- 专利标题: Semiconductor devices including two-dimensional materials and methods of manufacturing the semiconductor devices
-
申请号: US15825388申请日: 2017-11-29
-
公开(公告)号: US10529877B2公开(公告)日: 2020-01-07
- 发明人: Jinseong Heo , Kiyoung Lee , Seongjun Park , Yongseon Shin , Woojong Yu
- 申请人: Samsung Electronics Co., Ltd. , Research & Business Foundation Sungkyunkwan University
- 申请人地址: KR Gyeonggi-do KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- 当前专利权人: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- 当前专利权人地址: KR Gyeonggi-do KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2016-0162293 20161130
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L31/032 ; H01L29/66 ; H01L29/423 ; H01L29/78 ; H01L29/786 ; H01L29/04 ; H01L29/24 ; H01L29/41
摘要:
Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.
公开/授权文献
信息查询
IPC分类: