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1.发明申请POLISHING PAD WITH CONCENTRIC OR APPROXIMATELY CONCENTRIC POLYGON GROOVE PATTERN 审中-公开具有浓度或近似浓度的聚合物图案的抛光垫公开(公告)号：US20160023322A1
公开(公告)日：2016-01-28
申请号：US14875513
申请日：2015-10-05
CPC分类号： B24B37/26 , B24D11/001
摘要： Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.
摘要翻译： 描述具有同心或近似同心的多边形凹槽图案的抛光垫。 还描述了制造具有同心或近似同心的多边形凹槽图案的抛光垫的方法。
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2.发明授权Polishing pad with concentric or approximately concentric polygon groove pattern 有权具有同心或近似同心的多边形凹槽图案的抛光垫公开(公告)号：US09211628B2
公开(公告)日：2015-12-15
申请号：US13014630
申请日：2011-01-26
CPC分类号： B24B37/26 , B24D11/001
摘要： Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.
摘要翻译： 描述具有同心或近似同心的多边形凹槽图案的抛光垫。 还描述了制造具有同心或近似同心的多边形凹槽图案的抛光垫的方法。
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公开(公告)号：US08628384B2
公开(公告)日：2014-01-14
申请号：US12895465
申请日：2010-09-30
IPC分类号： B24D3/28
CPC分类号： B24D11/001 , B24B37/013 , B24B37/205 , B24B49/105
摘要： Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.
摘要翻译： 描述了使用涡流端点检测来研磨半导体衬底的抛光垫。 还描述了使用涡流端点检测来制造用于研磨半导体衬底的抛光垫的方法。
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4.发明授权Method of fabricating a polishing pad with an end-point detection region for eddy current end-point detection 有权制造具有用于涡流端点检测的端点检测区域的抛光垫的方法公开(公告)号：US08439994B2
公开(公告)日：2013-05-14
申请号：US12895529
申请日：2010-09-30
CPC分类号： B24B37/205 , B24B37/26 , B24D18/0009
摘要： Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.
摘要翻译： 描述了使用涡流端点检测来制造用于抛光半导体衬底的端点检测区域的抛光垫的方法。
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5.发明申请POLISHING PAD WITH CONCENTRIC OR APPROXIMATELY CONCENTRIC POLYGON GROOVE PATTERN 有权具有浓度或近似浓度的聚合物图案的抛光垫公开(公告)号：US20120190281A1
公开(公告)日：2012-07-26
申请号：US13014630
申请日：2011-01-26
CPC分类号： B24B37/26 , B24D11/001
摘要： Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.
摘要翻译： 描述具有同心或近似同心的多边形凹槽图案的抛光垫。 还描述了制造具有同心或近似同心的多边形凹槽图案的抛光垫的方法。
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6.发明申请METHOD OF FABRICATING A POLISHING PAD WITH AN END-POINT DETECTION REGION FOR EDDY CURRENT END-POINT DETECTION 有权用于EDDY电流端点检测的具有端点检测区域的抛光垫的制造方法公开(公告)号：US20120079773A1
公开(公告)日：2012-04-05
申请号：US12895529
申请日：2010-09-30
CPC分类号： B24B37/205 , B24B37/26 , B24D18/0009
摘要： Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.
摘要翻译： 描述了使用涡流端点检测来制造用于抛光半导体衬底的端点检测区域的抛光垫的方法。
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公开(公告)号：US20150273656A1
公开(公告)日：2015-10-01
申请号：US14736568
申请日：2015-06-11
申请人： William C. Allison , Diane Scott , Paul Andre Lefevre , James P. LaCasse , Alexander William Simpson
发明人： William C. Allison , Diane Scott , Paul Andre Lefevre , James P. LaCasse , Alexander William Simpson
CPC分类号： B24B37/24 , B24B37/16 , B24B37/205 , B24B37/22 , B24B37/26 , B24D11/001 , B24D18/0009
摘要： Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.
摘要翻译： 描述了具有基础层和抛光表面层的抛光垫。 在一个实例中，用于抛光衬底的抛光垫包括基础层。 抛光表面层结合到基础层。 还描述了制造具有结合到基础层的抛光表面层的抛光垫的方法。
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公开(公告)号：US20150273655A1
公开(公告)日：2015-10-01
申请号：US14732497
申请日：2015-06-05
申请人： William C. Allison , Diane Scott , Paul Andre Lefevre , James P. LaCasse , Alexander William Simpson
发明人： William C. Allison , Diane Scott , Paul Andre Lefevre , James P. LaCasse , Alexander William Simpson
CPC分类号： B24B37/24 , B24B37/16 , B24B37/205 , B24B37/22 , B24B37/26 , B24D11/001 , B24D18/0009
摘要： Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.
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公开(公告)号：US20120083191A1
公开(公告)日：2012-04-05
申请号：US12895465
申请日：2010-09-30
CPC分类号： B24D11/001 , B24B37/013 , B24B37/205 , B24B49/105
摘要： Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.
摘要翻译： 描述了使用涡流端点检测来研磨半导体衬底的抛光垫。 还描述了使用涡流端点检测来制造用于研磨半导体衬底的抛光垫的方法。
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公开(公告)号：US07011574B2
公开(公告)日：2006-03-14
申请号：US10996669
申请日：2004-11-24
IPC分类号： B24B1/00
CPC分类号： B24B37/245 , B24D3/34 , H01L21/31053 , H01L21/3212
摘要： A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.
摘要翻译： 提供聚电解质分配抛光垫，其制造方法和抛光方法，例如化学机械抛光（CMP），诸如半导体晶片的基板。 衬垫可用于晶片上的氧化物或金属层的CMP平坦化。 该垫具有含有均匀分布在其中的研磨颗粒和水溶性可电离电解质物质如聚电解质的可侵蚀粘合剂材料的抛光层，使得在抛光过程中，粘结剂材料逐渐侵蚀，磨料颗粒和电解质物质逐渐释放直接接触 与基材。 该电解质物质抑制了在上部氧化物或金属层下的作为停止层的氮化硅的CMP去除，使得上层被选择性地抛光，并且CMP停止在停止层上，使其保持不变。
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