公开(公告)号：US07193544B1

公开(公告)日：2007-03-20

申请号：US11220712

申请日：2005-09-08

申请人： Michael M. Fitelson ,  Aaron Pesetski ,  Alfred P. Turley

发明人： Michael M. Fitelson ,  Aaron Pesetski ,  Alfred P. Turley

IPC分类号： H03M3/00

CPC分类号： H03M3/396 ,  H03M3/388 ,  H03M3/468

摘要： An apparatus performs adaptive analog-to-digital conversion. The apparatus according to one embodiment comprises a frequency modulator unit for changing an input analog signal into a modulated analog signal with a frequency spectrum in a bandwidth of interest, a parallel delta sigma conversion unit operatively connected to the frequency modulator unit, the parallel delta sigma conversion unit converting the modulated analog signal into a digital signal, and a controller operatively connected to the frequency modulator unit and the parallel delta sigma conversion unit, the controller adjusting at least one parameter relating to a frequency characteristic of the frequency modulator unit and/or the parallel delta sigma conversion unit.

摘要翻译： 一种装置执行自适应模数转换。 根据一个实施例的装置包括：频率调制器单元，用于将输入的模拟信号改变成具有感兴趣带宽中的频谱的经调制的模拟信号，可操作地连接到频率调制器单元的并行ΔΣ转换单元，并行Δ西格玛 转换单元将调制的模拟信号转换为数字信号，以及可操作地连接到频率调制器单元和并行ΔΣ转换单元的控制器，所述控制器调整与频率调制器单元的频率特性相关的至少一个参数和/或 并行ΔΣ转换单元。

公开(公告)号：US4409483A

公开(公告)日：1983-10-11

申请号：US194720

申请日：1980-10-07

申请人： Alfred P. Turley

发明人： Alfred P. Turley

IPC分类号： G06K7/10 ,  H01L27/148 ,  H04N5/33 ,  H04N5/335 ,  H04N5/376 ,  H01J31/49 ,  G01J1/00 ,  G01T1/24 ,  H01L27/14

CPC分类号： H01L27/14875 ,  H04N5/33 ,  H04N5/335

摘要： Apparatus for generating an electrical signal representative of differences in radiant energy of adjacent pixel points of a scene is described incorporating a first and second sensor for sensing radiant energy and a differential amplifier for taking the difference of the output signals of the sensors.The invention overcomes the problem of storing and transferring large signals from the sensors by transferring the difference signals only.

摘要翻译： 描述了用于产生表示场景的相邻像素点的辐射能差异的电信号的装置，其包括用于感测辐射能的第一和第二传感器和用于获取传感器的输出信号的差的差分放大器。 本发明克服了仅通过传送差分信号从传感器存储和传送大信号的问题。

公开(公告)号：US5110755A

公开(公告)日：1992-05-05

申请号：US460703

申请日：1990-01-04

申请人： Li-Shu Chen ,  Rathindra N. Ghoshtagore ,  Alfred P. Turley ,  Louis A. Yannone

发明人： Li-Shu Chen ,  Rathindra N. Ghoshtagore ,  Alfred P. Turley ,  Louis A. Yannone

IPC分类号： H01L21/306 ,  H01L21/762

CPC分类号： H01L21/76264 ,  H01L21/306 ,  H01L21/7627

摘要： A process for forming an insulating layer of silicon dioxide in a silicon substrate that surrounds and electrically insulates a semiconductor device is disclosed herein. The process comprises the steps of forming a recess on the outer surface of the silicon substrate that encompasses the site of the semiconductor device by photo-resist patterned reactive ion etching, and then removing silicon on the surface of the resulting recess whose crystal structure has been damaged by the reactive ion etching. Next, dopant atoms are selectively deposited on the surface of the recess so that the surface of the recess might be rendered into a porous layer of silicon when immersed in hydrogen fluoride and subjected to an electrical current. Prior to the porousification step, silicon is epitaxially grown within the walls of the recess to form the site for a semiconductor device. The substrate is then immersed in hydrogen fluoride while a current is conducted through it in order to porousify the silicon between the device island and the rest of the substrate. Finally, the substrate is thermally oxidized in order to render the porous layer of silicon into a insulating layer of silicon dioxide. The provision of such individual insulating layers around each of the devices on the substrate allows the manufacture of a high density and radiation hard semiconductor array that is not susceptible to electrical current leakage between components.

摘要翻译： 本文公开了一种在半导体器件中包围并电绝缘的硅衬底中形成二氧化硅绝缘层的工艺。 该方法包括以下步骤：在硅衬底的外表面上形成通过光致抗蚀剂图案化反应离子蚀刻包围半导体器件的位置的凹槽，然后在晶体结构已经形成的凹槽的表面上除去硅 被反应离子蚀刻损坏。 接下来，掺杂剂原子被选择性地沉积在凹部的表面上，使得当浸入氟化氢中并且经受电流时，凹槽的表面可能变成多孔硅层。 在多孔化步骤之前，在凹槽的壁内外延生长硅以形成半导体器件的部位。 然后将衬底浸入氟化氢中，同时通过电流进行电流以使器件岛和衬底的其余部分之间的硅多孔化。 最后，将基底热氧化，以使硅的多孔层成为二氧化硅的绝缘层。 在衬底上的每个器件周围提供这些单独的绝缘层允许制造不易受组件之间的电流泄漏敏感的高密度和辐射硬的半导体阵列。

公开(公告)号：US4488163A

公开(公告)日：1984-12-11

申请号：US225900

申请日：1981-01-19

申请人： Nathan Bluzer ,  Alfred P. Turley ,  Francis J. Kub ,  Gerald M. Borsuk

发明人： Nathan Bluzer ,  Alfred P. Turley ,  Francis J. Kub ,  Gerald M. Borsuk

IPC分类号： H01L27/146 ,  H01L31/11 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06 ,  H01L31/00

CPC分类号： H01L27/14654 ,  H01L27/14681 ,  H01L31/1105

摘要： An array of photodetectors is described incorporating a PNP vertical structure in a monosilicon substrate with individual photodetectors optically and electrically isolated from one another by open or oxide filled grooves. Both PN junctions of the PNP structure or originally reverse biased with one junction acting as the photodetector may operate in the forward biased photovoltaic mode with high radiant energy intensity. The minority carriers injected into the N region are absorbed by the other PN junction providing base-collector transistor action to prevent blooming.

摘要翻译： 描述了一组光电检测器，其在单晶硅衬底中结合了PNP垂直结构，其中各个光电探测器通过开放或氧化物填充的沟槽彼此光学和电隔离。 PNP结构的两个PN结或者原来用作为光电检测器的一个结点反向偏置的PN结可以在具有高辐射能量强度的正向偏置光伏模式中操作。 注入N区的少数载流子被另一个PN结吸收，从而提供基极集电极晶体管的作用以防止起霜。