公开(公告)号：US20220013675A1

公开(公告)日：2022-01-13

申请号：US17293403

申请日：2019-05-23

申请人： Ibaraki University ,  JX Nippon Mining & Metals Corporation

发明人： Haruhiko UDONO ,  Toshiaki ASAHI

IPC分类号： H01L31/032 ,  H01L31/18 ,  C30B29/52

摘要： Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn.Zna  Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

公开(公告)号：US20200052142A1

公开(公告)日：2020-02-13

申请号：US16604682

申请日：2018-09-20

申请人： IBARAKI UNIVERSITY ,  JX NIPPON MINING & METALS CORPORATION

发明人： Haruhiko UDONO ,  Toshiaki ASAHI

IPC分类号： H01L31/103 ,  H01L31/0224 ,  H01L31/032

摘要： Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.