Inter-area media service switching method, server, system, and storage medium

    公开(公告)号:US12132766B2

    公开(公告)日:2024-10-29

    申请号:US17623295

    申请日:2020-06-03

    申请人: ZTE CORPORATION

    发明人: Chuanyang Miao

    摘要: Provided are an inter-area media service switching method, a server, a system and a storage medium. A first MEC-CDN node acquires mobile information about a user device from a core network, where the user device establishes a connection with the first MEC-CDN node, and acquires a media service from the first MEC-CDN node; in response to determining, according to the mobile information, that the user device is pre-moved out of a coverage range of the first MEC-CDN node, the first MEC-CDN node determines a second MEC-CDN node and/or a second MEC platform to which the second MEC-CDN node is attached, and establishes a connection with the second MEC-CDN node; the first MEC-CDN node migrates state information about the user device onto the second MEC-CDN node; and in response to determining that the user device enters a coverage area of the second MEC-CDN node, the second MEC-CDN node establishes a connection with the user device, so that the user device acquires the media service from the second MEC-CDN node.

    Fingertip pulse oximeter
    2.
    外观设计

    公开(公告)号:USD1048410S1

    公开(公告)日:2024-10-22

    申请号:US29835280

    申请日:2022-04-18

    设计人: Changchun Xia

    摘要: FIG. 1 is a top, front, right side perspective view of a fingertip pulse oximeter, showing the claimed design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The dashed broken lines in the drawing depict portions of the fingertip pulse oximeter that form no part of the claimed design.

    Water filter
    4.
    外观设计

    公开(公告)号:USD1046098S1

    公开(公告)日:2024-10-08

    申请号:US29827421

    申请日:2022-02-19

    设计人: Huaping Wu

    摘要: FIG. 1 is a top, front, left side perspective view of a water filter, showing the claimed design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The dashed broken lines in the drawing depict portions of the water filter that form no part of the claimed design.

    Sensor package structure
    5.
    发明授权

    公开(公告)号:US12113082B2

    公开(公告)日:2024-10-08

    申请号:US17717223

    申请日:2022-04-11

    IPC分类号: H01L27/146 H01L23/00

    摘要: A sensor package structure is provided and includes a substrate, a sensor chip disposed on and electrically coupled to the substrate, a ring-shaped support disposed on the sensor chip, and a light-permeable layer disposed on the ring-shaped support. A top portion of the sensor chip defines a sensing region and a carrying region that surrounds the sensing region and that carries the ring-shaped support. The top portion of the sensor chip includes a passivation layer arranged in the sensing region and the carrying region, a color filter arranged in the sensing region and the carrying region, a pixel layer arranged in the sensing region and formed on the central segment, and a micro-lens layer that is formed on the pixel layer. A part of the color filter layer in the carrying region has a roughened surface and at least partially embedded in the ring-shaped support.

    Nitride-based semiconductor device and method for manufacturing the same

    公开(公告)号:US12094875B2

    公开(公告)日:2024-09-17

    申请号:US17616677

    申请日:2021-10-27

    摘要: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a gate structure, a first field plate, and a second field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate structure is disposed above the second nitride-based semiconductor layer. The first field plate is disposed over the gate structure and is electrically coupled with the source electrode and the drain electrode. The second field plate is disposed over the gate structure and is electrically coupled with the gate structure. The first field plate and the second field plate are parallel with each other. A top surface of the first field plate faces a bottom surface of the second field plate to overlap with each other.

    Method for producing a magnetic device

    公开(公告)号:US12094648B1

    公开(公告)日:2024-09-17

    申请号:US18383514

    申请日:2023-10-25

    CPC分类号: H01F41/04 H01F27/02 H01F27/28

    摘要: A magnetic device and a method for producing the same are provided. The magnetic device produced by the method includes a main body that is integrally formed. The method includes a preparing process, a coil assembling process, a placing process, and a forming process. The preparing process is implemented by producing a bottom seat and a lid. The coil assembling process is implemented by fixing a coiling to the bottom seat for formation of a first semi-finished product. The placing process is implemented by placing the first semi-finished product into a mold and placing the lid onto the first semi-finished product for formation of a second semi-finished product. The forming process is implemented by pressurizing the second semi-finished product, such that the bottom seat and the lid are melted and connected to each other to form the main body. The coil is correspondingly encompassed by the main body.

    Coupled magnetic element having high voltage resistance and high power density

    公开(公告)号:US12094634B2

    公开(公告)日:2024-09-17

    申请号:US17130115

    申请日:2020-12-22

    发明人: Martin Kuo Nanhai Zhu

    摘要: Provided is a coupled magnetic element having high voltage resistance and high power density, which includes: a first magnetic core, a first coil, a second coil, and at least one second magnetic core. There is a plurality of gaps between the first magnetic core and the at least one second magnetic core, the first coil is located between the first magnetic core and the second coil, and the second coil is located between the first coil and the at least one second magnetic core. The coupled magnetic element having high voltage resistance and high power density provided herein can achieve a coupled magnetic effect with high voltage resistance and high power density by means of the foregoing technical solution.