公开(公告)号：US20030169793A1

公开(公告)日：2003-09-11

申请号：US10377704

申请日：2003-03-04

申请人： SHARP KABUSHIKI KAISHA

发明人： Hiroyuki Hosoba ,  Atsuo Tsunoda ,  Hiroshi Hayashi

IPC分类号： H01L021/00 ,  H01S005/00

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2205 ,  H01S5/2219

摘要： In this semiconductor laser device, an InGaP etching block layer 11 as an etching selection layer having etching selectivity for an n-type AlInP current block layer 10, which is a non-optical-absorption layer, is formed on the n-type current block layer 10. Since this etching block layer 11 prevents the current block layer 10 on both sides of a ridge 20 from being etched during manufacture, a contact layer 12 can be prevented from entering gaps between the sides of this ridge 20 and the current block layer 10. Therefore, light oscillating in an active layer 4 is taken out from a device end surface without being absorbed in the contact layer 12. According to this semiconductor laser device, an oscillation threshold current and an operation current can be maintained low, deterioration of differential quantum efficiency can be prevented and reliability can be improved.

摘要翻译： 在该半导体激光器件中，在n型电流块上形成作为非光学吸收层的n型AlInP电流阻挡层10具有蚀刻选择性的蚀刻选择层的InGaP蚀刻阻挡层11 由于该蚀刻阻挡层11防止在制造期间在脊20的两侧上的电流阻挡层10被蚀刻，因此可以防止接触层12进入该脊20的两侧之间的间隙和当前阻挡层 因此，在有源层4中振荡的光从器件端面取出而不被吸收在接触层12中。根据该半导体激光器件，可以将振荡阈值电流和操作电流保持为低，劣化 可以防止差分量子效率，并提高可靠性。

公开(公告)号：US20030132454A1

公开(公告)日：2003-07-17

申请号：US10204500

申请日：2002-11-13

发明人： Alfred Lell ,  Volker Harle ,  Berthold Hahn ,  Johann Luft

IPC分类号： H01L031/0328

CPC分类号： H01S5/2232 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/32341

摘要： According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.

摘要翻译： 根据本发明，制造了用于发射电磁辐射，特别是光的半导体部件，其具有以下特征：用于产生辐射的有源层，电连接到有源层的p型接触， 电连接到有源层的电流限制结构，以及限定电流路径的电流限制结构，其中电流限制结构设置在n型触点和有源层之间。

公开(公告)号：US06522676B1

公开(公告)日：2003-02-18

申请号：US09492008

申请日：2000-01-27

申请人： Takenori Goto ,  Nobuhiko Hayashi

发明人： Takenori Goto ,  Nobuhiko Hayashi

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0211 ,  H01S5/0213 ,  H01S5/0658 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34333

摘要： A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate 1 an n-type cladding layer 3, active layer 4 and p-type cladding layer including an upwardly projecting stripe portion 53, an n-type current blocking layer 6 being formed at each of opposite sides of the stripe portion 53. The stripe portion 53 of the p-type cladding layer 5 comprises an upper stripe portion 51 and a lower stripe portion 52. The upper stripe portion 51 has a minimum width W1 at the position of the boundary between the upper and lower stripe portions 51, 52, and the lower stripe portion 52 has at the position of its lower end a width W2 greater than the minimum width W1 of the upper stripe portion 51. This construction realizes a higher yield than in the prior art.

摘要翻译： 自脉动型氮化物半导体器件包括在基板1上叠加n型包覆层3，有源层4和包括向上突出的条形部分53，n型电流阻挡层6的p型覆层 形成在条形部分53的相对两侧.p型包覆层5的条形部分53包括上条纹部分51和下条纹部分52.上条纹部分51具有最小宽度W1 上条带部分51和下条带部分52和下条部分52之间的边界的位置在其下端的宽度W2大于上条部分51的最小宽度W1的位置。这种结构实现了更高的 产率高于现有技术。

公开(公告)号：US06521476B2

公开(公告)日：2003-02-18

申请号：US09978053

申请日：2001-10-17

申请人： Munechika Kubota

发明人： Munechika Kubota

IPC分类号： H01L2100

CPC分类号： H01S5/2231 ,  H01S5/2081 ,  H01S5/2205 ,  H01S5/2213

摘要： A method for manufacturing a semiconductor optical functional device, comprising: forming a laminated semiconductor layer over a substrate; forming an island-form preliminary pattern whose side wall surface is substantially perpendicular to the upper surface of the substrate by patterning all or part of the laminated semiconductor layer; forming an insulating material component on the top side of the substrate so that the upper surface of the preliminary pattern and part of the side walls of the preliminary pattern are exposed; and etching the side walls of the preliminary pattern and thereby changing the preliminary pattern into a reversed-mesa structure component that contributes to optical function and forming a space between the reversed-mesa structure component and the insulating material component.

摘要翻译： 一种半导体光功能元件的制造方法，其特征在于，在基板上形成层叠半导体层， 通过图案化全部或部分层叠半导体层，形成其侧壁表面基本上垂直于衬底的上表面的岛状初步图案; 在基板的上侧形成绝缘材料部件，使得预备图案的上表面和初步图案的侧壁的一部分露出; 并且蚀刻初步图案的侧壁，从而将初步图案改变成有助于光学功能并在反台面结构部件和绝缘材料部件之间形成空间的反台面结构部件。

公开(公告)号：US20030020079A1

公开(公告)日：2003-01-30

申请号：US10200771

申请日：2002-07-24

申请人： Sanyo Electric Co., Ltd.

发明人： Masayuki Hata ,  Yasuhiko Nomura ,  Daijiro Inoue

IPC分类号： H01L027/15

CPC分类号： H01L33/145 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/204 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2219 ,  H01S5/2224 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/3063 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

摘要翻译： 获得能够稳定横向光束缚的氮化物系半导体发光元件。 该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面 的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中 路径部分。 因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。 因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

公开(公告)号：US20020176475A1

公开(公告)日：2002-11-28

申请号：US10152854

申请日：2002-05-23

发明人： Hironobu Sai ,  Jun Ichihara

IPC分类号： H01S003/08

CPC分类号： H01S5/1835 ,  H01L33/105 ,  H01L33/46 ,  H01L33/642 ,  H01S5/02461 ,  H01S5/18338 ,  H01S5/2027 ,  H01S5/2205 ,  H01S5/2231 ,  H01S2301/173 ,  H01S2301/176

摘要： On a semiconductor substrate (1), a double hetero structure portion (6) in which an active layer (4) having smaller band gap is sandwiched between semiconductor layers (3, 5) having larger band gap than that of the active layer (4) is formed. A light reflection film (9) is formed at least a part of side walls of the double hetero structure portion (6). As a result, a semiconductor light emitting device that light which leaks from side wall of light emitting area in a chip is reduced and emission light can be outputted efficiently can be obtained.

摘要翻译： 在半导体衬底（1）上，具有较小带隙的有源层（4）夹在具有比有源层（4）的带隙大的带隙的半导体层（3,5）之间的双异质结构部分（6） ） 形成了。 光反射膜（9）形成在双异质结构部分（6）的至少一部分侧壁上。 结果，可以获得半导体发光器件，其能够减少从芯片中的发光区域的侧壁泄漏的光，并且可以有效地输出发光。

公开(公告)号：US20020158314A1

公开(公告)日：2002-10-31

申请号：US09958761

申请日：2001-10-11

发明人： Jerome Chandra Bhat ,  Graham Michael Berry ,  Sean David Amos

IPC分类号： H01L021/00 ,  H01L029/06

CPC分类号： H01S5/227 ,  H01S5/2205 ,  H01S5/2222 ,  H01S5/2227

摘要： The present invention relates to a buried mesa semiconductor device such as a laser diode with reduced leakage currents past the heterojunction, and to a method of forming such a device. The method comprises the steps of: growing a semiconductor wafer (1) with a plurality of layers including a substrate (2) and an active layer (6); depositing a mask (52) on the wafer (1) which defines one or more mesa regions (51); etching the wafer (1) to remove semiconductor layers to form a mesa structure (51) above the substrate (2), each mesa region (51) having mesa sides (53,54) extending upwards from the substrate (2) and between the mesa sides (53,54) a mesa top (63,64,65); growing one or more current confining semiconductor layers (56A,59A) to cover the mesa sides (53,54); removing part of the mask (52) along a part (64,65) of the top of the mesa adjacent the mesa sides (53,54); growing a leakage current confining semiconductor layer (68A) on a previous current confining layer (59A) so that the leakage current confining semiconductor layer (68A) extends to overlie partly (64,65) the mesa top adjacent said mesa sides (53,54); and removing the residual mask (62) and growing above the mesa top (63,64,65) one or more electrical contact semiconductor layers (75) by which a confined electrical current may be applied through the mesa (51) and substrate (2).

摘要翻译： 本发明涉及一种埋入台状半导体器件，例如具有经过异质结的漏电流较小的激光二极管，以及形成这种器件的方法。 该方法包括以下步骤：生长具有包括衬底（2）和活性层（6）的多个层的半导体晶片（1）; 在限定一个或多个台面区域（51）的晶片（1）上沉积掩模（52）; 蚀刻晶片（1）以去除半导体层以在基板（2）上方形成台面结构（51），每个台面区域（51）具有从基板（2）向上延伸的台面侧（53,54） 台面（53,54）台面（63,64,65）; 生长一个或多个电流限制半导体层（56A，59A）以覆盖台面侧面（53,54）; 沿着台面顶部邻近台面（53,54）的部分（64,65）去除面罩（52）的一部分; 在先前的电流限制层（59A）上生长泄漏电流限制半导体层（68A），使得限流半导体层（68A）的漏电流延伸到邻近所述台面侧（53,54）的台面顶部（64,65） ）; 以及去除所述残留掩模（62）并且在所述台面顶部（63,64,65）上方生长一个或多个电接触半导体层（75），通过所述电接触半导体层可以通过所述台面（51）和衬底（2）施加受限制的电流 ）。

公开(公告)号：US06345064B1

公开(公告)日：2002-02-05

申请号：US09188204

申请日：1998-11-09

申请人： Hiroaki Fujii

发明人： Hiroaki Fujii

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/2205 ,  H01S5/2219

摘要： A semiconductor device provides a current blocking layer for a current confinement, the current blocking layer comprising a compound semiconductor crystalline, wherein the compound semiconductor crystalline has such a deviation from a stoichiometry in compositional ratio as introducing excess point defects into the compound semiconductor crystalline.

摘要翻译： 半导体器件提供用于电流限制的电流阻挡层，电流阻挡层包含化合物半导体晶体，其中化合物半导体晶体与化合物半导体晶体中引入过量点缺陷的组成比具有这样的偏离化学计量比。

公开(公告)号：US20010049152A1

公开(公告)日：2001-12-06

申请号：US09925574

申请日：2001-08-09

发明人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01L021/00

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/4031 ,  H01L2924/00

摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

摘要翻译： 本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。 在同一基板上形成有层叠了半导体层和p侧电极的多个激光振荡器。 通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。 并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。 每个接触电极与对应于每个开口的对准方向平行延伸。 因此，各开口之间的空间和在对准方向上并排放置的每个接触电极之间的空间被加宽，并且消除了对于高精度位置匹配的要求。 因此，可以容易且准确地连接各p侧电极和各接触电极。

公开(公告)号：US06310381B1

公开(公告)日：2001-10-30

申请号：US09306183

申请日：1999-05-06

申请人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

发明人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01L310224

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/4031 ,  H01L2924/00

摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

摘要翻译： 本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器 。 通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。 并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。 每个接触电极与对应于每个开口的对准方向平行延伸。 因此，各开口之间的空间和在对准方向上并排放置的每个接触电极之间的空间被加宽，并且消除了对高精度位置匹配的要求。 因此，可以容易且准确地连接各p侧电极和各接触电极。