公开(公告)号：US07211822B2

公开(公告)日：2007-05-01

申请号：US11026062

申请日：2005-01-03

申请人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

发明人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC分类号： H01L31/0304

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

摘要翻译： 包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。 在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。 超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

公开(公告)号：US20070057276A1

公开(公告)日：2007-03-15

申请号：US11598744

申请日：2006-11-14

申请人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

发明人： Hiroyuki Kiyoku ,  Shuji Nakamura ,  Tokuya Kozaki ,  Naruhito Iwasa ,  Kazuyuki Chocho

IPC分类号： H01L33/00

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C23C16/042 ,  C23C16/303 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/16 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.

摘要翻译： 公开了一种生长具有非常少的晶体缺陷并可用作衬底的氮化物半导体晶体的方法。 本发明包括在包括具有主表面并由不同于氮化物半导体的材料制成的不同基底的支撑构件上形成第一选择性生长掩模的步骤，所述第一选择增长掩模具有多个第一窗口，用于选择性地暴露 支撑构件的上表面，以及通过使用气态3族元素源和气态氮源，从窗户露出的支撑构件的上表面生长氮化物半导体部分的步骤，直到氮化物半导体 在相邻窗口中生长的部分在选择性生长掩模的上表面上彼此结合。

公开(公告)号：US06849864B2

公开(公告)日：2005-02-01

申请号：US10601582

申请日：2003-06-24

申请人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

发明人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323 ,  H01L31/0328

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

公开(公告)号：US6093965A

公开(公告)日：2000-07-25

申请号：US209826

申请日：1998-12-11

申请人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L21/00 ,  H01L21/285 ,  H01L29/20 ,  H01L29/72 ,  H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/78

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/42 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L29/2003 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  H01L33/38 ,  H01L33/44 ,  H01S5/0425 ,  H01S5/32341 ,  Y02E10/50

摘要： A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

公开(公告)号：US5777350A

公开(公告)日：1998-07-07

申请号：US565101

申请日：1995-11-30

申请人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

发明人： Shuji Nakamura ,  Shinichi Nagahama ,  Naruhito Iwasa ,  Hiroyuki Kiyoku

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.

摘要翻译： 氮化物半导体发光器件具有由包含铟和镓的氮化物半导体构成的单量子阱结构或多量子阱的有源层。 提供由含有铝和镓的p型氮化物半导体制成的第一p型覆盖层与有源层的一个表面接触。 在第一p型覆盖层上设置由含有铝和镓的p型氮化物半导体构成的第二p型覆盖层。 第二p型覆盖层的带隙比第一p型覆盖层的带隙大。 提供与有源层的另一表面接触的n型半导体层。

公开(公告)号：US5734182A

公开(公告)日：1998-03-31

申请号：US661157

申请日：1996-06-10

申请人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure is disclosed. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0

摘要翻译： 公开了一种双异质结构的发光氮化镓基化合物半导体器件。 双异质结构包括由掺杂有p型和/或n型杂质的低电阻率In x Ga 1-x N（0

公开(公告)号：US5438198A

公开(公告)日：1995-08-01

申请号：US238020

申请日：1994-05-03

申请人： Masuyuki Ebitani ,  Toshifumi Tominaga ,  Akihito Kishi

发明人： Masuyuki Ebitani ,  Toshifumi Tominaga ,  Akihito Kishi

IPC分类号： G02F1/35 ,  C09K11/77 ,  H01L31/0232 ,  H01L31/14

CPC分类号： G01J1/58 ,  C09K11/7772 ,  H01L31/02322 ,  H05B33/22

摘要： An IR-to-visible converter for a solid-state image converting device including a photoconductive layer and an electroluminescent layer is sensitive to 1.5 .mu.m region IR rays and can convert such IR rays with high efficiency into visible light perceivable even in a well-lighted room. The IR-to-visible converter is characterized by using an IR to visible upconversion phosphors layer which has emission peaks in the sensitive wavelength region of the photoconductor layer, the IR to visible upconversion phosphors layer being optically combined with photoconductive layer.

摘要翻译： 用于包括光电导层和电致发光层的固态图像转换装置的IR可见转换器对于1.5μm区域红外线是敏感的，并且可以将这种IR光线以高效率转换成可见光， 照明房间。 IR到可见转换器的特征在于使用IR到可见的上转换磷光体层，其在感光体层的敏感波长区域中具有发射峰，IR到可见的上转换磷光体层与光电导层光学组合。

公开(公告)号：US20040004223A1

公开(公告)日：2004-01-08

申请号：US10601582

申请日：2003-06-24

申请人： Nichia Chemical Industries, Ltd.

发明人： Shinichi Nagahama ,  Masayuki Senoh ,  Shuji Nakamura

IPC分类号： H01L029/04 ,  H01L031/036

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/0002 ,  H01S5/3054 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173 ,  H01L2924/00

摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

公开(公告)号：US20030216011A1

公开(公告)日：2003-11-20

申请号：US10456475

申请日：2003-06-09

申请人： Nichia Chemical Industries Ltd.

发明人： Shuji Nakamura ,  Takashi Mukai ,  Naruhito Iwasa

IPC分类号： H01L021/20

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/325 ,  H01S5/32341

摘要： A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0

公开(公告)号：US20030094620A1

公开(公告)日：2003-05-22

申请号：US10292583

申请日：2002-11-13

申请人： Nichia Chemical Industries, Ltd.

发明人： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC分类号： H01L033/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

摘要： A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.