Abstract:
A pixel structure of an image sensor, the pixel structure for providing sensor signals in response to incident light is provided. The pixel structure includes light selective elements, the light selective elements having predetermined thicknesses to absorb only light having wavelengths corresponding to the visible region of the light spectrum.
Abstract:
A solid state image pickup device has a photo diodes for producing charge packets from image-carrying light, a vertical overflow drain formed under the photo diodes, charge transfer channel regions selectively connected to the photo diodes through transfer gate transistors, resistive gate electrodes capacitively coupled to said charge transfer channel regions, respectively, and a pulse signal source connected to far ends of the resistive gate electrodes and near ends of the resistive gate electrodes closer to a horizontal charge transfer unit, and the pulse signal source produces a potential gradient in the charge transfer channel regions after transfer of the charge packets to the charge transfer channel regions so that the charge packets are conveyed through the horizontal charge transfer unit without a large horizontal charge transfer signal.
Abstract:
An image processing method for an electronic camera which includes a photoelectric element having plural sensors and color filters in plural different colors, wherein each of the plural sensors corresponds to a respective one of the color filters in the different colors. The method includes the steps of: obtaining a signal value from a target sensor of the sensors when one of the sensors is assigned to the target sensor; obtaining the first average value from signal values of the sensors having the color filters of which a color is the same as that of the color filter of the target sensor; obtaining the second average value from signal values of the sensors having the color filters of which a color is different from that of the color filter of the target sensor; and obtaining an interpolation value for a color, which is different from that of the color filter of the target sensor, of the target sensor according to the signal value from the target sensor, the first average value and the second average value.
Abstract:
A drive circuit that produces an over-voltage signal and protects circuit components from the over-voltage signal (i.e., such that circuit components operate within process specification limits). A photosensitive pixel cell can be driven by the drive circuit. Use of the drive circuit increases dynamic range of the pixel cell and reduces “ghost images.” Control logic selectively passes an over-voltage signal to individual rows of a 2-D pixel array.
Abstract:
A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over portions of the semiconductor substrate comprising a circuit node including the second terminal of the semiconductor transfer switch, the second terminal of the capacitive storage element and the input of the semiconductor amplifier and to prevent substantially all photons from entering the circuit node. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the circuit node. A plurality of storage pixel sensors are disposed in an array.
Abstract:
An amplifier type solid-state imaging device is operated in a capacitor load operation system. This solid-state imaging device is made high in reliability and an arrangement of the horizontal output circuit portion is simplified. The solid-state imaging device includes a plurality of pixel MOS transistors each of which is connected between a voltage source (VDD) and a vertical signal line, a control electrode thereof being connected to a scanning line and charges generated by photoelectric conversion being accumulated near the channel thereof, a load capacitor element connected between the vertical signal line and a first potential, and a reset MOS switch for resetting the load capacitor element to a reset potential. A potential of the vertical signal line is also reset. When a signal is read out, the potential of the load capacitor element is set to substantially the same potential as the channel potential of the pixel MOS transistor. The capacitance of the load capacitor element is set to be larger than the capacitance of the vertical signal line. The reset potential is set to be shallower than the channel potential obtained in the pixel MOS transistor when no light is incident on the pixel MOS transistor, and a potential difference between it and a channel potential obtained when no light is incident on the pixel MOS transistor is set so as to fall within 2.0V.
Abstract:
An image scanner capable of reducing the read time by narrowing the visual field for a small-size electronic component. This image scanner includes a photosensitive element array having a plurality of photosensitive elements arranged in a row which are exposed to light to accumulate charges therein, a shift register for receiving the charges stored in the photosensitive elements and supplying the charges to an output portion, a shift gate for controlling the charges stored in the photosensitive elements to be transferred to the shift register, and a transfer command signal output portion for generating a transfer command signal by which the charges stored in the photosensitive elements are allowed to be transferred to the shift register. In addition, the transfer command signal output portion is able to change the intervals of time at which the transfer command signal is generated.
Abstract:
Color separating characteristics which are preferable in case of obtaining the primary color components are obtained from an image pickup signal by using a color separation matrix. A luminance signal is obtained by a luminance signal formation processing section from the signal supplied from an image pickup device through an A/D converter and chrominance signals are obtained by a chrominance signal separation processing section. In the chrominance signal separation processing section, the signals obtained from the image pickup signal are multiplied with a color separation matrix, thereby obtaining primary color components RGB. The color separation matrix is constructed by coefficients for white balance adjustment and coefficients for adjustment in consideration of the primary color components of the image pickup signal.
Abstract:
An image sensor has a plurality of sensor integrated circuit devices of the same configuration arranged in a row. Each sensor integrated circuit device has a plurality of light-sensing elements, a sensor circuit for successively outputting the outputs of these light-sensing elements, and an amplifier circuit. It further has a first output terminal for directing the output of the sensor circuit out of the sensor integrated circuit device, an input terminal for directing an external signal to the amplifier circuit, and a second output terminal for directing the output of the amplifier circuit out of the sensor integrated circuit device. The first output terminal of each sensor integrated circuit device is connected to the input terminal of a particular sensor integrated circuit device so that the output of every light-sensing element is amplified by the amplifier circuit of that particular sensor integrated circuit device alone.
Abstract:
A solid-state imaging apparatus includes a solid-state imaging device and a signal processing circuit. The solid-state imaging device includes: a plurality of photoelectric converting sections provided with color filters having different spectroscopic characteristics, and each converting light incident thereon into a charge and accumulating the charge, and a plurality of vertical charge transfer sections for vertically transferring the charge read from each of the photoelectric converting sections. A plurality of reading operations to read the charges accumulated in the photoelectric converting sections to the plurality of the vertical charge transfer sections are performed within a time duration for scanning an image for one image plane, and the charges read from the photoelectric converting sections are transferred through the vertical charge transfer section separately for each of the reading operations. The signal processing circuit includes: a plurality of color separation circuits each for performing color separation of signals based on the charges read by the plurality of reading operations and transferred separately; and a synthesis circuit for synthesizing the signals sent by the color separation circuits and outputting the resultant signal.