Abstract:
A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching pattern formed on a substrate on which an active layer having impurities added is grown, forming a front metal layer on a front upper surface of the substrate by using an evaporation method or a sputtering method after removing the etching pattern, forming a metal plated layer on the front surface of the substrate on which the front metal layer is formed, polishing a lower surface of the substrate by using at least one of a mechanical polishing method and a chemical polishing method until the front metal layer is exposed, forming a rear metal layer on the polished substrate, and removing each component by using at least one of a dry etching method and a wet etching method.
Abstract:
A method and apparatus for circular buffer-based rate matching and burst multiplexing for data transmission. According to the method and apparatus, rate matching patterns are efficiently determined according to data code rates in a wireless communication system using CBRM, and burst multiplexing is performed in units of bits without using an external channel interleaver when several RLC data blocks are transmitted via radio blocks. Accordingly, data bits are distributed into and carried by a plurality of bursts, thereby improving transmission performance.