公开(公告)号：US10971392B2

公开(公告)日：2021-04-06

申请号：US16556157

申请日：2019-08-29

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L23/532 ,  G02F1/1343 ,  H01L49/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/786 ,  G02F1/1362

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US10937687B2

公开(公告)日：2021-03-02

申请号：US16556157

申请日：2019-08-29

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L23/532 ,  G02F1/1343 ,  H01L49/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/786 ,  G02F1/1362

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US10777448B2

公开(公告)日：2020-09-15

申请号：US16556159

申请日：2019-08-29

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L23/532 ,  G02F1/1343 ,  H01L49/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/786 ,  G02F1/1362

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US20180308744A1

公开(公告)日：2018-10-25

申请号：US15767994

申请日：2016-10-12

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L21/3205 ,  H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  G02F1/1343

CPC分类号： H01L21/768 ,  G02F1/134363 ,  G02F1/13439 ,  G02F2001/136295 ,  H01L21/3205 ,  H01L23/53209 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/24 ,  H01L29/4908 ,  H01L29/786

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US11610809B2

公开(公告)日：2023-03-21

申请号：US17160236

申请日：2021-01-27

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L23/532 ,  G02F1/1343 ,  H01L49/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/786 ,  G02F1/1362

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US20210151346A1

公开(公告)日：2021-05-20

申请号：US17160236

申请日：2021-01-27

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  G02F1/1343 ,  H01L49/02 ,  H01L27/12 ,  H01L29/49 ,  H01L21/3205 ,  H01L29/786

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US20190385894A1

公开(公告)日：2019-12-19

申请号：US16556157

申请日：2019-08-29

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  G02F1/1343 ,  H01L49/02 ,  H01L21/3205 ,  H01L27/12 ,  H01L29/786

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US20190385895A1

公开(公告)日：2019-12-19

申请号：US16556159

申请日：2019-08-29

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L21/768 ,  H01L29/786 ,  H01L27/12 ,  H01L21/3205 ,  H01L49/02 ,  G02F1/1343

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.

公开(公告)号：US10438841B2

公开(公告)日：2019-10-08

申请号：US15767994

申请日：2016-10-12

申请人： AMORPHYX, INC.

发明人： Sean William Muir

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/3205 ,  G02F1/1343 ,  H01L49/02 ,  H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  H01L23/532

摘要： Amorphous multi-component metallic films can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. Interfacial properties of AMMFs are superior to those of crystalline metal films, and therefore electric fields at the interface of an AMMF and an oxide film are more uniform. An AMMF resistor (AMNR) can be constructed as a three-layer structure including an amorphous metal, a tunneling insulator, and a crystalline metal layer. By modifying the order of the materials, the patterns of the electrodes, and the size and number of overlap areas, the I-V performance characteristics of the AMNR are adjusted. A non-coplanar AMNR has a five-layer structure that includes three metal layers separated by metal oxide tunneling insulator layers, wherein an amorphous metal thin film material is used to fabricate the middle electrodes.