公开(公告)号：US20120062074A1

公开(公告)日：2012-03-15

申请号：US13227349

申请日：2011-09-07

申请人： Hideki Hahiro

发明人： Hideki Hahiro

IPC分类号： H01L41/083 ,  H01L41/047

CPC分类号： H01L41/0478 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0533 ,  H01L41/0805 ,  H01L41/332

摘要： A piezoelectric element includes a first electrode, a first multilayer composite disposed on the first electrode, a second multilayer composite disposed on the first electrode with a distance from the first multilayer composite, and a covering layer covering the side surfaces of the first and second multilayer composites and the surface of the first electrode between the first multilayer composite and the second multilayer composite. The first and second multilayer composites each include a piezoelectric layer and a second electrode over the piezoelectric layer. The first electrode contains a metal that can react with chlorine, and has at least one of a bump and a dip at the surface thereof between the first multilayer composite and the second multilayer composite.

摘要翻译： 一种压电元件，包括第一电极，设置在第一电极上的第一多层复合物，设置在第一电极上与第一多层复合材料相距一定距离的第二多层复合物，以及覆盖第一和第二多层复合物的侧表面的覆盖层 复合材料和第一多层复合材料与第二多层复合材料之间的第一电极表面。 第一和第二多层复合材料各自包括压电层和压电层上的第二电极。 第一电极含有可与氯反应的金属，并且在第一多层复合材料和第二多层复合材料之间的表面具有凸起和浸渍中的至少一种。

公开(公告)号：US20120056508A1

公开(公告)日：2012-03-08

申请号：US13137689

申请日：2011-09-02

申请人： Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

发明人： Fumimasa Horikiri ,  Kenji Shibata ,  Kazufumi Suenaga ,  Kazutoshi Watanabe ,  Akira Nomoto

IPC分类号： H01L41/047 ,  H01L41/22 ,  B32B3/00 ,  H01L41/113 ,  H01L41/09

CPC分类号： H01L41/0805 ,  H01L41/1873 ,  H01L41/314 ,  H01L41/316 ,  H01L41/318 ,  H01L41/332 ,  Y10T428/24479

摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).

摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻 发射离子等离子体中Na的发射峰强度为压电薄膜。 压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。

公开(公告)号：US20110273517A1

公开(公告)日：2011-11-10

申请号：US13100932

申请日：2011-05-04

申请人： Hiromu MIYAZAWA

发明人： Hiromu MIYAZAWA

IPC分类号： B41J2/045 ,  H01L41/18

CPC分类号： B41J2/14233 ,  B41J2/055 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1878 ,  H01L41/318

摘要： A piezoelectric element includes electrodes and a piezoelectric layer provided between the electrodes. The piezoelectric layer is made of a complex oxide which contains bismuth, iron, and chromium. The piezoelectric layer contains 0.125 to 0.875 mole of chromium per mole of the combination of iron and chromium.

摘要翻译： 压电元件包括​​电极和设置在电极之间的压电层。 压电层由含有铋，铁和铬的复合氧化物制成。 压电层每摩尔铁和铬的组合含有0.125至0.875摩尔的铬。

公开(公告)号：US20110216131A1

公开(公告)日：2011-09-08

申请号：US13038320

申请日：2011-03-01

申请人： Yasuaki Hamada

发明人： Yasuaki Hamada

IPC分类号： B41J2/045 ,  H01L41/18

CPC分类号： B41J2/045 ,  B41J2/14233 ,  H01L41/0805 ,  H01L41/1878 ,  H01L41/318

摘要： There are provided a piezoelectric element comprising a first electrode, a piezoelectric layer and a second electrode, the piezoelectric layer is made of a piezoelectric material that contains a bismuth ferrite and silicon dioxide.

摘要翻译： 提供了包括第一电极，压电层和第二电极的压电元件，压电层由含有铋铁氧体和二氧化硅的压电材料制成。

公开(公告)号：US20110215679A1

公开(公告)日：2011-09-08

申请号：US13038786

申请日：2011-03-02

申请人： Takayuki NAONO

发明人： Takayuki NAONO

IPC分类号： H01L41/04 ,  H01L41/08 ,  H01L41/18 ,  B32B5/00 ,  B05D5/12 ,  C23C14/48 ,  C23C14/34

CPC分类号： B41J2/14233 ,  B41J2/1612 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric film is formed on a surface of a substrate by a vapor deposition process without generating grain boundaries which are substantially parallel to the surface of the substrate and are caused by lamination. A normal of a (100) plane of each of crystals constituting the piezoelectric film is inclined from a normal of the surface of the substrate by an angle of not smaller than 6° and not larger than 36°.

摘要翻译： 通过气相沉积法在基板的表面上形成压电膜，而不产生基本上平行于基板的表面并且由层压引起的晶界。 构成压电膜的各晶体的（100）面的法线从基板表面的法线倾斜不小于6°且不大于36°的角度。

公开(公告)号：US20110205311A1

公开(公告)日：2011-08-25

申请号：US13097941

申请日：2011-04-29

申请人： Xin-Shan LI

发明人： Xin-Shan LI

IPC分类号： B41J2/045 ,  H01L41/047

CPC分类号： B41J2/14233 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2002/14491 ,  B41J2202/11 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876

摘要： An actuator device includes a piezoelectric element including a lower electrode, a piezoelectric layer, and an upper electrode that are displaceably provided in sequence on a substrate. The lower electrode includes a flat center portion and an inclined end portion that descends toward the substrate. The piezoelectric layer is disposed above the lower electrode and the substrate, and includes a first, second, and third piezoelectric layer portion constituted by a plurality of columnar crystals. The columnar crystals of the first and second piezoelectric layer portions are orthogonal to the flat portion of the lower electrode and surface of the substrate, while the columnar crystals of the third piezoelectric layer portion extend orthogonally from a surface of the inclined portion and bend to be orthogonal to the surface of the upper electrode, giving the grains of the columnar crystals of the third piezoelectric layer portion larger widths and increased stress resistance.

摘要翻译： 致动器装置包括压电元件，该压电元件包括​​按顺序设置在基板上的下电极，压电层和上电极。 下部电极包括平坦的中心部分和朝向衬底下降的倾斜端部。 压电层设置在下电极和基板的上方，并且包括由多个柱状晶体构成的第一，第二和第三压电体层部。 第一和第二压电层部分的柱状晶体与下电极的平坦部分和基板的表面正交，而第三压电层部分的柱状晶体从倾斜部分的表面垂直延伸并弯曲成 与上电极的表面正交，使第三压电体部分的柱状晶体的晶粒宽度较大，并且耐应力增加。

公开(公告)号：US20110192016A1

公开(公告)日：2011-08-11

申请号：US12925047

申请日：2010-10-13

申请人： Jin Ho Kang ,  Cheol Park ,  Joycelyn S. Harrison ,  Michael W. Smith ,  Sharon E. Lowther ,  Jae-Woo Kim ,  Godfrey Sauti

发明人： Jin Ho Kang ,  Cheol Park ,  Joycelyn S. Harrison ,  Michael W. Smith ,  Sharon E. Lowther ,  Jae-Woo Kim ,  Godfrey Sauti

IPC分类号： H05K13/00 ,  H01L41/26 ,  H01L41/24 ,  B82Y99/00 ,  B82Y30/00

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  G01R29/14 ,  H01L41/00 ,  H01L41/0805 ,  H01L41/082 ,  H01L41/293 ,  H01L41/37 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

摘要： Electroactive actuation characteristics of novel BNNT based materials are described. Several series of BNNT based electroactive materials including BNNT/polyimide composites and BNNT films are prepared. The BNNT based electroactive materials show high piezoelectric coefficients, d13, about 14.80 pm/V as well as high electrostrictive coefficients, M13, 3.21×10−16 pm2N2. The BNNT based electroactive materials will be used for novel electromechanical energy conversion devices.

摘要翻译： 描述了新型BNNT基材料的电活性致动特性。 制备了几种BNNT基电活性材料系列，包括BNNT /聚酰亚胺复合材料和BNNT薄膜。 基于BNNT的电活性材料显示出高压电系数d13，约14.80μm/ V以及高电致伸缩系数M13,3.21×10-16pm2N2。 基于BNNT的电活性材料将用于新型机电能量转换装置。

公开(公告)号：US20110079883A1

公开(公告)日：2011-04-07

申请号：US12889684

申请日：2010-09-24

申请人： MIKIO SHIMADA ,  TOSHIAKI AIBA ,  TOSHIHIRO IFUKU ,  JUMPEI HAYASHI ,  MAKOTO KUBOTA ,  HIROSHI FUNAKUBO ,  YUICHI SHIMAKAWA ,  MASAKI AZUMA ,  YOSHITAKA NAKAMURA

发明人： MIKIO SHIMADA ,  TOSHIAKI AIBA ,  TOSHIHIRO IFUKU ,  JUMPEI HAYASHI ,  MAKOTO KUBOTA ,  HIROSHI FUNAKUBO ,  YUICHI SHIMAKAWA ,  MASAKI AZUMA ,  YOSHITAKA NAKAMURA

IPC分类号： H01L49/02

CPC分类号： H01L41/1878 ,  H01L28/55 ,  H01L41/0805 ,  H01L41/316

摘要： Provided is a ferroelectric thin film formed on a substrate and having an amount of remanent polarization increased in its entirety. The ferroelectric thin film contains a perovskite-type metal oxide formed on a substrate, the ferroelectric thin film containing a column group formed of multiple columns each formed of a spinel-type metal oxide, in which the column group is in a state of standing in a direction perpendicular to a surface of the substrate, or in a state of slanting at a slant angle in a range of −10° or more to +10° or less with respect to the perpendicular direction.

摘要翻译： 提供了形成在基板上并且具有全部剩余极化量增加的铁电薄膜。 铁电薄膜含有在基板上形成的钙钛矿型金属氧化物，所述强电介质薄膜含有由尖晶石型金属氧化物形成的多列的柱状基团，所述柱状基团处于静止状态 垂直于基板的表面的方向，或者相对于垂直方向以-10°以上至+ 10°以下的范围倾斜的倾斜状态。

公开(公告)号：US20110041304A1

公开(公告)日：2011-02-24

申请号：US12938695

申请日：2010-11-03

申请人： Takayuki NAONO ,  Takami Arakawa ,  Takamichi Fujii

发明人： Takayuki NAONO ,  Takami Arakawa ,  Takamichi Fujii

IPC分类号： H01L41/22

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1646 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/42

摘要： The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0

摘要翻译： 压电装置包括根据施加的电压的变化而膨胀或收缩的压电膜，设置在膜的第一面上的第一电极和设置在膜的第二面上的第二电极。 该膜通过气相沉积形成在第二电极上，主要由Pb x B y O z组成。 位置B处的元素是选自Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd中的至少一种元素， Fe和Ni，0

公开(公告)号：US20110037812A1

公开(公告)日：2011-02-17

申请号：US12855627

申请日：2010-08-12

申请人： Takayuki Naono ,  Takamichi Fujii ,  Takami Arakawa

发明人： Takayuki Naono ,  Takamichi Fujii ,  Takami Arakawa

IPC分类号： B41J2/045 ,  H01L41/04

CPC分类号： B41J2/14274 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： The columnar structure film is formed on a surface of a substrate by vapor phase epitaxy, and is constituted of a plurality of columnar bodies extending in directions non-parallel to the surface of the substrate. In the columnar structure film, a relationship GSmax>2.0 GSmin is satisfied, where GSmax and GSmin are respectively a maximum value and a minimum value of average diameters of the columnar bodies taken in planes perpendicular to a thickness direction of the columnar structure film.

摘要翻译： 柱状结构膜通过气相外延形成在基板的表面上，并且由在与基板的表面不平行的方向延伸的多个柱状体构成。 在柱状结构膜中，满足关系GSmax> 2.0GSmin，其中GSmax和GSmin分别是垂直于柱状结构膜的厚度方向的平面中所取的柱状体的平均直径的最大值和最小值。