SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM

    公开(公告)号:US20230409202A1

    公开(公告)日:2023-12-21

    申请号:US18176364

    申请日:2023-02-28

    发明人: Goichi OOTOMO

    IPC分类号: G06F3/06

    摘要: A semiconductor storage device includes a plurality of semiconductor memory chips and a bridge chip. The bridge chip includes a first interface connectable to an external memory controller that is external to the semiconductor storage device, a plurality of second interfaces connected to the semiconductor memory chips, and a controller. The controller is configured to, upon receiving, by the first interface, a first command sequence that includes a data transfer command to perform data transfer with one of the semiconductor chips and size information indicating a size of data to be transferred, start an operation to perform the data transfer, and end the operation, upon an amount of data that has been received by the first interface during the data transfer reaching the size indicated by the size information.

    MEMORY APPARATUS EMBEDDED WITH COMPUTING FUNCTION AND OPERATION METHOD THEREOF

    公开(公告)号:US20230400997A1

    公开(公告)日:2023-12-14

    申请号:US18455633

    申请日:2023-08-25

    IPC分类号: G06F3/06 G06F13/16

    摘要: A memory apparatus embedded with a computing function and an operation method thereof are provided. The memory apparatus includes a memory array, a plurality of data flow controllers, a plurality of computation circuits, a data bus, and a control logic circuit. The memory array includes a plurality of block groups having a plurality of memory blocks. Each of the data flow controllers selects a transmission path of data of each memory block according to a corresponding one of the data flow control signals. In a computation mode, the computation circuit computes first data from the corresponding memory block. In a normal mode, second data is transmitted between the data bus and the corresponding memory block. The data flow controller transmits the first data from the corresponding memory block to the computation circuit according to the data flow control signal provided by the control logic circuit to compute the first data.

    Zone namespace
    83.
    发明授权

    公开(公告)号:US11842053B2

    公开(公告)日:2023-12-12

    申请号:US18084323

    申请日:2022-12-19

    发明人: Ronald Karr

    IPC分类号: G06F12/00 G06F3/06

    摘要: A list of a available zones across respective SSD storage portions of a plurality of zoned storage devices of a storage system is maintained. Data is received from multiple sources, wherein the data is associated with processing a dataset, the dataset including multiple volumes and associated metadata. Shards of the data are determined such that each shard is capable of being written in parallel with the remaining shards. The shards are mapped to a subset of the available zones, respectively. The shards are written to the subset of the available zones in parallel.

    EMBEDDED STORAGE DEVICE, HOST SYSTEM HAVING THE SAME, AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20230376247A1

    公开(公告)日:2023-11-23

    申请号:US18048696

    申请日:2022-10-21

    IPC分类号: G06F3/06

    摘要: A host system includes a volatile memory device configured to store first temporary data, an embedded storage device configured to store second temporary data, and a host device configured to determine whether to transmit new temporary data to the nonvolatile memory device for storage therein as the first temporary data or to the embedded storage device for storage therein as the second temporary data in response to a detection signal of an event associated with the new temporary data. The embedded storage device may include at least one nonvolatile memory device having a buffer area, in which the second temporary data is stored, and a user area, and a controller configured to control the at least one nonvolatile memory device such that the second temporary data in the buffer area is copied to the user area in response to a flush request of the host device.

    MEMORY DEVICE, MEMORY SYSTEM AND METHOD FOR OPERATING MEMORY SYSTEM

    公开(公告)号:US20230376207A1

    公开(公告)日:2023-11-23

    申请号:US18048081

    申请日:2022-10-20

    申请人: SK hynix Inc.

    发明人: Sung Lae OH

    IPC分类号: G06F3/06

    摘要: A memory device includes a first wafer including a first memory block and a second memory block; and a second wafer arranged in a vertical direction with respect to the first wafer, including a third memory block with a stack number of word lines and a number of strings, each respectively larger than a stack number of word lines and a number of strings of the first memory block and each respectively larger than a stack number of word lines and a number of strings of the second memory block, and sharing, by the third memory block, a plurality of word line drivers with the first memory block and the second memory block.

    Increasing resiliency of input-output operations to network interruptions

    公开(公告)号:US11816340B2

    公开(公告)日:2023-11-14

    申请号:US17681999

    申请日:2022-02-28

    发明人: Tal Abir Oshri Adler

    IPC分类号: G06F12/00 G06F3/06

    摘要: Techniques are provided for increasing resiliency of IO operations to network interruptions. One method comprises, in response to a failure of a given IO operation on a first path between at least one initiator of a host device and at least one storage target of a storage volume of a distributed storage system, resending the given IO operation on a second path between the at least one initiator and the at least one storage target; and, in response to a completion of the given IO operation on a given one of the first path and the second path, initiating a remapping of the storage volume. The remapping of the storage volume may comprise unmapping the storage volume and mapping the storage volume. One or more IO operations having an older generation number than the generation number of the storage volume may be discarded.