公开(公告)号：US06310381B1

公开(公告)日：2001-10-30

申请号：US09306183

申请日：1999-05-06

申请人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

发明人： Takehiro Taniguchi ,  Hironobu Narui ,  Noriko Ueno ,  Nobukata Okano

IPC分类号： H01L310224

CPC分类号： H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2205 ,  H01S5/227 ,  H01S5/4031 ,  H01L2924/00

摘要： The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated. Therefore, each p-side electrode and each contact electrode can be connected easily and accurately.

摘要翻译： 本发明的目的是提供一种能够容易且准确地确保接触电极的连接的光电转换元件。在相同的基板上形成多个半导体层和p侧电极层叠的激光振荡器 。 通过绝缘层的每个开口形成在基底基板上的每个接触电极与每个p侧电极电连接。 并排配置的每个激光振荡器对应的开口以对准方向形成为交错构造。 每个接触电极与对应于每个开口的对准方向平行延伸。 因此，各开口之间的空间和在对准方向上并排放置的每个接触电极之间的空间被加宽，并且消除了对高精度位置匹配的要求。 因此，可以容易且准确地连接各p侧电极和各接触电极。

公开(公告)号：US06175141B1

公开(公告)日：2001-01-16

申请号：US09091536

申请日：1998-06-18

申请人： Hermann Hofbauer ,  Bernd Kriegel ,  Peter Speckbauer ,  Martin Ullrich ,  Ruport Dietl

发明人： Hermann Hofbauer ,  Bernd Kriegel ,  Peter Speckbauer ,  Martin Ullrich ,  Ruport Dietl

IPC分类号： H01L310224

CPC分类号： H01L31/068 ,  H01L31/02245 ,  Y02E10/547

摘要： The invention relates to an opto-electronic sensor component comprising the following: a first semiconducting layer of predetermined conductivity type and a second layer of different semiconductor or metal conductivity type; a transition region between the two layers; at least one surface region through which the electromagnetic radiation to be detected can pass into the transition region (radiation-side surface region); and an electrode for each layer to connect both layers to an electrical circuit. The electrodes of the two layers are mounted on a surface of the component opposite a radiation-side surface region. This simplifies connection of the sensor component to an electrical circuit mounted on a circuit board or the like.

摘要翻译： 本发明涉及一种光电传感器部件，包括以下部件：具有预定导电类型的第一半导体层和不同半导体或金属导电类型的第二层; 两层之间的过渡区域; 至少一个表面区域，待检测的电磁辐射通过该表面区域可以进入过渡区域（辐射侧表面区域）; 以及用于每层的电极以将两个层连接到电路。 两层电极安装在与辐射侧表面区域相对的部件的表面上。 这简化了传感器部件与安装在电路板等上的电路的连接。

公开(公告)号：US06713832B2

公开(公告)日：2004-03-30

申请号：US10169726

申请日：2002-07-15

申请人： Fabrice Pardo ,  Stéphane Collin ,  Roland Teissier ,  Jean-Luc Pelouard

发明人： Fabrice Pardo ,  Stéphane Collin ,  Roland Teissier ,  Jean-Luc Pelouard

IPC分类号： H01L310224

CPC分类号： H01L31/101 ,  H01L31/1085

摘要： Device for photodetection with a vertical metal semiconductor microresonator and procedure for the manufacture of this device. According to the invention, in order to detect an incident light, at least one element is formed over an insulating layer (2) that does not absorb this light, including a semiconductor material (6) and at least two electrodes (4) holding the element, with the element and electrode unit being suitable for absorbing this light and designed to incease the light intensity with respect to the incident light, in particular by making a surface plasmon mode resonate between the unit interfaces with the layer and the propagation medium for the incident light, with the resonance of this mode taking place in teh interface between the element and atleast one of the electrodes, with this mode being excited by the component of the magnetic field of the light, parallel to the electrodes. Application for optical telecommunications.

摘要翻译： 用于用垂直金属半导体微谐振器进行光电检测的装置和用于制造该装置的方法。根据本发明，为了检测入射光，在不吸收该光的绝缘层（2）上形成至少一个元件 ，包括半导体材料（6）和保持元件的至少两个电极（4），元件和电极单元适合于吸收该光，并被设计成相对于入射光增加光强度，特别是通过制造 表面等离子体模式在与层的单位界面和入射光的传播介质之间共振，该模式的谐振发生在元件和至少一个电极之间的界面中，这种模式被元件 的光的磁场，平行于电极。 光通信应用。

公开(公告)号：US06350989B1

公开(公告)日：2002-02-26

申请号：US09298685

申请日：1999-04-23

申请人： Edwin Y. Lee ,  Ralph B. James

发明人： Edwin Y. Lee ,  Ralph B. James

IPC分类号： H01L310224

CPC分类号： H01L27/1446

摘要： Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

摘要翻译： 用于伽马射线和X射线光谱仪和成像系统的晶圆熔融半导体辐射探测器。 使用晶片融合制造检测器，以在两个固体半导体片之间插入通常包括金属的导电栅格，一个具有阴极（负极），另一个具有阳极（正电极）。 晶片熔融半导体辐射探测器的功能类似于通常使用的Frisch格栅辐射检测器，其中导电栅格在阴极和阳极之间的高真空中插入。 晶片熔融半导体辐射检测器可以使用不同尺寸和相同或不同厚度的相同或两种不同的半导体材料制造; 并且其可以利用各种各样的金属或其它导电材料来形成电网，以优化检测器性能，而不受各个部件的结构不相似的约束。 晶片熔断检测器基本上由例如通过在两片半导体材料之一的一端蚀刻间隔开的槽形成，用形成栅电极的所选择的电导体部分地填充槽，然后将槽 一个半导体片到另一半导体片的一端，阴极和阳极形成在半导体片的相对端上。

公开(公告)号：US06342721B1

公开(公告)日：2002-01-29

申请号：US09329771

申请日：1999-06-10

申请人： David Douglas Nolte ,  John Anthony Coy ,  Marvin B. Klein ,  G. David Bacher ,  Meng P. Chiao ,  Gilmore Joseph Dunning ,  Kenneth Bacher ,  David M. Pepper

发明人： David Douglas Nolte ,  John Anthony Coy ,  Marvin B. Klein ,  G. David Bacher ,  Meng P. Chiao ,  Gilmore Joseph Dunning ,  Kenneth Bacher ,  David M. Pepper

IPC分类号： H01L310224

CPC分类号： H01L31/022408 ,  H01L27/14683

摘要： A photo-EMF detector for the collection of photons includes a substrate formed of a photorefractive semiconductor and a plurality of interlaced electrode pairs disposed over the substrate. Each electrode pair includes two parallel electrodes defining an active area therebetween for the collection of photons. One electrode of each pair is disposed between an adjacent pair of electrodes and proximate one electrode of the adjacent pair, light from striking a substrate surface between proximate electrodes and outputs from each of the plurality of interlaced electrode pairs are collected.

摘要翻译： 用于收集光子的光电检测器包括由光折射半导体和设置在衬底上的多个隔行电极对形成的衬底。 每个电极对包括两个平行的电极，其间限定了用于收集光子的有效区域。 每对的一个电极设置在相邻的一对电极之间并且邻近相邻对的一个电极之间，来自撞击邻近电极之间的衬底表面的光和从多个隔行电极对中的每一个的输出被收集。

公开(公告)号：US06815790B2

公开(公告)日：2004-11-09

申请号：US10340565

申请日：2003-01-10

申请人： Peter S. Bui ,  Narayan Dass Taneja

发明人： Peter S. Bui ,  Narayan Dass Taneja

IPC分类号： H01L310224

CPC分类号： H01L31/02024

摘要： The present invention improves the resolution and accuracy of the presently known two-dimensional position sensing detectors and delivers improved performance in the 1.3 to 1.55 micron wavelength region. The present invention is an array of semiconductor layers with four electrodes, the illustrative embodiment comprising a semi-insulating substrate semiconductor base covered by a semiconductor buffered layer, the buffered layer further covered by a semiconductor absorption layer and the absorption layer covered with a semiconductor layer. Four electrodes are placed on this semiconductor array: two on the top layer parallel to each other and near the ends of opposite edges, and two etched in the buffered layer, parallel to each other and perpendicular to the first set. The layers are doped as to make a p-n junction in the active area. Substantially all the layers, excepting the semi-insulating substrate layer, are uniformly resistive.

摘要翻译： 本发明提高了目前已知的二维位置感测检测器的分辨率和精度，并且在1.3至1.55微米波长区域中提供了改善的性能。 本发明是具有四个电极的半导体层的阵列，该说明性实施例包括被半导体缓冲层覆盖的半绝缘衬底半导体基底，该缓冲层还被半导体吸收层覆盖，并且覆盖有半导体层的吸收层 。 四个电极放置在该半导体阵列上：两个在顶层上彼此平行并且靠近相对边缘的端部，两个在缓冲层中被蚀刻，彼此平行并垂直于第一组。 这些层被掺杂以在有源区域中形成p-n结。 除了半绝缘基底层之外，基本上所有的层均匀地具有电阻性。

公开(公告)号：US06660931B2

公开(公告)日：2003-12-09

申请号：US10208868

申请日：2002-08-01

申请人： Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

发明人： Noboru Toyama ,  Yuichi Sonoda ,  Yusuke Miyamoto

IPC分类号： H01L310224

CPC分类号： H01L31/022425 ,  C23C14/086 ,  Y02E10/50

摘要： A substrate for a solar cell is provided which comprises a support having a metal surface and a zinc oxide film formed on the metal surface and having a water content of 7.5×10−3 mol/cm3 or less, preferably 4.0×10−4 mol/cm3 or more. Thereby, the increase of series resistance and the generation of shunt are prevented and the efficiency such as Jsc and the chemical stability are improved, thus obtaining a solar cell with a zinc oxide film having optimal overall characteristics.

摘要翻译： 提供了一种用于太阳能电池的基板，其包括具有金属表面的支撑体和形成在金属表面上的水分含量为7.5×10 -3 mol / cm 3以下，优选4.0×10 3的氧化锌膜 -4 -4 mol / cm 3以上。 由此，防止了串联电阻的增加和分路的产生，提高了Jsc等的效率和化学稳定性，从而得到具有最佳整体特性的具有氧化锌膜的太阳能电池。

公开(公告)号：US06573445B1

公开(公告)日：2003-06-03

申请号：US09856557

申请日：2001-08-09

申请人： Antonius R. Burgers

发明人： Antonius R. Burgers

IPC分类号： H01L310224

CPC分类号： H01L31/022433 ,  Y02E10/50

摘要： Method for applying a metallization in accordance with a pattern of a system of mutually connected electrical conductors for transporting electrical charge carriers on at least one of the outer surfaces of a photovoltaic element, wherein the conductors display a determined series resistance and cover a part of the at least one surface in accordance a determined degree of covering, which method comprises the steps of (i) providing said photovoltaic element, at least one of the outer surfaces of which is adapted for applying of a metallization thereto, and (ii) applying a metallization in accordance with a determined pattern on the relevant surface, wherein the metallization, is applied in the second step (ii) in accordance with an optimized pattern, the geometry of which is defined such that the electrical power of this element is maximal as a function of this geometry, and photovoltaic element provided with a metallization applied according to this method.

摘要翻译： 根据用于在光伏元件的至少一个外表面上传送电荷载体的相互连接的电导体的系统的图案应用金属化的方法，其中所述导体显示确定的串联电阻并覆盖 至少一个表面，根据确定的覆盖程度，该方法包括以下步骤：（i）提供所述光电元件，其外表面中的至少一个适于向其施加金属化，以及（ii） 根据相关表面上的确定的图案进行金属化，其中金属化根据优化图案应用于第二步骤（ii）中，其几何形状被定义为使得该元件的电功率最大化为 该几何形状的功能以及根据该方法施加的金属化的光电元件。

公开(公告)号：US06384317B1

公开(公告)日：2002-05-07

申请号：US09445099

申请日：2000-04-03

申请人： Emmanuel Van Kerschaver ,  Jozef Szlufcik ,  Roland Einhaus ,  Johan Nijs

发明人： Emmanuel Van Kerschaver ,  Jozef Szlufcik ,  Roland Einhaus ,  Johan Nijs

IPC分类号： H01L310224

CPC分类号： H01L31/1804 ,  H01L31/02245 ,  H01L31/03529 ,  Y02E10/547 ,  Y02P70/521

摘要： The solar cell in the semiconductor substrate includes at least a radiation receiving front surface and a second surface. The substrate includes a first region of one type of conductivity and a second region of the opposite conductivity type with at least a first part located adjacent to the front surface and a second part located adjacent to the second surface. The front surface includes conductive contacts to the second region and the second surface has separated contacts to the first region and to the second region. The contacts to the second region at the second surface are connected to the contacts at the front surface through a limited number of vias.

摘要翻译： 半导体衬底中的太阳能电池至少包括辐射接收前表面和第二表面。 衬底包括一种导电类型的第一区域和相反导电类型的第二区域，其中至少第一部分位于邻近前表面的第一部分和与第二表面相邻的第二部分。 前表面包括到第二区域的导电触点，并且第二表面具有到第一区域和第二区域的分离的触点。 在第二表面处的第二区域的触点通过有限数量的通孔连接到前表面上的触点。