公开(公告)号：US12094875B2

公开(公告)日：2024-09-17

申请号：US17616677

申请日：2021-10-27

申请人： INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

发明人： Xin Zhang ,  Jianjian Sheng ,  Junyuan Lv ,  Zhenzhe Li

IPC分类号： H01L27/06 ,  H01L21/8252 ,  H01L23/522

CPC分类号： H01L27/0688 ,  H01L21/8252 ,  H01L23/5223 ,  H01L23/5226

摘要： A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a gate structure, a first field plate, and a second field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate structure is disposed above the second nitride-based semiconductor layer. The first field plate is disposed over the gate structure and is electrically coupled with the source electrode and the drain electrode. The second field plate is disposed over the gate structure and is electrically coupled with the gate structure. The first field plate and the second field plate are parallel with each other. A top surface of the first field plate faces a bottom surface of the second field plate to overlap with each other.