公开(公告)号：US20200091359A1

公开(公告)日：2020-03-19

申请号：US16617996

申请日：2017-09-20

申请人： KAO CORPORATION

发明人： Hiroji HOSOKAWA ,  Takuya SAWADA ,  Akinori OKONOGI

IPC分类号： H01L31/0352 ,  H01L31/032

摘要： The present invention relates to a light absorption layer for forming a photoelectric conversion element and an intermediate-band solar cell excellent in quantum efficiency of two-step light absorption, a photoelectric conversion element having the light absorption layer, and an intermediate-band solar cell. The present invention also relates to a method for manufacturing a light absorption layer having an intermediate-band, using a “wet process”, which method can be expected to greatly reduce costs and expand to use for flexible substrates. The light absorption layer of the present invention has an intermediate-band, wherein quantum dots are dispersed in a matrix of a bulk semiconductor having a band gap energy of 2.0 eV or more and 3.0 eV or less.

公开(公告)号：US20200075787A1

公开(公告)日：2020-03-05

申请号：US16676498

申请日：2019-11-07

申请人： AGC Inc ,  AGC GLASS EUROPE

发明人： Tomohiro SAKAI ,  Tetsuji IRIE ,  Yu ONOZAKI ,  Aichi INOUE ,  Manabu NISHIZAWA ,  Hiroyuki YAMAMOTO

IPC分类号： H01L31/048 ,  H01L31/054 ,  H01L31/032

摘要： To provide a cover glass for a solar cell module which can sufficiently maintain the power generation efficiency of a solar cell module, even when a design is imparted to the entire surface of the cover glass so as to make solar cells be invisible from the outside, and a solar cell module.To provide a cover glass 14 to be bonded on light-receiving surfaces 16A and 16B of solar cells 16 via an encapsulant material 18, which has a visible transmittance of from 0% to 60% and an average infrared transmittance of from 20% to 100%, which is a value calculated by simply averaging transmittances at 5 nm intervals in an infrared region at a wavelength of from 780 nm to 1,500 nm.

公开(公告)号：US10566478B2

公开(公告)日：2020-02-18

申请号：US15705342

申请日：2017-09-15

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Jeung-Hyun Jeong ,  Jong-Keuk Park ,  Won Mok Kim ,  Seung Hee Han ,  Doh Kwon Lee

IPC分类号： H01L31/18 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0392 ,  H01L31/0468

摘要： Provided are a thin-film solar cell module structure and a method of manufacturing the same.

公开(公告)号：US20200052142A1

公开(公告)日：2020-02-13

申请号：US16604682

申请日：2018-09-20

申请人： IBARAKI UNIVERSITY ,  JX NIPPON MINING & METALS CORPORATION

发明人： Haruhiko UDONO ,  Toshiaki ASAHI

IPC分类号： H01L31/103 ,  H01L31/0224 ,  H01L31/032

摘要： Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

公开(公告)号：US20200044102A1

公开(公告)日：2020-02-06

申请号：US16606008

申请日：2018-04-20

申请人： OXFORD UNIVERSITY INNOVATION LIMITED

发明人： Nobuya Sakai ,  Amir Abbas Haghighirad ,  Henry James Snaith

IPC分类号： H01L31/032 ,  H01L51/42 ,  H01L51/50 ,  H01L33/26 ,  C01G55/00

摘要： The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.

公开(公告)号：US20200028365A1

公开(公告)日：2020-01-23

申请号：US16262990

申请日：2019-01-31

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hisashi YOSHIDA ,  Shigeya KIMURA

IPC分类号： H02J3/38 ,  H02S20/32 ,  H01L31/02 ,  H01L31/0304 ,  H01L31/032

摘要： According to one embodiment, a power generation element includes a first conductive layer, a second conductive layer, a first member provided between the first conductive layer and the second conductive layer, and a second member separated from the first member and provided between the first member and the second conductive layer. The first member includes a first region including Alx1Ga1-x1N (0≤x1 direction of the first member has a component in an orientation from the first conductive layer toward the second conductive layer.

公开(公告)号：US10529877B2

公开(公告)日：2020-01-07

申请号：US15825388

申请日：2017-11-29

申请人： Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

发明人： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park ,  Yongseon Shin ,  Woojong Yu

IPC分类号： H01L29/06 ,  H01L31/032 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41

摘要： Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

公开(公告)号：US20200006589A1

公开(公告)日：2020-01-02

申请号：US16567684

申请日：2019-09-11

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

发明人： Kazushige YAMAMOTO ,  Soichiro SHIBASAKI ,  Mutsuki YAMAZAKI ,  Yuya HONISHI

IPC分类号： H01L31/0725 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/075 ,  H01L31/032

摘要： A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.

公开(公告)号：US20200006581A1

公开(公告)日：2020-01-02

申请号：US16442776

申请日：2019-06-17

申请人： APPLIED MATERIALS, INC.

发明人： PHILIP HSIN-HUA LI ,  SESHADRI RAMASWAMI

IPC分类号： H01L31/032 ,  H01L27/146 ,  H01L31/18

摘要： Methods and apparatus form a photon absorber layer of a photodiode with characteristics conducive to applications such as, but not limited to, image sensors and the like. The absorber layer uses a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% to control the absorbed wavelengths while reducing dark current. Deposition temperatures of the absorber layer are controlled to less than approximately 400 degrees Celsius to produce sub-micron grain sizes. The absorber layer is doped with antimony at a temperature of less than approximately 400 degrees Celsius to increase the absorption.

公开(公告)号：US20190341520A1

公开(公告)日：2019-11-07

申请号：US16514046

申请日：2019-07-17

申请人： BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD.

发明人： Dmitry Poplavskyy

IPC分类号： H01L31/18 ,  H01L31/0749 ,  H01L31/032 ,  H01L21/67 ,  H01L31/0445 ,  H01L31/05 ,  H01L21/677

摘要： A method of making a semiconductor device includes forming a semiconductor material stack having a sodium at an atomic concentration greater than 1×1019/cm3, depositing a transparent conductive oxide layer over the semiconductor material stack, such that sodium atoms diffuse from the semiconductor material stack into the transparent conductive oxide layer, and contacting a physically exposed surface of the transparent conductive oxide layer with a fluid to remove sodium from the transparent conductive oxide layer.