公开(公告)号：US20080268564A1

公开(公告)日：2008-10-30

申请号：US12123248

申请日：2008-05-19

申请人： Atsushi Yasuno

发明人： Atsushi Yasuno

IPC分类号： H01L31/18 ,  H01T14/00

CPC分类号： H01L31/20 ,  C23C16/509 ,  C23C16/545 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/18 ,  Y02E10/50

摘要： A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

公开(公告)号：US20080216748A1

公开(公告)日：2008-09-11

申请号：US12123920

申请日：2008-05-20

申请人： Atsushi Yasuno

发明人： Atsushi Yasuno

IPC分类号： C23C16/44

CPC分类号： H01L31/20 ,  C23C16/509 ,  C23C16/545 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/18 ,  Y02E10/50

摘要： A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

摘要翻译： 根据本发明的形成沉积膜的方法包括：将起始气体引入反应容器中的放电空间; 并且施加电力以产生放电以分解起始气体，其中当在施加有第一电力的电极处产生的自偏压值达到预设阈值时，将比第一电力高的第二电力施加到 电极将自偏置电压值改变为绝对值大于阈值的另一自偏压值，形成沉积膜。

公开(公告)号：US07445952B2

公开(公告)日：2008-11-04

申请号：US11197512

申请日：2005-08-05

申请人： Takaharu Kondo ,  Hideo Tamura ,  Atsushi Yasuno ,  Noboru Toyama ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Akiya Nakayama ,  Yusuke Miyamoto

发明人： Takaharu Kondo ,  Hideo Tamura ,  Atsushi Yasuno ,  Noboru Toyama ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Akiya Nakayama ,  Yusuke Miyamoto

IPC分类号： H01L21/00 ,  H01L31/18 ,  B05D5/12

CPC分类号： H01L31/02168 ,  H01L31/056 ,  Y02E10/52

摘要： A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate layer on a base member, and a second step of forming a metal layer on the intermediate layer, the adhesion of the metal layer to the base member being lower than that of the intermediate layer, the reflectance of the metal layer being higher than that of the intermediate layer. The rate of formation of the metal layer is increased at an intermediate stage in the second step. The laminate thereby formed has improved characteristics and is capable of maintaining improved reflection characteristics and adhesion even under high-temperature and high-humidity conditions or during long-term use.

摘要翻译： 提供一种形成层压体的方法和使用该层压体制造光伏器件的方法。 层压体形成方法包括在基材上形成中间层的第一工序和在中间层上形成金属层的第二工序，金属层与基材的密合性比中间层低 ，金属层的反射率高于中间层的反射率。 在第二步骤的中间阶段，金属层的形成速率增加。 由此形成的层压件具有改进的特性，并且即使在高温和高湿度条件下或在长期使用中也能够保持改进的反射特性和粘附性。

公开(公告)号：US06911594B2

公开(公告)日：2005-06-28

申请号：US10449104

申请日：2003-06-02

申请人： Atsushi Yasuno

发明人： Atsushi Yasuno

IPC分类号： H01L31/04 ,  H01L31/028 ,  H01L31/075 ,  H01L31/068

CPC分类号： H01L31/076 ,  H01L31/028 ,  Y02E10/547 ,  Y02E10/548

摘要： A photovoltaic device including a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a carbon atom concentration has a maximum peak in the vicinity of a p/n interface between the plurality of unit devices.

摘要翻译： 一种包括堆叠的多个单元器件的光电器件，每个单位器件包括硅基非单晶半导体材料并具有pn或pin结构，其中氧原子浓度和/或碳原子浓度具有最大值 在多个单元设备之间的ap / n接口附近的峰值。

公开(公告)号：US07514342B2

公开(公告)日：2009-04-07

申请号：US11133187

申请日：2005-05-20

申请人： Atsushi Yasuno

发明人： Atsushi Yasuno

IPC分类号： H01L21/205 ,  C30B29/06 ,  C30B28/14

CPC分类号： H01L31/20 ,  C23C16/509 ,  C23C16/545 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/18 ,  Y02E10/50

摘要： A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

摘要翻译： 根据本发明的形成沉积膜的方法包括：将起始气体引入反应容器中的放电空间; 并且施加电力以产生放电以分解起始气体，其中当在施加有第一电力的电极处产生的自偏压值达到预设阈值时，将比第一电力高的第二电力施加到 电极将自偏置电压值改变为绝对值大于阈值的另一自偏压值，形成沉积膜。

公开(公告)号：US06273955B1

公开(公告)日：2001-08-14

申请号：US08704138

申请日：1996-08-28

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

摘要翻译： 一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理 在基板上。

公开(公告)号：US5589007A

公开(公告)日：1996-12-31

申请号：US523169

申请日：1995-09-05

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

IPC分类号： H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

摘要翻译： 光电元件包括​​第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层， 通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

公开(公告)号：US20050260831A1

公开(公告)日：2005-11-24

申请号：US11133187

申请日：2005-05-20

申请人： Atsushi Yasuno

发明人： Atsushi Yasuno

IPC分类号： C23C16/52 ,  C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L31/04

CPC分类号： H01L31/20 ,  C23C16/509 ,  C23C16/545 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/18 ,  Y02E10/50

摘要： A method of forming a deposited film according to the present invention includes: introducing a starting gas into a discharge space in a reaction vessel; and applying electric power to generate discharge to decompose the starting gas, wherein, when a self-bias voltage value which is generated at an electrode applied with first electric power reaches a preset threshold, second electric power higher than the first electric power is applied to the electrode to change the self-bias voltage value to another self-bias voltage value larger in absolute value than the threshold, and the deposited film is formed.

摘要翻译： 根据本发明的形成沉积膜的方法包括：将起始气体引入反应容器中的放电空间; 并且施加电力以产生放电以分解起始气体，其中当在施加有第一电力的电极处产生的自偏压值达到预设阈值时，将比第一电力高的第二电力施加到 电极将自偏置电压值改变为绝对值大于阈值的另一自偏压值，形成沉积膜。

公开(公告)号：US06350489B1

公开(公告)日：2002-02-26

申请号：US08768609

申请日：1996-12-18

申请人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

发明人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

IPC分类号： C23C1654

CPC分类号： C23C16/545

摘要： To provide a deposited-film forming process and a deposited-film forming apparatus that may cause no scratches on the film forming surface to improve yield and enable stable discharge to thereby continuously form deposited films having uniform quality and uniform thickness, deposited films are formed by lengthwise continuously transporting a belt-like substrate so as to form a part of a discharge space, wherein the substrate is transported while bringing the transverse sectional shape of the substrate which forms a part of the discharge space into a curved shape by a roller.

摘要翻译： 为了提供沉积膜形成工艺和沉积膜形成装置，其可以在膜形成表面上不产生划痕以提高产量并且能够稳定地放电，从而连续地形成具有均匀质量和均匀厚度的沉积膜，沉积膜通过 纵向连续输送带状基板以形成放电空间的一部分，其中基板被输送，同时通过辊将构成放电空间的一部分的基板的横截面形状带入弯曲形状。

公开(公告)号：US06338872B1

公开(公告)日：2002-01-15

申请号：US09337557

申请日：1999-06-22

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.

摘要翻译： 使用具有多个真空室的设备来描述成膜方法，所述多个真空室经由连接彼此连通，其中所述设备具有一个或多个可拆卸的处理室，并且其中所述方法包括在带状上连续形成多个膜 处理室内的基材，同时将基材连续移动通过治疗室。 作为成膜方法的一部分，在形成膜预定时间之后，在所述真空室内的处理室被更换。