公开(公告)号：US20250069911A1

公开(公告)日：2025-02-27

申请号：US18812488

申请日：2024-08-22

Applicant: ASM IP Holding B.V.

Inventor： Lucian Jdira ,  Johannes Maria Theodorus van Eijden ,  Theodorus G.M. Oosterlaken ,  Julien Laurentius Antonius Maria Keijser ,  Radko Bankras ,  Herbert Terhorst

IPC: H01L21/67 ,  H01L21/673

Abstract: An apparatus for processing a plurality of substrates is provided. The apparatus may have a process tube creating a process chamber and a door configured to support substrates in the process chamber and to seal the process chamber. The apparatus may have a gas injector to provide process gas into the process chamber. The gas injector may be operably connected to a process gas line in a purge chamber to purge the connection between the gas injector and the process gas line.

公开(公告)号：US12237182B2

公开(公告)日：2025-02-25

申请号：US18589252

申请日：2024-02-27

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  H01L21/3065 ,  H01L21/67

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US12234554B2

公开(公告)日：2025-02-25

申请号：US17810094

申请日：2022-06-30

Applicant: ASM IP HOLDING B.V.

Inventor： Rutvij Naik ,  Junwei Su ,  Wentao Wang ,  Chuqin Zhou ,  Xing Lin

IPC: C23C16/458 ,  C23C16/455

Abstract: Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US20250051918A1

公开(公告)日：2025-02-13

申请号：US18927164

申请日：2024-10-25

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Caleb Miskin

IPC: C23C16/458 ,  C23C16/22 ,  C23C16/52

Abstract: A method of forming a structure is provided. The method includes supporting a substrate within a reaction chamber of a semiconductor processing system, flowing a silicon precursor and a germanium precursor into the reaction chamber, and forming a silicon-germanium layer overlaying the substrate with the silicon containing precursor and the germanium precursor. Concentration of the germanium precursor within the reaction chamber is increased during the forming of the silicon-germanium layer overlaying the substrate. Methods of forming film stack structures, semiconductor device structures, and semiconductor processing systems are also described.

公开(公告)号：US12224190B2

公开(公告)日：2025-02-11

申请号：US18539754

申请日：2023-12-14

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III

IPC: H01L21/67 ,  F16K3/24 ,  F16K27/12 ,  F16L55/132

Abstract: A valve assembly may provide a body comprising a bottom portion and a top portion having a threaded region, a closing mechanism situated above the top portion of the body, an actuator in communication with the closing mechanism, a nut configured to attach to the threaded region, and a threaded hole extending into at least one of the bottom portion of the body or the nut.

公开(公告)号：US12222644B2

公开(公告)日：2025-02-11

申请号：US17231299

申请日：2021-04-15

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Maes ,  Krzysztof Kamil Kachel ,  David Kurt de Roest

IPC: G03F7/004 ,  C23C16/455 ,  G03F7/00 ,  G03F7/16 ,  H01L21/027

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

公开(公告)号：US20250043427A1

公开(公告)日：2025-02-06

申请号：US18785394

申请日：2024-07-26

Applicant: ASM IP Holding B.V.

Inventor： Songwhe Herr ,  Dongok Shin ,  KiChul Um

IPC: C23C16/505 ,  C23C16/455

Abstract: A wafer processing apparatus with improved film uniformity is presented. The apparatus comprising a radio frequency (RF) enclosure enclosing and defining a reaction chamber; a showerhead placed inside of the reaction chamber configured to generating plasma for processing a wafer in the reaction chamber; a radio frequency (RF) power supply configured to generate RF and supply the generated RF to the showerhead; a plurality of capacitors connected in parallel and/or in serial between the RF power supply and the showerhead; and more than one auxiliary ground lines configured to be placed above the showerhead. The auxiliary ground lines are to be turned on sequentially for improving map profile.

公开(公告)号：US20250043416A1

公开(公告)日：2025-02-06

申请号：US18787053

申请日：2024-07-29

Applicant: ASM IP Holding B.V.

Inventor： Iordan Iordanov ,  Osama Khalil ,  Allen D'Ambra

IPC: C23C16/40 ,  C23C16/02 ,  C23C16/455 ,  C23C16/56

Abstract: Protected metallic components and reaction chambers including protected metallic components are disclosed. Exemplary methods for forming and utilizing protected metallic components are also disclosed. Protected metallic components include a conformal protective layer disposed over a non-planar surface of a metallic core.

公开(公告)号：USD1060598S1

公开(公告)日：2025-02-04

申请号：US29817804

申请日：2021-12-03

Applicant: ASM IP Holding B.V.

Designer： Shuyang Zhang ,  Ankit Kimtee