure

IPC分类号： H01L2176

CPC分类号： H01L27/10888 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76895 ,  H01L27/10811 ,  H01L28/84 ,  H01L28/91

摘要： A method used during the formation of a semiconductor device comprises forming a first portion of a digit line contact plug before forming storage capacitors. Subsequent to forming storage capacitors, a second portion of the digit line plug is formed to contact the first portion, then the digit line runner is formed to contact the second plug portion. A structure resulting from the process is also described.

摘要翻译： 在形成半导体器件期间使用的方法包括在形成存储电容器之前形成数字线接触插塞的第一部分。 在形成存储电容器之后，数字线插头的第二部分形成为接触第一部分，然后形成数字线路转接器以接触第二插头部分。 还描述了由该方法产生的结构。

公开(公告)号：US06586816B2

公开(公告)日：2003-07-01

申请号：US09480905

申请日：2000-01-11

申请人： Brent A. McClure ,  Daryl C. New

发明人： Brent A. McClure ,  Daryl C. New

IPC分类号： H01L2900

CPC分类号： H01L28/90

摘要： Semiconductor structures formed using redeposition of an etchable layer. A starting material is etched and redeposited during the etch on a sidewall of a foundation. The foundation may be removed or may form an integral part of the structure. The starting material may contain one or more layers of material. The structures are adapted for a variety of capacitor structures.

摘要翻译： 使用可蚀刻层再沉积形成的半导体结构。 在蚀刻期间在基底的侧壁上蚀刻并重新沉积起始材料。 基础可以被去除或可以形成结构的组成部分。 起始材料可以包含一层或多层材料。 这些结构适用于各种电容器结构。

公开(公告)号：US07440255B2

公开(公告)日：2008-10-21

申请号：US10624340

申请日：2003-07-21

申请人： Brent A. McClure ,  Casey R. Kurth ,  Shenlin Chen ,  Debra K. Gould ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Fred D. Fishburn ,  Hongmei Wang

发明人： Brent A. McClure ,  Casey R. Kurth ,  Shenlin Chen ,  Debra K. Gould ,  Lyle D. Breiner ,  Er-Xuan Ping ,  Fred D. Fishburn ,  Hongmei Wang

IPC分类号： H01G4/005

CPC分类号： H01L28/84 ,  H01L27/0805 ,  H01L27/10867 ,  H01L27/10873 ,  H01L28/75 ,  H01L28/91

摘要： A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.

摘要翻译： 电容器结构包括第一电极和第一电极与支撑电容器结构的表面之间的层。 与其他相同的电容器结构相比，电容器结构可以表现出较低的RC时间常数。 或者或另外，第一电极可以包含Si，并且该层可以限制Si对第一电极和支撑表面之间的金属硅化物材料的形成有贡献。 该层可以是氮化物层，并且可以是导电的或绝缘的。 当导电时，该层可以表现出大于第一电极的第二电导率的第一电导率。 电容器结构可用于存储器件中。

公开(公告)号：US6027860A

公开(公告)日：2000-02-22

申请号：US103202

申请日：1998-06-23

申请人： Brent A. McClure ,  Daryl C. New

发明人： Brent A. McClure ,  Daryl C. New

IPC分类号： G03F7/36 ,  H01L27/108 ,  H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/90

摘要： A method for forming a structure by redepositing a starting material on sidewalls of a foundation during an etch of the starting material.

摘要翻译： 一种通过在起始材料的蚀刻期间将起始材料重新沉积在基础的侧壁上来形成结构的方法。

公开(公告)号：US08129079B2

公开(公告)日：2012-03-06

申请号：US12003013

申请日：2007-12-19

申请人： Earnest Hodge ,  Brent A. McClure

发明人： Earnest Hodge ,  Brent A. McClure

IPC分类号： G02B5/20

CPC分类号： G02B5/223 ,  G02B5/201 ,  G02F1/133516

摘要： A method of fabricating a color filter array including the removal of unwanted residual color pigments. A substrate is coated with a colored photoresist layer. The photoresist layer is patterned. The substrate is then cured. A descumming step is performed after the curing step to remove the residual pigments without causing significant damage to the remaining color filter array pattern. In another embodiment, the descumming process may be used to control or manipulate the thickness of the color filter array. In another embodiment, the descumming process may be used to modify the surface of the color filter array to be more desirable for the formation of microlenses or other layers over the color filter array.

摘要翻译： 一种制造滤色器阵列的方法，包括去除不需要的残留颜色颜料。 衬底被涂覆有着色光致抗蚀剂层。 对光致抗蚀剂层进行图案化。 然后将基底固化。 在固化步骤之后进行除氧步骤以除去残留的颜料，而不会对剩余的滤色器阵列图案造成显着的损害。 在另一个实施例中，除尘过程可用于控制或操纵滤色器阵列的厚度。 在另一个实施例中，除去过程可以用于修改滤色器阵列的表面，以便在滤色器阵列上形成微透镜或其他层更理想。

公开(公告)号：US07326503B2

公开(公告)日：2008-02-05

申请号：US11207814

申请日：2005-08-22

申请人： Earnest Hodge ,  Brent A. McClure

发明人： Earnest Hodge ,  Brent A. McClure

IPC分类号： G02B5/20

CPC分类号： G02B5/223 ,  G02B5/201 ,  G02F1/133516

摘要： A method of fabricating a color filter array including the removal of unwanted residual color pigments. A substrate is coated with a colored photoresist layer. The photoresist layer is patterned. The substrate is then cured. A descumming step is performed after the curing step to remove the residual pigments without causing significant damage to the remaining color filter array pattern. In another embodiment, the descumming process may be used to control or manipulate the thickness of the color filter array. In another embodiment, the descumming process may be used to modify the surface of the color filter array to be more desirable for the formation of microlenses or other layers over the color filter array.

摘要翻译： 一种制造滤色器阵列的方法，包括去除不需要的残留颜色颜料。 衬底被涂覆有着色光致抗蚀剂层。 对光致抗蚀剂层进行图案化。 然后将基底固化。 在固化步骤之后进行除氧步骤以除去残留的颜料，而不会对剩余的滤色器阵列图案造成显着的损害。 在另一个实施例中，除尘过程可用于控制或操纵滤色器阵列的厚度。 在另一个实施例中，除去过程可以用于修改滤色器阵列的表面，以便在滤色器阵列上形成微透镜或其他层更理想。